Z4 DIODE Search Results

ECG diodes

Abstract: ECG618
Contextual Info: Varistors Temperature Com pensating Diodes Forward Voltage V f Max. Volts 10 0.63 at 3 mA 0.69 at 3 mA 2 Z4 Silicon 20 0.56 at 1.5 mA 0.61 at 1.5 mA 1.5 Z4 Silicon 100 1.26 at 3 mA 1.36 at 3 mA 4.6 22 Description ECG600 Silicon ECG601 ECG605A Varistors ECG606

ECG605A

Abstract: ECG618 HM200 ECG diodes ECG611 MA27A Philips ECG ECG601 ECG606 ECG607
Contextual Info: PHILIPS E C Varistors INC G 54E ]> • Forward Current IF m A Description M in. Volts M ax. V olts Fig. Z2 C hange Per °C in m V Silicon 10 0.63 at 3 mA 0.69 at 3 mA 2 Z4 ECG601 Silicon 20 0.56 at 1.5 m A 0.61 at 1.5 mA 1.5 Z4 ECG 605A Silicon 100 1.26 at

in4728

Abstract: in4764 bs9305 IN371 Z0B0.7 IN4628 IN4400 Z0B11 Z0B12 Z0B15
Contextual Info: Voltage Regulator Diodes Z4 Series ZO Series Electrical characteristics at 25°C Type Z0B0.7 Z0B1.4 Z0B2.0 Z0B2.2 Z0B2.4 Z0B2.7 Z0B3.0 Z0B3.3 Z0B3.6 Z0B3.9 Z0B4.3 Z0B4.7 Z0B5.1 Z0B5.6 Z0B6.2 Z0B6.8 Z0B7.5 Z0B8.2 Z0B9.1 Z0B10 Z0B11 Z0B12 Z0B13 Z0B15 Z0B16 Z0B18

in4728

Abstract: zener diode Z483 IN4158 zener diode Z487 104 Z4 Z4 13 Z4*13 z4810 Z4818 D029
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator Diodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t- 1W

in4728

Abstract: IN4158 in4764 IN4400 IN4193 104 Z4 z0b07 IN4358 Z0B11 Z0B12
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator D iodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t-

z0b07

Abstract: Z4618 z4843
Contextual Info: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS

KM11

Abstract: KM14 KM17 KM33 halbleiterbauelemente DD 85 N 1600 aa1900
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 85 N M5x11 Z4-1 15,5 20 20 80 92 AK K A 9. Sept. 1998 Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD 85 N 08.16 N Elektrische Eigenschaften / Electrical properties

zener diode Z483

Abstract: IN3016 in4728 Z4818 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16
Contextual Info: Z4 Series ZO Series Electrical characteristics at 25°C + 5% Voltage Toi Type Z4B3.0 Z4B3.3 Z4B3.6 Z4B3.9 Z4B4.3 Z4B4.7 Z4B5.1 Z4B5.6 Z4B6.2 Z4B6.8 Z4B7.5 Z4B8.2 Z4B9.1 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16 Z4B18 Z4B20 Z4B22 Z4B24 Z4B27 Z4B30 Z4B33 Z4B36 Z4B39

UTI03

Abstract: P151 T460 YG805C04 IlI15
Contextual Info: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications

Contextual Info: SKKD 260 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules KLMN KLLN K ¥TT S?TT S^TT ASTT K XTT SATT S>TT ATTT OHDK Q A>T D U*2 < SXTY Z4 Q X@ [EW M]]J A>TFTX M]]J A>TFSA M]]J A>TFS> M]]J A>TFAT$R A?TT AATT M]]J A>TFAA$R Symbol Conditions

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 101 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 101 F, TD 101 F, DT 101 F

EUPEC TT 106 N 12

Abstract: eupec dd 115 EUPEC tt 95 n 14 EUPEC dd 106 N 12 eupec dd 76 n 12 l D-59581 uas 111
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 111 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 111 F, TD 111 F, DT 111 F

T102

Abstract: dvr circuit diagram
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 81 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 81 F, TD 81 F, DT 81 F

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 71 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 71 F, TD 71 F, DT 71 F

Vrrm

Abstract: EUPEC TT 60 f QR200 ws dvd 290 diod 300 4 f6 EUPEC tt 250 n
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 101 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 101 F, TD 101 F, DT 101 F

T102

Abstract: M6X15 50HZ generator sinus
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 81 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 81 F, TD 81 F, DT 81 F

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 71 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 71 F, TD 71 F, DT 71 F

Z4 diode

Contextual Info: SKMD 202E, SKND 202E THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Ultrafast Epitaxial Diode Modules SKND 202E SKMD 202E /R>@ /RR@ / K<< / K<< $SR@> T ;KJ L O, U5,N, 4('N* F&0 3&8 58N&N% &.*0()5&8Q $SL/ T K<K L O%58G VW<E J< XDY Z3 T W[ ¥MQ >?@A K<KH<K >?CA K<KH<K

Z6 DIODE

Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

ECG584 schottky

Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Contextual Info: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114

diode ZENER Z4

Abstract: zener diode z4 Z4 SOT23 Z4 diode marking Z4 marking code z4 z4 marking sot 23 marking code Z4 593 MARKING CODE SOT23
Contextual Info: SDZ6V2 ZENER DIODE Small Signal Zener Diode General Description These diodes small signal Zener diodes, fabricated in planar technology. Miniature surface mount package is excellent for hand-held and portable applications where is space is limited. Features and Benefits

diode ZENER Z4

Abstract: zener diode z4 marking Z4 Marking Code Z4 Z4 diode SDZ6V2D zener diode marking code 15 zener diode color code z4 marking marking Z4 diode
Contextual Info: SDZ6V2D ZENER DIODE Small Signal Zener Diode General Description These diodes small signal Zener diodes, fabricated in planar technology. Miniature surface mount package is excellent for hand-held and portable applications where is space is limited. Features and Benefits

ecg rectifier diode

Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Contextual Info: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

SZWW4A0A

Abstract: X4 DIODE SMD
Contextual Info: Z-Power LED X10490 Technical Data Sheet SZWW4A0A Specification Features • Super high Flux output and high Luminance • Designed for high current operation • SMT solderable • Lead Free product • RoHS compliant Description The Z-Power series is designed for high current operation and