Y2C DIODE Search Results

Contextual Info: PERFORMANCE SEMI CONDUCTOR EOE D • TObSST? 0001500 1 ■ P33PCT825A/B BUS INTERFACE REGISTER à - FEATURES ■ 3.3V +0.2V Power Supply I Buffered Common Clock Enable EN and

4503B

Abstract: 45038 4502B 45028
Contextual Info: AVG Sem iconductors DDi T echnical Data Hex Inverter/Buffer Hex Non Inverting Buffer DV4502B DV4503B This device is a strobed hex buffer/inverter with 3-State out­ puts, an inhibit control, and guaranteed TTL drive over the tem perature range. The DV14502B includes an input inhibit.

Y2C diode

Abstract: y6c diode fl03 QS29FCT2520 AM29520
Contextual Info: QS29FCT520T, 521T, 2520T, 2521T Q QS29FCT520T QS29FCT521T High Speed CMOS Multilevel Pipeline Registers QS29FCT2520T QS29FCT2521T FEATURES/BENEFITS • • • • Pin and function compatible to the Am29520 Ground bounce controlled outputs Reduced output swing of 0-3.5V

Contextual Info: Am29C827/Am29C828 Am29C927/Am29C928 Am29C827/Am29C828 Am29C927/Am29C928 High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • • • High-speed CMOS buffers and inverters - D-Y delay = 7 ns typical Low standby power JEDEC FCT-compatible specs

am29c841

Abstract: 17Z6 Am29C941 Am29C843
Contextual Info: Am29C841 / Am29C843 Am29C941 / Am29C943 High-Performance CMOS Bus Interface Latches • • • JEDEC FCT-compatible specs Extra-wide 9- and 10-bit data paths Am29C900 DIP pinout option reduces lead inductance on Vcc and GND pins GENERAL DESCRIPTION The Am29C841 and Am29C843 CMOS Bus Interface

PIC1670

Abstract: ASCII keyboard Key rollover kb3660s Master Instrument
Contextual Info: GENERAL INSTRUMENT KB3660S PROGRAMMABLE MICROCOMPUTER SERIAL KEYBOARD ENCODER FEATURES: PIN CONFIGURATION 40 LEAD DUAL IN LINE - Microcomputer based keyboard encoder - Single +5V power supply TOP VIEW - On-chip oscillator for 4MHz crystal - N-key roll-over

01A SOT23

Abstract: LM4041CYM3-1.2
Contextual Info: LM4040/LM4041 Precision Micropower Shunt Voltage Reference General Description Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the subminiature 3mm x 1.3mm SOT-23 surface-mount package. The LM4040 is available in fixed reverse breakdown

Contextual Info: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus com m unica­ tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses

Contextual Info: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus communica­ tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses

keyboard encoder auto

Contextual Info: — _ _ _ - MICROCHIP TECHNOLOGY INC _ “-““ GENERAL INSTRUMENT — A3 t D • ^ blQ3201 □0D3T4S 3 ■ q i ~ i a ~05 '— \ KB3660S PROGRAMMABLE MICROCOMPUTER SERIAL KEYBOARD ENCODER FEATURES» - PIN CONFIGURATION 40 LEAD DUAL IN LINE

HC4353

Abstract: C4351
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4351 M C54/74HC4352 M C54/74HC4353 Advance Information Analog M ultiplexers/ Dem ultiplexers w ith Address Latch High-Performance Silicon-Gate CM O S N SUFFIX PLASTIC CASE 738-03 The M C 54/74H C 43 51, M C 54/74H C 43 52, and M C 54/74H C 43 53 utilize silicon-gate

C4353

Abstract: hc4351
Contextual Info: MOTOROLA SC { L O G I C ! OB DE | LBb7ES5 □OñDbtl 5 MOTOROLA I -, 5H J SEMICONDUCTOR TECHNICAL DATA Advance Information Analog Multiplexers/ Demultiplexers with Address Latch MC54/74HC4351 MC54/74HC4352 MC54/74HC4353 High-Performance Silicon-Gate CM OS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4351 MC54/74HC4352 MC54/74HC4353 Advance Information Analog M ultiplexers/ Dem ultiplexers w ith Address Latch High-Performance Silicon-Gate CM O S The MC54/74HC4351, MC54/74HC4352, and MC54/74HC4353 utilize silicon-gate

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

SMP25N06

Abstract: 1811PA250-3C8 1811PL00 1N4148 1N5822 AN703 Si9110 Si9111 TL431C toroidal transformer 120v
Contextual Info: AN703 Siliconix Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and batteryĆpowered equipment, the advantages of MOS over bipolar technology for pulseĆwidth modulation PWM controllers are significant.

SMP25N06

Abstract: 1811pl00-3c8 ferroxcube 43 toroid core equivalent diode for R2C 1811P transistor a1m Si9110 1811PL Siliconix AN703 A1m anode
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS

74S556

Abstract: DIODE s3l 65 diode S3l 83 max5076 88-pin-grid 54/74S556
Contextual Info: 16 x1 6 M u ltip lie r/D iv id e r S N 74S 516 Features/Benefits • Co-processor for enhancing the arithmetic speed of all present 16-bit and 8-bit microprocessors • Bus-oriented organization Ordering Information PART NUMBER PACKAGE TEMPERATURE SN74S516

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden

6MBP75RS120

Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Contextual Info: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.