YM 633 Search Results

Contextual Info: • DISTINCTIVE CHARACTERISTICS * Single 5.0 V read, write and erase Minimizes system level power requirements * Compatible with JEDEC-standard commands Uses same software commands as E2PRO!\/ls a -ym 1 Compatible with JEDEC-standard byte-wide pinoutjm 32-pin PLCC Package suffix: PD

ST CHN 510

Abstract: 83C97 chn 809 chn 809 ST
Contextual Info: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description

94v0 c29

Abstract: IPC-SM-840 ipc sm 840 IPC-6011 IPC-SM-840 type b class 2 ipc 840 HSP50415EVAL1 IPC 6012 C7630 MD810
Contextual Info: A Ti • s' : " ï « U h - T ~ •• MD MD v n r~ c~> ceo ce s \S9 I M I 3Sfl SIO YM ss« I SM l l se a | iM I Mfl I itO ti3 Oì'J I 893 I l SM SM I 313 OM Y ò O - iiì\ I OSA | MO l [ ien teo I I 121 sta SE3 I I j't: UO SRT esi HT C30 2a • l a

HM5116405

Contextual Info: HM5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

YM 633

Abstract: 74HC10
Contextual Info: MO TO RO LA SC LOGIC MOTOROLA blE J> b3b7ESE MTI M0T4 • SEMICONDUCTOR TECHNICAL DATA MC54/74HC10 Triple 3-Inp u t N A N D Gate J SUFFIX CERAMIC CASE 632*08 High-Performance Silicon-Gate CM O S The MC54/74HC10 is identical in pinout to the LS10. The device inputs are com ­

8002 1035

Abstract: IHb si DSC-8002 2764-2 27b4 ECL-10K IDT100494 IDT101494 IDT10494 ecl 10K sram 16 bit
Contextual Info: Data Book B, Section 5.4, Page 1 IDT10/100/101494 In te g ra te d D evice T echnology, In c. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit

AN6330

Abstract: amplifier circuit panasonic an63
Contextual Info: AN6330 IC AN6330 V T R ^ * y K 7 'S ^ [ U S S / V T R Head A m p lifie r C ir c u it I ÍK S /D e sc rip tio n A N 6330 Ü , V T R <r>^ • ¡Nf U n i t I mm / KT > * f*E]S& -C-f c, 1<I r 2 <L Íü /F e a tu re s • AN 6 3 3 0 # L t i ' i t n I>12 J I>11

S6364

Abstract: ROM 23128
Contextual Info: static CMOS &NMOS Familyof ROMs -> GOULD AMI > Sem iconductors Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS • Fully Static Operation

Contextual Info: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also

Contextual Info: Ù J Â T K I N S - JO H N S O N CO 73 D E § T b E lt .S 'i □ □ O t .T a i 3 T -S H ! 1 0 0 • 2 0 0 0 MHz THIN FILM SPST POWER SWITCH • LOW INSERTION LOSS: < 1.8 dB TYP. • HIGH CW INPUT POWER CAPABILITY: 2 WATTS • HIGH ISOLATION: > 4 0 dB (TYP.)

RGB666

Abstract: RGB565 MB87 YUV444 YUV422 BPP24 MB87*2120 RGB333 MB87J2120 MB87P2020
Contextual Info: Application programming Interface for C C-API  Fujitsu Microelectronics Europe GmbH Am Siebenstein 6-10 63303 Dreieich-Buchschlag, Germany History Revision V1.0 V1.1 V1.2 Date 01.06.01 07.06.01 08.06.01 V1.3 09.07.01 Comment New Document Update midlevel functions

ic sc 6200

Abstract: sc 6200 ic diagram sc 6200 ic sc 6200 circuit sc 6200 ic type tone control mono type with volume bass TDA 6600 TDA i2c tone volume tda stereo TDA6200
Contextual Info: S IE M E N S TV Stereo Tone Control IC with Quasi-Stereo Section, Channel 1/2 Switch, SCART Input, and I 2C Bus Control P re lim in a ry Data TDA 6200 B ip o la r IC Features • Treble, bass, balance, and volume control by means of an integrated digital-to-analog

NEC 424400

Abstract: MPD424400LA
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M P D 4 2 4 4 0 0 -L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /iPD424400-L is a 1,048,576 w ords by 4 bits dynam ic CMOS RAM. The fast page mode capability realize high speed access and low power consum ption.

BUK856-450IX

Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _

epson ea-d

Contextual Info: EPSON P F 28 2-07 SED1278F/D Dot Matrix LCD Controller Driver • 1/8,1/11 or 1/16 Duty Dot Matrix Drive • Built-in Character Generator ROM and RAM RAM 248charactIre • Maximum Simultaneous Display of 80 Characters (With extension LCD driver) • DESCRIPTION

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

um5003

Abstract: UM500 UM5003D-01 melody chip circuit diagram for buzzer circuits
Contextual Info: UM5003D 3 Sec Voice Synthesizer with Serial/Random Trigger Features • ■ ■ ■ ■ Mask options for: — Voice data for words — Various w ord com binations for every section — Repeats up to 16 times — Mute intervals m aximum 5 sec. for every section

Contextual Info: 1 ¿9 ft? prodtK-tn M ic r o s e m i 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v iiie , P A 1 8 9 3 6 -1 0 1 3 T e i: 2 1 5 8 3 1 -9 8 4 0 SD1500 RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATiONS « DES'-GNED FOR USE IN LONG PULSE Lb a n d a p p l ic a t io n ;-; UKE RADAR, JTtOS.

NPCT

Abstract: LD128 NPCT+411 NPCT 4
Contextual Info: im s L 'B ’S'-r ic s VCR M52062AFP S-VHS SYSTEM VCR CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52062AFP processes VHS and S-VHS VCR color signals. This circuit consists of main and sub B.M.'s, burst-up/down switch, VCXO, 320-fh VCO, ACC, APC, AFC, killer circuit,

ATF-21100

Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
Contextual Info: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

BTS413A

Abstract: v6b* valves N 413 M
Contextual Info: f I BTS 413 A PROFET • • • • • • • • • • H igh-side switch S h o rt-c irc u it protection O vertem perature protection O verload protection Input protection O pen-load detection in o ff-co n d itio n Negative transien t voltage peak at inductive load lim ited to - 1 0 V

988U

Abstract: m1963m SDIP20 MHB106 control unit Philips 432 T
Contextual Info: IN TE G R A TE D CIRCUITS [ n lE E T TDA9880 Alignment-free multistandard vision and FM sound IF-PLL demodulator Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors 1998 Apr 16 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

mv1401

Abstract: rn550
Contextual Info: MOTOROLA MV1401, MV I403, MV1404, MV1405, SEMICONDUCTOR TECHNICAL DATA H H H H Tuning Diodes H IG H T U N IN G R A T IO V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S SILICON HYPER-ABRUPT TUNING DIODES . . . designed w ith high capacitance and a capacitance change of