YT-45 DIODE Search Results

Contextual Info: SKiiP 26NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DS .< .<1Z M/DS -? Q HG R<K 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -¥ Diode - Inverter, Chopper MiniSKiiP 2 -* Q HG VWTX R< .P .P1Z -¥

YT-45 diode

Contextual Info: SKT 493 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT493 Features # $%&'% * '%(+, *+-% .)(/ %0123 # # # )4-5,+(1& 6+0-5,% 0+*7+8% 91& :15;,% -):%: *11,)48 </+,1. :%-)84 .)(/ -)48,% -):%: *11,)48 =99>-(+(% +4: &%?%&-% ?1,(+8%- 50 (1 @ABB C

T74LS541

Contextual Info: r= 7 ^7# SG S-TTfO M SO N T74LS540 T74LS541 OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUTS • PNP INPUTS REDUCE LOADING ■ 3-STATE OUTPUTS DRIVE BUS LINES ■ INPUTS AND OUTPUTS OPPOSITE SIDE OF PACKAGE, ALLOWING EASIERS INTERFACE TO MICROPROCESSOR ■ INPUT CLAMP DIODES LIMIT HIGH SPEED

FZ2400R17HP4

Contextual Info: Technische Information / technical information FZ2400R17HP4 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 " # $ % & "' * + " ' ,-. * / 0 & '12 * / 3 • •8 4 0 5 4 $ $ 4 9 : 4 9$ •95

Contextual Info: WSmftWX HWBBM’* -!'* $ $ £ ! Surface Mounting Device Single Diode Rectifier Diode •*WfN-äsH OUTLINE DIMENSIONS Package : 1F D1F60A + < Unit : mm -N - n y —YT—9 /Cathode mark 4.4±0-3 600V 1.2 A 3 ‘I "T 1 t 3 in Lo t- h' t c 4 v GD ! O CM 11 111 ’

transistor smd zG

Abstract: diode 400mw 4v7 smd transistor marking wy smd diode marking 325 smd transistor marking zg ZD 5V6 zener SMD XW transistor smd za transistor smd zc wy smd transistor
Contextual Info: Diodes SMD Type Zener Diodes BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation

Contextual Info: CD74HC138, CD74HCT138, CD74HC238, CD74HCT238 ^ Te x a s In s t r u m e n t s Data sheet acquired from Harris Semiconductor SCHS147A High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer Inverting and Non-Inverting October 1997 - Revised February 1999 Features

FSQS15A045

Abstract: 118T
Contextual Info: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified

SMD diode JB

Abstract: marking JB SCHOTTKY BARRIER DIODE Package Marking I60 DF30SC4M lupx SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30SC4M o u t lin e 40V 30A Feature • SM D • SM D • PR RSM • P r r s m Rating • / jv s fc fc œ s s » • High lo R ating-Sm all-R KG • D C /D C • Sw itching Regulator • D C /D C Converter Main Use • m m . y - h . O A m ss

smd diode marking UJ

Abstract: NA05HSA08 smd diode marking code UJ NA05HSA12 smd diode UJ 09 smd diode Uj smd diode schottky code marking 5A NA05HSA065 SMD CODE uj smd diode code MK
Contextual Info: i / 3 'y h 5 A 8 0 V T jw 1 5 0 V —y f 1/ 7 * — f' Schottky Barrier Diode ^ ^ ^ 0 ^ [""I 3 ~ fX 43 < * ^ M D Tj/p Nihon Inter Electronics Corporation Specification flfìi ’> 3 Construction ffliás Application C^V /îifê' 'y b K rWiMliSiSlftitffl High frequency rectification

Contextual Info: BZY97. Silicon Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerance on request. - Cathode Mark DO-41 P lastic Package Weight approx. 0.34 g

Contextual Info: SUBMINIATURE SOLID STATE LAMPS Kingbright KM2520EJ/1 KM2520EJ/1-5V Features Description •HIGH RELIABILITY The Super Green source color devices are made with •BLACK CASE ENHANCES CONTRAST. Gallium Phosphide Green Light Emitting Diode. •VIBRATION AND SHOCK RESISTANT.

