YP DIODE CODE MARKING Search Results

F5LC40

Contextual Info: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II

D30L60

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD

13001 s 6d

Contextual Info: Automotive Grade Product Summary Features •           AUIRS212 3,4 S Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune Gate drive supply range from 10 V to 20 V

LE 79A

Abstract: diode MARKING CODE 917 a915 BAS79D
Contextual Info: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C

diode marking gg 2a

Abstract: BAW79C 79AB
Contextual Info: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF

BAV170

Abstract: JXs sot
Contextual Info: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview  Features  Marking Symbol: QK

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview  Features  Marking Symbol: PK

DIODE S2v 73

Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Contextual Info: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w

DIODE FAST S2L

Abstract: DIODE s2l S2L60 S2L DIODE "S2L" DIODE
Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L60 600V 1-5A CD 26.5±2 • Unit • mm Package I AX10 <¡>4.4-0. 26.5« 7-0 h iîj ïl l d <> •trr50ns -N - •:-tSEPB*[ Marking S2L 07 •P F C / •SRSÍÜ • ^ B s O A ffi'E

XTR20411

Abstract: XTR20412
Contextual Info: XTRM Series XTR20410 E HIGH-TEMPERATURE FAMILY OF N-CHANNEL POWER MOSFET WITH DRIVER DESCRIPTION ▲ Operation as low-side or high-side switch. ▲ Input-to-output stages offset voltage from -40V to +40V. ▲ Operational beyond the -60°C to +230°C temperature

diode GG 79

Abstract: BAW 79 W 79AB
Contextual Info: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te

KTQ-1

Abstract: AK4180 AK4180VT XP215
Contextual Info: [ASAHI KASEI] [AK4180] AK4180 Touch Screen Controller Features: General Description: „ Sampling Frequency: 125kHz max „ Pen Pressure Measurement „ On-Chip Thermo Sensor „ Two Auxiliary Analog Inputs „ Direct Battery Measurement „ 4-wire I/F „ On-Chip Voltage Reference(2.5V)

4181avt

Abstract: 001H AK4181A AK4181AVT capacitive touch screen theory pen driver circuit diagram
Contextual Info: ASAHI KASEI [AK4181A] AK4181A Touch Screen Controller General Description: The AK4181A is a 4-wire touch screen controller that incorporates a 12-bit 125kHz sampling SAR A/D converter. The AK4181A can detect the pressed screen location by performing two A/D conversions. In addition to location, the

AK4181AVT

Abstract: 4181A pen driver circuit diagram AKM4181AVT
Contextual Info: [AK4181A] AK4181A Touch Screen Controller General Description: The AK4181A is a 4-wire touch screen controller that incorporates a 12-bit 125kHz sampling SAR A/D converter. The AK4181A can detect the pressed screen location by performing two A/D conversions. In addition to location, the

Contextual Info: ASAHI KASEI [AK4182A] Touch Screen Controller AK4182A General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in

fastest finger first indicator block diagram

Abstract: top 256 yn AK4182AVN resistive touch screen theory 001H AK4182A BLOCK DIAGRAM OF TOUCH PLATE 4182A pen driver circuit
Contextual Info: ASAHI KASEI [AK4182A] Touch Screen Controller AK4182A General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na

3sm diode

Abstract: 3SM* diode
Contextual Info: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code

fastest finger first indicator block diagram

Abstract: 4182A 001H AK4182A AK4182AVN capacitive touch screen theory top 256 yn
Contextual Info: ASAHI KASEI [AK4182A] AK4182A Touch Screen Controller General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in

fastest finger first indicator block diagram

Abstract: top 256 yn 001H AK4182 AK4182VN
Contextual Info: ASAHI KASEI [AK4182] AK4182 Touch Screen Controller General Description: The AK4182 is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182 operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in

S5151 DIODE

Abstract: S5151 Diode S5151 S-5051A1 s5c diode S-5150A3 DIODE S51 5030a DIODE MARKING CODE B3
Contextual Info: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Tem p. Range -25°C TO + 7 5 °C Storage Tem p. Range -25°C TO + 7 5 °C Sealing M ethod 0 Ring Sealed Electrical Contact Rating N on-Sw itching

Diode marking TY

Abstract: GE 027
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MALD068XG Silicon planar type For ESD protection • Package MALD068XG is optimal for cell phones and AV application, all types of I/O circuits. It is possible to protect against forward and reverse surges.