Z3M IC Search Results

Contextual Info: FI S G -Z3M 53.7. 0 0 5 7 ^ 55 7 • T MK48H98/99 N _ -20/30/40 SCS-THOMSON u l e m m o S - THOMSON s J0E_P 73,728-BIT 8 K X 8/9 CMOS PARITY SRAM ADVANCE DATA PIN CONNECTION BYTEWYDE 8K x 9 CM O S STATIC RAM CONFIGURABLE: x9/ o r x8 plu s PARITY 20,30,40ns DATA ACCESS TIMES

Contextual Info: 1. Mechanical Dimensions: 2. Schem atic: A 0.4-65 2 OXFMRS XF6599 -0 1 Secondary Primary 5 O- YYWW -o 6 3 O4 O- 3. E lectrica l Sp ecification s: OCL: P 2— 5 1.3mH Min. 10KHz 1.0V, Ls 1X7 o o û S < \° ° ZU (BOTTOM VIEW) DCR: P ( 2 - 4 ) 0 .9 6 - 1 . 5 5

transistor z3m

Contextual Info: Panasonic Mobile Communication AN6400FA Pager Direct Conversion FSK Demodulator Base-Band 1C • Overview T h e A N 6 4 0 0 F A is a base-band 1C supporting direct conversion FSK demodulation for pagers. ■ Features • Low current consumption : Vcci current consumption

"Z3M"

Abstract: Z3M Y Transistor z3p W2P 31 package W6K space shuttle transistor w2P transistor w4p Transistor y4n transistor z3m
Contextual Info: HT1132A SPACE WAR LCD Game Features • • • 1/3 bias, 1/4 duty, 32 x 4 pattern, 3.0V LCD driver Built-in sound generator RC oscillator General Description laser beams. In mode 2, enemy’s space shuttle can quickly shift from up to down or from left to

D425

Contextual Info: M-985-01 Precise Call Progress and Special Information Tone Detector • Precise detection of call progress tones • Linear analog input VD0 CZ StQtN CZ NC CZ PO c z cz X358 c z XOtfT c z »N c z NC c z Vss MODE d • Digital (CMOS compatible), tri-state outputs

transistor z3m

Abstract: Z3M IC z3m Transistor Z3M Y
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

Contextual Info: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max

Contextual Info: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions ?.1C3 '7 69CH G.H 69CKK G.H jCA=*BA310 ;CB

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT «P D 421165 1 M-BIT DYNAMIC RAM 64K-W ORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/W RITE MODE d e sc r ip tio n The JUPD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.