YM J Search Results

ym3812

Abstract: YMF262 YAC513 YAC516 YMF289B-S Yamaha YMF262 OPL2 YAMAHA Yamaha LFO YMF289B
Contextual Info: YAMAHA L S i YMF289B 0PL3-L 0PL3 Low Voltage version • OVERVIEW YM F289B OPL3-L is a synthesizer chip developed specially for note PC, PCM C IA (type II) card. YM F289B is com patible with YM F262 which is de facto standard in sound card market. Special functions

MIC24F11-0101T-LF3

Abstract: MIC24F11-0101T
Contextual Info: Sn 100% Ym Ym □pg WURTH ELEKTRONIK LiLüüyyju ' .620 MAX. [15.75] ELECTRICAL SPECIFICATIONS 25°C un less otherw ise noted: .984 MAX. [25.00] MIDCOM MIC24F11-0101 INDUCTANCE: 350uH m in., 100kHz, lOOmV, 8mADC, J 1 - J 2 ; J 3 - J 6 , Lp. DIELECTRIC RATING:

Contextual Info: S F 3020 PCB M O UNTED M A IN S FILTER STANDARD & MEDICAL VERSIONS 6 AMP STANDARD 1 & 3 AMP STANDARD db db 90 90 eo 80 SYM M ETR IC S YM M ETRIC .15 .4 1 4 10 40 100 SCO Frequency MHz 1 & 3 AMP MEDICAL db db 90 90 S YM M ETRIC 80 S YM M ETRIC •1.15 .4 1

1SS5004WS

Contextual Info: 1SS5004WS SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode PINNING DESCRIPTION PIN Features • Fast switching speed • High conductance • High reverse breakdown voltage rating 1 Cathode 2 Anode 2 1 YM Top View Marking Code: "YM" Simplified outline SOD-323 and symbol

Ah 55l

Contextual Info: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M

DDA124EK

Abstract: 22KW DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK J-STD-020A
Contextual Info: DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDC) Built-In Biasing Resistors SOT-26 A PXX YM NEW PRODUCT Features B C PXX YM Mechanical Data · ·

CXK584000

Abstract: CXK584000M 100 10L AD CXK584000YM
Contextual Info: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

YMF262-M

Abstract: YM3812 yac512 YMF262 Yamaha Musical Instruments YMF2622 Yamaha YMF262 yamaha opl2 snare drum ic drum sound ic
Contextual Info: YAMAHA L S I YMF262 C P JL F M O perator Type L 3 0 P L 3 • OVERVIEW The YM F262 (OPL3) was developed as a sound source LSI for com puter and gam e equipm ent. The YM F262 contains an FM sound source which m ay be controlled by softw are. In addition, five

KRC831U

Abstract: ym 7 j2
Contextual Info: SEMICONDUCTOR KRC831U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YM KRC831U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC831E

Abstract: ym 7 j2
Contextual Info: SEMICONDUCTOR KRC831E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YM KRC831E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

TSOP-32P-L01

Abstract: CXK582000M CXK582000TM CXK582000YM
Contextual Info: CXK582000TM/YM/M -85LL/10LL 262144-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

TSOP032-P-0820-B

Abstract: CXK591000M CXK591000TM CXK591000YM
Contextual Info: CXK591000TM/YM/M -55LL/70LL/10LL 131,072-word x 9-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits.

CXK584000

Contextual Info: SONY. CXK584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

YM3439-D

Abstract: YM3439 YM3439F YM3439D YM3439-F YM2149 ym21 ym34 yamaha LSI YM21 AY-3-0214 top octave generator ic
Contextual Info: YAMAHAL S i YM 3439 Software-Controlled Sound Generator SSG C • OUTLINE YM 3439 (SSGC) is a sound source L S I that controlled by micro-processor. This L S I incorporates three square-wave generators, one noise generator and a envelope generator, which enables melody

CXK584000

Contextual Info: Son y, CXK584000TM/YM/M/P ‘55lJ7rjU851J,0L -55LL770LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

Contextual Info: x CXK582000TM/YM/M -85LL/10LL 262144-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: SONY CXK582000TM/YM/M -85LL/10LL 262,144-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262,144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: DDC xxxx K NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDA) Built-In Biasing Resistors · · · · B C NXX YM Mechanical Data · · · · SOT-26 A NXX YM NEW PRODUCT

mic25113-0141

Abstract: kta 3-25 MIC25113-0141T-LF310 100KHz transformer LF-310 wurth 749 020
Contextual Info: S n IO O X Ym Ym W U R T H ELEKTRO N IK ELECTRICAL SPECIFICATIONS 25°C unless otherw ise noted: INDUCTANCE: 350uH m in. 100kHz, lOOmV, BmADC, J 1 - J 2 ; J 3 - J 6 , Lp. DIELECTRIC RATING: 1500Vrms fo r 1 m inute between P l - J l t i e P 1+P8 . TURNS RATIO/POLARITY:

c00f

Contextual Info: CXK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)

marking N20

Abstract: NPN transistor Ic 50A transistor built in resistors 47k 22k 22KW DDC114EK DDC114TK DDC114YK DDC123JK DDC124EK DDC143TK
Contextual Info: DDC xxxx K NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDA) Built-In Biasing Resistors · · · · B C NXX YM Mechanical Data · · · · SOT-26 A NXX YM NEW PRODUCT

Contextual Info: CXK582000TM/YM/M SONY -8 5 L L /1 0 L L 262,144-word x 8-bit High-Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high-speed CMOS CXK582000TM CXK582000YM 32-pin TSOP Plastic 32-pin TSOP (Plastic) static RAM organized as 262,144-words-by-8-bits.

CXK77920YM

Contextual Info: CXK77920TM/YM-11/12/15 262144-word x 9-bit High Speed Synchronous Static RAM Description The CXK77920TM/YM is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output

Contextual Info: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)