Z A SOT323 Search Results

Contextual Info: BAS70W/-04W/-05W/-06W VOLTAGE 70 V, 70 mA Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z SOT-323 Low Turn-on voltage Low Forward Voltage - 0.75V Max @ IF = 10 mA

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

BC817

Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

SPN1443

Abstract: SPN1443S32RG
Contextual Info: SPN1443 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1443 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP7401

Abstract: SPP7401S32RG
Contextual Info: SPP7401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP1433

Abstract: SPP1433S32RG SOT323 Marking 87 33YW
Contextual Info: SPP1433 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN1423

Abstract: SPN1423S32RG 23YW
Contextual Info: SPN1423 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

voltage regulators marking code

Abstract: SOT353 e3 SOT-353 e4 sot353 OUTPUT 3.3V PACKAGE SOT323 SP2526 SP2526AS32RG SP2526XS23RG SP2526XS35RG Z A SOT323
Contextual Info: SP2526 Low ESR Cap. Compatible Positive Voltage Regulators DESCRIPTION The SP2526 family is a positive voltage linear regulators, low power consumption, high voltage, manufactured using CMOS technology. The SP2526 family provides large currents with a low dropout

DAN217U

Abstract: Zowie Technology
Contextual Info: Zowie Technology Corporation Dual series switching diode Lead free product Halogen-free type 3 ANODE CATHODE 1 DAN217UGH 2 1 3 CATHODE/ANODE 2 SOT-323 FEATURES z Fast switching speed. z Small surface mounting type. z Two diode elements are connected in series.

Contextual Info: MA3408Y20000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3408Y2 is the highest performance trench N-CH MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA

Contextual Info: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor D e sig n e d for low noise, w ide dynam ic range front end am p lifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices

74V1T03

Abstract: 74V1T03CTR 74V1T03STR
Contextual Info: 74V1T03 SINGLE 2-INPUT OPEN DRAIN NAND GATE • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5.4ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS

BAV199W

Abstract: DS3046-2 marking is K52
Contextual Info: BAV199W DUAL SURFACE MOUNT LOW LEAKAGE DIODE Features • • • • • Mechanical Data • • Surface Mount Package Ideally Suited for Automated Insertion Suitable for ultra-low leakage current applications, including high-precision instrumentation and portable electronics

74LX1G03

Abstract: SOT23-5L 74LX1G03CTR 74LX1G03STR
Contextual Info: 74LX1G03 SINGLE 2-INPUT OPEN DRAIN NAND GATE • ■ ■ ■ ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns MAX. at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V

Contextual Info: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

APE9101

Abstract: h2 sot-23 5 pin DFN6 2x2 dfn6 APE9101A switch sc70 26 APE9101X 2x2 dfn hall sensor 6pin Z A SOT323
Contextual Info: Advanced Power Electronics Corp. APE9101/A MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH FEATURES DESCRIPTION APE9101/A is a three-terminal Hall Effect sensor device with a output driver, mainly designed for battery– operation, hand-held equipment such as Cellular and

DS31638

Abstract: DS3163 2DD2656-7
Contextual Info: 2DD2656 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage

DMP2160UW

Abstract: DS31521
Contextual Info: DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 100 mΩ @ VGS = -4.5V • 120 mΩ @ VGS = -2.5V •

Contextual Info: BAW56W DUAL SURFACE MOUNT SWITCHING DIODE Features • • • • • Mechanical Data • • Fast Switching Speed Small Surface Mount Package For General Purpose Switching Applications Lead Free/RoHS Compliant Note 1 "Green" Device (Notes 2 and 3) •

DS30228

Abstract: MMBD4448HW
Contextual Info: MMBD4448HW SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications High Conductance Lead Free/RoHS Compliant Note 1

LM 4863 D

Abstract: LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 .5 dB at 2.0 GHz . LOW VOLTAGE OPERATION . LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER