ZC744 Search Results

106 25v

Abstract: ZC744 diode 3106 R 2.8 diode DSA003761 c30 diode
Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ZC744 ISSUE 2 – SEPTEMBER 94 DIODE PIN CONNECTION 1 1 CATHODE 2 2 ANODE E-Line TO92 Compatible ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL MIN TYP MAX UNIT Reverse Breakdown Voltage VR Reverse Voltage Leakage

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance

ZC700

Abstract: ZC702 ZC752 ZC701 ZC703 ZC714 ZC740 ZC741 ZC742 ZC743
Contextual Info: VARIABLE CAPACITANCE TUNER DIODES TABLE 5 - SILICON EPITAXIAL PLANAR DIFFUSED DIODES Designed for VHF and UHF electronic tuning applications T amb = 25 °C Parameter Reverse Breakdown Voltage Reverse Voltage Leakage V R = 25V Case Capacitance Tem perature coefficient of capacitance (V R = 3V)

2N3819 spice model

Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
Contextual Info: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

ZC748

Abstract: ZC111 zc15 ZC151 ZC752 ZC700 ZC701 ZC702 ZC703 ZC714
Contextual Info: VARIABLE CAPACITANCE TUNER DIODES SILICON EPITAXIAL PLANAR DIFFUSED DIODES Designed fo r V H F and UHF electronic tuning applications Tamb — 25 C Parameter M in. Symbol Typ. Max. U nit — 30.0 V Reverse Breakdown Voltage Vr — Reverse Voltage Leakage V R = 25V

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

ZC706

Abstract: ZC701
Contextual Info: PLESSEY TS SENICOND/DISCRETE 7220533 PLESSEY ì lF | 7 S 5 D 5 3 3 SEMICOND/D I S C R E T E O D D 4 c1fl3 95D 0 498 3 D TABLE 3 : VARIABLE CAPACITANCE TUNER DIODES ! ABRUPT TYPE) j T 'O l'( *T j ZC700, ZC740 Series i ! Designed for V H F and UHF electronic tuning applications, and other applications such as automatic

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION w2 ANO DE CATHODE ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL Reverse Breakdow n Voltage Vr MIN TYP MAX 30 UNIT V lf^=10|xA HA V r=25V Reverse Voltage Leakage

BO540W

Abstract: tektronix 454a CA3096 Application Notes tektronix 454 Digital Oscilloscope Variable Gain Amplifier SR560 diode POS-1400 Tektronix Type 1A7A an8515 construction of varactor diode
Contextual Info: Application Note 85 August 2000 Low Noise Varactor Biasing with Switching Regulators Vanquishing Villainous Vitiators Vis-à-Vis Vital Varactors Jim Williams and David Beebe INTRODUCTION “hyperabrupt” devices. Response modification is possible, with compromises in performance, particularly with regard

K 250 diode

Abstract: k1a1 diode 816
Contextual Info: E-LINE DIODES TABLE 12: PRECISION MICROPOWER VOLTAGE R EFERENCES PART NO. Nominal Voltage V# PIN OUT Guaranteed Knee Current UA Slope Resistance n Temperature Coefficient PPM/°C 1 2 3 50 50 20 50 50 50 1 2 2 2 2 2 50 50 50 90 90 90 n/c n/c n/c n/c n/c n/c