DSAA5712 Search Results
DSAA5712 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP KPTD-3216SECK SUPER BRIGHT ORANGE Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. made with DH InGaAlP on GaAs substrate Light !WIDE VIEWING ANGLE. |
Original |
KPTD-3216SECK 2000PCS DSAA5712 DEC/11/2002 KPTD-3216 KPTD-3216SECK | |
KPTD-3216SECKContextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KPTD-3216SECK 2000PCS DSAA5712 JUL/05/2007 KPTD-3216SECK | |
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPTD-3216SECK 2000pcs JAN/08/2010 KPTD-3216SECK DSAA5712 | |
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPTD-3216SECK 2000pcs 216SECK DSAA5712 APR/06/2013 | |
KPTD-3216SECKContextual Info: 3.2x1.6mm SMD CHIP LED LAMP KPTD-3216SECK Features Description z3.2mmx1.6mm zLOW zWIDE The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. zPACKAGE zRoHS |
Original |
KPTD-3216SECK 2000PCS DSAA5712 MAR/22/2005 KPTD-3216SECK | |
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPTD-3216SECK 2000pcs T/22/2010 DSAA5712 OCT/22/2010 |