YP-3 2000 Search Results

Contextual Info: *=3- P 1 U S B 1»lug B T yp e 2000+51 0 - ^^ (P2JUSB Plu g B T yp e \^ I 02 % Material: 1.Cable:UL2725,#28xlP+#24x2C+l+AL/MY+65%Braid O.D:5.0 2.Connector: USB B Plug Note: 1.Total Length:2000t50mm 2.Color: Beige 3.Molded Type

PS735

Contextual Info: PS735 RF/Microwave THOtfUX Voltage Variable Attenuator Features: M/C/?OmVEC<yp. Maximum Ratings typical values • High Attenuation . 25.0 dB. ■ Low Insertion Loss. 2.3 dB. ■ High Third Order IP 3 +25.0 dBm.

6BW12

Abstract: T1580N T1580
Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • ô'ÎSDO'ib 00Db222 4 ■ AL6G T 1580 N T yp e n re ih e /T y p e range_ T 1 5 8 0 N 3 0 0 0 _ 3 2 0 0 _ 3 4 0 0 _ 3 6 0 0 Elektrische Eigenschaften Electrical properties

IT358S

Abstract: T358S DIN41814-152A4 S100 W101 00294Z6
Contextual Info: 0029426 A E G CORP 01 DE | OGDSfiTb 1 | T358S T yp enreihe/Typ e range_ T 3 5 8 S _ 2 0 0 * _400_ 600_800_900_ 1000_1100_ 1 2 0 0 * Elektrische Eigenschaften Electrical properties Höchstzulässige W erte

ID500A-030

Abstract: EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 etn81-055 ET1275
Contextual Info: COLLHER SEMICONDUCTOR INC MAE D 2236712 ÜGDlbSñ 2 Mb w Power Darlington Modules ICOL T - 3 > ^ '3 > 5 ' S ü t EO volts Device yp*W mMs M í£ i9 & ~ € : Switchinq Time max i ton ts tf fisec j.sec /isec. VCEO (sus) volts Pac' m w È â m Single Darlington Modules (Isolated)

FCR16

Contextual Info: CB-C8 VX 0SB5 - HHL FCR16.93M2G Vdd- 3.3 CV] F lg .a - d Ta- 20 Cdeg] * T yp ical a. V1H/V1L 7 5 3 CV3 1 -1 b. V2H/V2L CV] 7 5 3‘1 3 i l l 314 3*.3 j 1 L. a .i BL • —-—' i i i i -1 c . Fosc 1*41 .5 2.9 2.7 : .4 •? : .3 0 -.017 .1 -P -.1

Contextual Info: Wide Band Bi-Phase Modulator DMK2-18 Features .125 3 18 • 2 - 18 G H z (Usable I -26 G Hz) ■ 3 nsec. Max. Switching Speed ■ L ow Cost ._ .250 T YP “ (6 35i 300 ,i 7 62i 1.250 :3- 75) OK » 4 -4 0 N C -2 - .188:4 78101=^ (2H O LE SI 1.500 38 10i Description

Contextual Info: 2SB1391 Silicon PNP Triple Diffused HITACHI Application P o w e r s w itc h in g Outline T O -2 2 0 F M 2 A 1 . 1 Base |'o 2. C o lle c to r 3. E m itte r 1; 2 3 kQ 200 Q T y p (T yp ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

6c33c-b

Abstract: 6C33C 6c33C-B tube 6C33C tube 6c33 tube 6c33c MAX4080 ctek bt 450
Contextual Info: TPMOfl TRIODE 6C33C-B Tpnofl 6C33C-B npeflHa3HaHeH ,qrm paôOTbi b KanecTBe nponycKaiomeM JiaMnbi b aneKTpoHHbix cTa6 n n n 3 a T o p a x HanpaweHMH CTaMMOHapHOü m noflBn>KHoii ann a p a T yp b i. OBll^ME CBEflEHMfl KaTOfl - OKCMflHbiM KocßeHHoro HaKana.

SD5400CY

Contextual Info: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max

Contextual Info: 2SD970 K Silicon NPN Triple Diffused HITACHI Application Medium speed and power switching complementary pair with 2SB791(K) Outline T O -2 2 0 A B 2 1. B a s e 2. C o lle c to r (F la n g e ) 1 3. E m itte r 2 3 2 kQ (T y p ) 200 Q ~ ^ (T yp ) ¿ ^ 3 Absolute Maximum Ratings (T a 25 °C)

UL2835

Abstract: T510
Contextual Info: P 1 USB Plug A T y p e O (P 2 ) USB Plug B T yp e PIN 4 P IN 1 / O \ P IN 2 PIN 3 2000+50 Material: 1.Cable:UL2835,#28xlP+#24X2C+AL/MY+Braid/ O.DA.7 2.Connector:USB A Plug USB B Plug Item No. Color Note: 1.Total Length:2000+50mm AK672MB Blue Transparent T-517

