Z3 TECHNOLOGY Search Results

Z3 DIODE

Abstract: 46/SMC 5/L4F1 DIODE 17 SMC zener diode z3 233 smc diode Z3SMC33 46/SMC 5/46/SMC 5/L4F1 DIODE
Contextual Info: Z3 SMC 1 … Z3 SMC 200 3 W Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Maximum power dissipation Maximale Verlustleistung 3W Nominal Z-voltage – Nominale Z-Spannung 1…200 V

V23806-S84-Z3

Abstract: V23806-S84-Z4 V23809-E11-C10
Contextual Info: Fiber Optics Testboard for ATM, ESCON, Fibre Channel and Gigabit Ethernet 1x9 Transceivers 5 V V23806-S84-Z3 3.3 V V23806-S84-Z4 SMA-connector female Infineon Fiber Optics V23806-S84-Z3/Z4 APPLICATION BOARD ATM/ESCON/FC/GBd Ethernet 155-1250 MBd 3.3 V/5 V - Version

HMS3224M3

Abstract: HMS3224Z3
Contextual Info: HANBit HMS3224M3/Z3 HAN SRAM MODULE 768KBit 32K x 24-Bit BIT Part No. HMS3224M3, HMS3224Z3 GENERAL DESCRIPTION The HMS3224M3/Z3 is a high-speed static random access memory (SRAM) module containing 32,768 words organized in a x24-bit configuration. The module consists of three 32K x 8 SRAMs mounted on a 56-pin, singlesided, FR4-printed circuit board.

COUPLED RECEIVER

Abstract: label infineon Testboard for 1x9 Transceiver V23806-S84-Z3 V23806-S84-Z4 V23809-E11-C10 ESCON INFINEON DETAIL
Contextual Info: V23806-S84-Z3 3.3 V V23806-S84-Z4 5V Testboard for ATM, ESCON, Fibre Channel and Gigabit Ethernet 1x9 Transceivers FEATURES • Allows for separate powering of receiver and transmitter section • Power supply lines filtered externally to module under test

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ31060-HF Reverse Voltage: 60 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 - Lead less chip form, no lead damage. Top View - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

TO-277

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200H-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free TO-277 Z3 Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

CDBZ310200-HF

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 -Lead less chip form, no lead damage. Top View -Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

CDBZ31060-HF

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ31060-HF Reverse Voltage: 60 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 - Lead less chip form, no lead damage. Top View - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

CDBZ310200H-HF

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200H-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free TO-277 Z3 Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ320200-HF Reverse Voltage: 200 Volts Forward Current: 20 Amp RoHS Device Halogen free TO-277 Z3 Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 -Lead less chip form, no lead damage. Top View -Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ320200-HF Reverse Voltage: 200 Volts Forward Current: 20 Amp RoHS Device Halogen free TO-277 Z3 Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ31060H-HF Reverse Voltage: 60 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 - Lead less chip form, no lead damage. Top View - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

CDBZ31060H-HF

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ31060H-HF Reverse Voltage: 60 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 - Lead less chip form, no lead damage. Top View - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200H-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free TO-277 Z3 Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: SMD Schottky Barrier Rectifiers CDBZ310200-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free Features TO-277 Z3 -Lead less chip form, no lead damage. Top View -Low power loss, High efficiency. Bottom View 0.132(3.35) 0.120(3.05)

Contextual Info: GOLDSTAR TECHNOLOGY I N C / I GST 4D2A757 GGG3Mt11 1 47E D T-V6-Z3 -/5' GoldStar GMM781000S-60/70/80/10 1,048,576 WORDS X 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of

S4113

Contextual Info: 14E D INTEGRATED DEVICE • 4025771 0003377 2 ■ CMOS SYNCHRONOUS STATIC RAM W / TRANSPARENT OUTPUTS AND OE 64K 16Kx 4-BIT ADVANCE INFORMATION IDT 61595S IDT 61595L T-V4-Z3 -ID FEATURES: DESCRIPTION: • 16K x 4-Bit Organization • High-speed Cycle Time

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

cdp1822cd

Abstract: CDP-1802 34604 DG55C
Contextual Info: G E SOLID STATE 17E D • 3â7SGai DG55CH3 ■ High-Reliability CM O S LSI Devices CDP1822C/3 'T-Mk-Z3>-Q2> High-Reliability CMOS 256-Word by 4-Bit LSI Static Random-Access Memory For Applications in Aerospace, Military, and Critical Industrial Equipment Features:

Contextual Info: TOSHIBA LOGIC/MEMORY IME D | 10^7240 QQlöSia 2 | - TC74HC4020P/F T -< 4 S -Z3 > -Ì7 TC 74 H C 40 20 P/F 1 4 - S T A G E BIN AR Y COUNTER The TC74HC4020 is a high speed CMOS 14-STAGE BINARY COUNTER/DIVIDER fabricated with silicon gate C2M0S technology.

ICE 47E

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ • GST T-V6-Z3-/5 GM71C1000/L 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance

B2020

Abstract: B2021 t523
Contextual Info: BIPOLAR INTEGRATED 1451454 □□□□tab T • BIT T'S~3~Z3-eÇ- 47E D Bipolar integrated Technology Inc. HIPPI Interface Chip Set 32-Bit B2020 - HIPPI Source Interface Chip B2021 - HIPPI Destination Interface Chip The B2020 and B2021 are BIT’S implementation of the single chip Parallel HIPPI Source and Destination Interfaces.

Contextual Info: MICRON TECHNOLOGY INC b i l l 5 4e! 0QG1031 7 14E » . W^jjgg T-¿/6-Z3 -/ 7 256K X 36 DRAM DRAM MODULE FEATURES PIN ASSIGNMENT Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply