YIELD Search Results

12350

Abstract: PS-12350 24 volt 300 AH
Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and

PS6326

Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-632 6 Volt 3.5 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill proof construction allows safe operation in any position. Power/volume ratio yielding unrivaled

12 volts 5 AH battery

Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-1208 12 Volt 0.8 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill proof construction allows safe operation in any position. Power/volume ratio yielding unrivaled

panasonic msds

Abstract: 100AH battery charging PS-1250 battery 150 Ah 20HR
Contextual Info: 12 Volt 5.0 AH PS-1250 Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)

panasonic msds

Abstract: MH20845 24 volt 300 AH 20HR
Contextual Info: PS-650LS & LF 6 Volt 5.0 AH Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)

PSC-12800A

Abstract: PS-1270 panasonic msds 20HR
Contextual Info: 12 Volt 7.0 AH PS-1270 Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)

A1270

Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Contextual Info: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

HA5013

Abstract: HA5013IB HA5013IP HA-5020 HA5025EVAL HP4195 BUT27
Contextual Info: HA5013 Data Sheet September 1998 File Number 3654.4 Triple, 125MHz Video Amplifier Features The HA5013 is a low cost triple amplifier optimized for RGB video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less bandwidth

MIC4452

Abstract: APT8M100B APT8M100S
Contextual Info: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

8114

Abstract: APT12M80B APT12M80S MIC4452
Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT9M100B

Abstract: APT9M100S MIC4452
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT7M120B

Abstract: APT7M120S MIC4452
Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT56M50B2

Abstract: APT56M50L MIC4452
Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MLG1608A2N7S

Abstract: MLG1608A MLG1608A3N9S
Contextual Info: Multilayer Chip Inductors Magnetic Shielded For UHF Band MLG Series MLG1608 TYPE FEATURES • High self-resonant frequency. • Multilayer monolithic construction yield high reliability. APPLICATIONS For high frequency applications including mobile phones,

APT4M120K

Abstract: MIC4452
Contextual Info: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: LNK584-586 LinkZero-AX Zero Standby Consumption Integrated Off-Line Switcher Product Highlights Lowest System Cost with Zero Standby Consumption • Simple system configuration provides zero consumption standby/Power-Down with user controlled wake up • Very tight IC parameter tolerances improves system manufacturing yield

Contextual Info: EMI Ferrite Chip Beads Steward’s surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

HZ1206E601R-00

Abstract: HZ0603B102R-00 hz0805e601r-00 HZ0603 HZ0402A601R-00 HZ0603C601R hz0603c601r-00 HZ0805C202R-00 HZ0402 HZ0805D102R-00
Contextual Info: Steward’s surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields rugged components with

63S081

Contextual Info: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran­ tee greater than 98% programming yields

Contextual Info: Am27S18/19 256-Bit 32 x 8 Bipolar PROM > DISTINCTIVE CHARACTERISTICS 3 •Nj Ultra high speed Highly reliable, ultra-fast programming Piatinum-Silicide fuses High-programming yield • Low-current PNP inputs • High-current open collector and three-state outputs

dk qs

Abstract: CLTO20
Contextual Info: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,

Contextual Info: Am27Sl2/13 a 2,048-Bit 512 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS ro •«j • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

ecl pal 16 macrocells

Abstract: HD b3c
Contextual Info: AmPAL*10H20EG8/AmPAL10020EG8 IMOX-III ECL Programmable Array Logic PRELIMINARY Asynchronous-RESET and PRESET capability Power-up RESET capability PRELOAD for improved testability Special designed-ln test features for full AC and DC testing Platinum-silicide fuses ensure high programming yield,