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    Z DIODE 14A Search Results

    Z DIODE 14A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    Z DIODE 14A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012F3C Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.


    Original     		kp-2012f3c2000pcsdsaa4437nov/28/2013 PDF

    Contextual Info: 1.6X0.8mm INFRARED EMITTING DIODE Part Number: KP-1608F3C Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.


    Original     		kp-1608f3c2000pcsdsab7146jan/17/2012 PDF

    Contextual Info: 20mm BIG LAMP Part Number: DLC/6SRD Super Bright Red Features Description z 12 pins. The Super Bright Red source color devices are made with z High luminous intensity. Gallium Aluminum Arsenide Red Light Emitting Diode. z Low power consumption. z Wide viewing angle.


    Original     		dsaa4650apr/06/2013 PDF

    Contextual Info: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.


    Original     		km2520surck01dsab6356feb/19/2013 PDF

    Contextual Info: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.


    Original     		km2520surck01dsab6356feb/19/2013 PDF

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SURCK Hyper Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Wide viewing angle.


    Original     		apt1608surck2000pcsdsad0926mar/16/2013 PDF

    z diode 14a

    Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216CGCK Green Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


    Original     		aptd3216cgck2000pcsacc73jan/13/2012+2dsaa9373z diode 14a PDF

    Contextual Info: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


    Original     		kpl-3015surck2000pcsdsaa8030feb/05/2013 PDF

    Contextual Info: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


    Original     		kpl-3015surck2000pcsdev15surckdsaa8030+1feb/05/2013 PDF

    Contextual Info: T-1 3/4 5mm SOLID STATE LAMP Part Number: L-7113SURDK Hyper Red Features Description z Low power consumption. The Hyper Red source color devices are made with Al- z Popular T-1 3/4 diameter package. GaInP on GaAs substrate Light Emitting Diode. z General purpose leads.


    Original     		l-7113surdkdsad39cdsad3993mar/30/2013 PDF

    Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SYCK Super Bright Yellow Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		aptd3216syck2000pcsjan/13/2012dsad1050 PDF

    Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpt-2012seck2000pcssi011dsaa4129+1nov/01/2011 PDF

    Contextual Info: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPBD-3224SURKCGKC Hyper Red Green Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode.


    Original     		kpbd-3224surkcgkc1500pcsdsad3553mar/28/2013 PDF

    Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SRCPRV Super Bright Red Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


    Original     		apt2012srcprv2000pcsdsab0830mar/16/2013 PDF

    Contextual Info: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPD-3224SECK Super Bright Orange Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpd-3224seck1500pcsdsab2513may/03/2012 PDF

    Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SRCPRV Super Bright Red Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


    Original     		aptd3216srcprv2000pcsdsab6348mar/18/2013 PDF

    Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kptd-3216seck2000pcs216seckdsaa5712+1apr/06/2013 PDF

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KP-1608SECK Super Bright Orange Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kp-1608seck2000pcsdsac1227jan/10/2012 PDF

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SRCPRV Super Bright Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


    Original     		apt1608srcprv2000pcsdsab3726mar/16/2013 PDF

    Contextual Info: T-1 3mm INFRARED EMITTING DIODE Part Number: L-7104F3C Features Description z Mechanically and spectrally matched to the phototran- F3 Made with Gallium Arsenide Infrared Emitting diodes. sistor. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).


    Original     		l-7104f3cdsab2442apr/13/2013 PDF

    Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-1606SECK Super Bright Orange Features Description z 1.6mmx0.6mm right angle SMT LED,1.2mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpa-1606seck2000pcsdsac2125may/12/2014 PDF

    Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3010SECK Super Bright Orange Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpa-3010seck2000pcsdsab7756nov/29/2011 PDF

    Contextual Info: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpa-3210seck2000pcsdsab7895oct/29/2011 PDF

    Contextual Info: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original     		kpa-3210seck2000pcsdsab7895oct/29/2011 PDF