Contextual Info: ~T=Í TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO f/Zìhìhn DE I ^ O ^ ï a S O 99D 16890 □ Dlbfl'ìG DT-B^-n TOSHIBA FIE L D EFFECT TRANSISTOR YT F 8 2 3 SIL IC O N N CHANNEL MOS TYPE SEMICONDUCTOR TECHNICAL DATA (DUMOSE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: S /a v M P — JVJT K Schottky Barrier Diode Single Diode O U T L IN E D IM E N S IO N S Case * 2F Type D2FS4 CD o-N — ° U n it • mm i i v —K v —7 / C ath o d e m ark 4 0 V 1.6A GO Lx. % %'4 °-t -I GO CM 2f5J I T y p e No. 6.1 V ; i/ ^ - U > ^ V N°-yT O # # / < 3 - >

3Z47

Abstract: 3Z15 3Z33 351 zener diode 3Z27 DIODE 3Z12 3Z36
Contextual Info: SILICON DIFFUSED TYPE ZENER DIODE 3Z123Z390 Unit in mm VOLTAGE DETECTOR A N D SUPPRESSOR APPLICATIONS. • • • • • Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W PRSM = 1500W / lm s expo

PCR001

Abstract: 905-118-5000
Contextual Info: I m LASEL £ i ^ J INC 15E D I 5302^05 0000^ 0 0 I IRE-161 L/% Sp ^ , o o E IRE-331,332,333 LASER DIODE INC- IRE-160FA, FB_ r 830nm SURFACE EMiniNG LED 3 FEATURES ► Excellent Reliability

Zener diode ZPY 18

Abstract: Zener diode ZPY 30 ZP33 2PY39 ZPY100 Diode Zener - ZPY Zener diode ZPY 39 Zener diode ZPY 51 Zener diode ZPY 75 Zener diode ZPY 36
Contextual Info: ZPY1 . ZPY100 Silicon P la n a r Z en e r Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances on request. - Cathode Mark These types are also available in M ELF case with the type

SLR-34VR

Abstract: SLR34VR SLR34MG SLR-34MG SLR-34 SLR34VC 34DU SLR34YY SLR-34YY SLR-34MC
Contextual Info: • □ [107354 ITT ■ RHN K /L ig h t Emitting Diodes -f Q| p *% A !■ ■ ■ " O " » SLR-34 Series $ 3.1mm Small-Sized Reflecting Lamps S e r ie s • il-J fN 'jill/D im ension s Unit : mm) S L R -3 4 -> ') - X l i , £ S ffl b , ± 11 4 m J f f t - t 1C $ Bb U tz i l Iffl W 4'

Contextual Info: ~V l TOSHIBA { DI SC RE TE /OPT O? ÍF |tD T 7 S S D 0Glt,7ci2 4 | ~ 9097250 TOSHIBA DISCRETE/OPTO ¿/oSuba TO SH IBA F IE L D EFFECT TR A N SISTO R YT F 2 3 2 S IL IC O N N CHANNEL MOS TYPE ( T[-M O S E ) SEMICONDUCTOR TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: ’7fl2flcJcH -f Q00fl03cJ 513 • R H U K /L ig h t Emitting Diodes SLN-210 ^ S e r ie s aeries SLN-210 Series S ^ Molded - ^ MLEDs LED Mini ' #Hg^J"^@ /Dim ensions Unit : mm c i±j r 1) m m ì f m t T ’& z t' 5 tz#>, . 2) fflàÉ C Jfc C tz 3 S i 7 * -

Contextual Info: CD74HC373, CD74HCT373, CD54HC573, CD74HC573, CD74HCT573 November 1997 High Speed CMOS Logic Octal Transparent Latch, Three-State Output Features Description • Common Latch Enable Control The Harris CD74HC373, CD74HCT373, CD54HC573, CD74HC573, and CD74HCT573 are high speed Octal Trans­

Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded

CD74HC138

Contextual Info: CD74HC138, CD74HCT138, CD74HC238, CD74HCT238 w Texas In s t r u m e n t s Data sheet acquired from Harris Sem iconductor SCH S147A High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer Inverting and Non-Inverting October 1997 - Revised February 1999 Features

diode KIV 62

Abstract: DIODE KIV DIODE KIV 4 kiv 49 diode diode KIV 225 KIV* diode vub 70 -16 n01 diode KIV 8 25/85/KIV* diode diode KIV 70
Contextual Info: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM IdA V M 1200-1600 V 70 A n VRRM Type 1 o- V 7 o- 1200 1600 Symbol VUB 6 0 -1 2 N01 VUB 6 0 -1 6 N01 Test Conditions n ii Maximum Ratings 1 2 0 0 /1 6 0 0