Contextual Info: 1 2 <=• P 1 U S B Plug A T yp e © B Material: 1.Cable:Revision 2.0, UL2725,#28xlP+#24x2C+l+AL/MY+B, O.D:4.7 2.Connector:USB A Plug,30u" USB B Plug,30u" Item No. L Note: 1.Total Length:L AK672/2-1 1000+30mm 2.Color: Beige AK672/2 2000+50mm 3.Molded Type

3 PIN LED

Abstract: TPJ52 toshiba tape and reel
Contextual Info: TOSHIBA 7.5 [3 ] Explanations LED Lam p Tap e P a ck a g in g S p e cifica tio n s T yp e A • • • • • • 7.5.1 Tape specifications for automatic insertion machine 03 and ^5 diameter types Standard reel, folding tape type Anode / cathode selectable

B80 c1500 bridge rectifier

Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
Contextual Info: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247

MB90F462

Abstract: FCR16 J200
Contextual Info: MB90F462 FCR4.0MC5 Udd= 5 [Ul Fig.a~d TcP 20 [deg] -0 T yp ica l a. U1H/U1L EU] 4 3 4.5 4.6 4.6 UlH V UlL — ó— ò— u .3 .1 -.1 -.3 -.5 800 600 400 200 60 55 50 45 40 4 F05C - V o' J. I i I I I - J - i I I I I I l_ [/] - - _l_ I_ I_ I_ I_ I_ I_ I_ I_ I_I_ I_ l_

Contextual Info: MICROPAC INDUSTRIES INC 1SE D • oooou73 4 ■ V S O - 1 OOO S ER IES H YP ER A B R U P T VARACTOR TUNED V O LTA G E C O N TR O LLED O SC ILLATO RS uiEb4D PRELIMINARY* -/s" FEATURES: • 50 MHz to 3000 MHz Frequency Coverage • Fast Tuning, 100 NS Typical 3

A738

Abstract: 2SC4926
Contextual Info: 2SC4926 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = ! I G H z Typ • H igh gain, low noise figure PG = 16.5 dB Typ, N F = I . I dB T yp at f = 900 M H z Outline 1. 2. 3. 4.

diode KBE

Abstract: 2SB1387 2SD1978 T25E
Contextual Info: HITACHI 2SD1978 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Compìùmonlary pair with 2SB1387 ; 10 • Mrt 1. EnwKf 2. i ’ullîci« 3 ÏW2 vC i ASáS ¡ •ijf- .l <:yp.> O H im I I 'ii i ic im iiiii in rr.:nj Sí PO PC * (JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS (Ta=2$°C)

Contextual Info: 67868 10 I/ • 10.60 «0.10 • 5.76 «0.10 1.3 0 *0.10 T YP O 2 .2 5 *0.10 L_ 0.70 T Y P O )' 1.60 «0.10 TYPO ) NOTES: 1. MATERIAL: HOUSING: LCP 30% GLASS FILLED .BLAC K.94V -0 TERMINAL: C521 SPRING HARD THICKNESS-0.15MM 2. PLATING: CONTACT AREA: 3 0 u - GOLD PLAITNG OVER 5 0 u ' NICKEL PLATING OVERALL

Contextual Info: 10 67868 I / • 10.60 «0.10 • 5.76 «0.10 if H i 1.3 0 *0.10 T YP O E E £ 2 .2 5 *0.10 L _ m 1.60 «0.10 TYPI3) NOTES: 1. MATERIAL: HOUSING: LCP 30% GLASS FILLED .BLAC K.94V -0 TERMINAL: C521 SPRING HARD THICKNESS-0.15MM 2. PLATING: CONTACT AREA: 3 0 u - GOLD PLAITNG OVER 5 0 u ' NICKEL PLATING OVERALL

Z 0103 NA GE 704

Abstract: IC lc 8635 320
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR 4 PINS M INI MOLD PA C K AG E D R A W IN G S FEATU RES • L o w V o lta g e O p e ra tio n , L o w Phase D is to rtio n • L o w N o is e N F = 1.5 d B T YP. @ Vce = 3 V, Ic = 7

CB307

Abstract: C22B CJW SOT-23 CB438
Contextual Info: 40. 900 MHz Packagi» *C c 12* NF M H z (m A ) c 22b* (pF) (dB) > 1300 25 < 6 ,5 (3 ) < 5 (3) V(B R )C E O m in. ff (V ) 15 15 @ ft lc / f V eut 'MO CMD (m A ) (M H z) (m V ) (dB) (dB) 2 2 500 500 SS 1 I T yp*» Polarity j C LA S S A LINEAR FOR C A T V / M A T V A P P LICA TIO N S

UEL51

Abstract: uel71 Scans-048 UL44 DSAGER00041 L172U
Contextual Info: U A F21 U Á F 41 U A F 42 T yp e Vf 20 12,6 12,6 0,1 0,1 0,1 = SÉ gk H eizart D + H° Verw. D + H° D + H fl 200 200 - 200 u - 0,18 l5) 100 -2 115 . . .200 -2 8 6 1,6 -3 4 6 — 1,9 2,8 - 1,9 - — 1500 > 1 0 0 0 0 17) . i») -2 ,4 0,019 6«) 1300 > 1 0 0 0 0 17)