FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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Z3B33BF
Abstract: Z3B36BF Z3B39BF Z3B43BF Z3B47BF Z3B51BF
Contextual Info: ITT Semiconductors Zeiver Diodes Zener Diodes— 1.5 Watt Z3B series Metal Package- W ire Ended 10%Toleran ce (Z 3 B . . . B F Range) M A X IM U M R A T IN G S V F (m ax)=1.2 V (at I f =1-3A) l F (m ax)=1.3A T hese devices have an all-welded en capsulation with glass-m etal herm etic seals.
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z3b33bf14627xz3b36bf14628h+6z3b39bf14829fz3b43bf14630rz3b47bfz3b51bf
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Z3B240CF
Abstract: ITT Semiconductors Z3B82 Z3B43CF 5115A 5958X Z3B33BF Z3B36BF Z3B39BF Z3B43BF
Contextual Info: Semiconductors ITT Zeiver Diodes Zener Diodes—1.5 W att Z3B series Metal Package- Wire Ended 10% T olerance (Z 3B . . . BF Range) MAXIMUM RATINGS V F(m ax)=1.2 V (at If =1-3A) lF(max)=1.3A These devices have an all-welded encapsulation with glass-metal hermetic seals.
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z3b33bf14627xz3b36bf14628h+12z3b39bf14829fz3b43bf14630rz3b47bfz3b51bfz3b240cfitt semiconductorsz3b82z3b43cf5115a5958x
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