Y22 C Search Results

Contextual Info: SKN 2,5 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 3$>@ 3$$@ 3 A22 Y22 0O22 3 A22 Y22 0O22 >DE ONQ]2A >DE ONQ]2Y >DE ONQ]0O 0122 0122 >DE ONQ]01 SKN 2,5 Features # $%&%' % & *+,-%( ./ +) 0122 3 # 4%'5%+67 5%+,* 7,(% 86+9 -*,( # 6:(.*,+)' ;:)<% (6<% +9'%,<%< (+.< =>? @A

Contextual Info: Incremental encoders Hollow shaft ø17 to ø27 mm Resolution 200…2048 pulses ITD 40 A 4 Y22 Features – Encoder with hollow shaft ø17-27 mm – Resolution max. 2048 ppr – Optical sensing – Through-hollow shaft – Mounting by torque support – TTL or HTL output signals

Contextual Info: Incremental encoders End shaft ø10 to ø14 mm Resolution 2…60 pulses ITD 2 A 4 Y22 Features – Encoder with end shaft ø10-14 mm – Resolution max. 60 ppr – Optical sensing – Mounting by torque support – TTL or HTL output signals – Flange socket radial

Contextual Info: Incremental encoders End shaft ø10 to ø14 mm Resolution 50…1024 pulses ITD 20 A 4 Y22 Features – Encoder with end shaft ø10-14 mm – Resolution max. 1024 ppr – Optical sensing – Mounting by torque support – TTL or HTL output signals – Flange socket radial

AN215A

Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

Contextual Info: Accessories Connectors and cables Connector S2BG12 with cable ITD Features Terminal assignment 10164705 Connector S2BG12 Connector S2BG12 Core colour 11072792 Connector S2BG12 with cable (ITD) L = 1 m Pin 1 pink 11072796 Connector S2BG12 with cable (ITD) L = 2 m

Contextual Info: Accessories Connectors and cables Connector S2BG12 with cable ITD Features –– Screened connection cable with M23-female connector (12-pin) and wire end sleeves for ITD Part number Connector S2BG12 11072792 Connector S2BG12, 1 m cable (ITD) 11072796 Connector S2BG12, 2 m cable (ITD)

Contextual Info: 2. S c h e m a tic : 1. M e c h a n ic a l D im e n s io n s : X F MR S XFADSL48 . WWW Chip B 0.536 Max 0.560 Max X o o CM O Ò -H o o l_ j ' _ C. wipxiA ' -o (Line) 6 3.3CS:1CS±1% Tie Pins 2 — 4, 7 — 9 D 0.400 DC Res.: Pins 10— 7 0.774 Ohms Max

J307

Abstract: transistor j307 A3049 CA3049T CA3102 equivalent CA3049
Contextual Info: •A3049, CA3102 CO^ ca" OÏ a 'v * e v t'“ Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz DecaTlßer 1998 Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent

pnoz 6

Abstract: D-73760 IEC 947-4-1
Contextual Info: Emergency Stop Relays, Safety Gate Monitors Category 4, EN 954-1 PNOZ 6 Technical Details Electrical Data Supply Voltage Emergency stop relay and safety gate monitor in accordance with VDE 0113, EN 60 204-1 and IEC 204-1. Features ● Operating mode can be

CA3049T

Abstract: A3102 transistor j307 3049T CA3102 J307
Contextual Info: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent

g21 Transistor

Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
Contextual Info: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

CA3102

Abstract: CA3102E CA3102M MS-012-AB
Contextual Info: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

T58LC

Contextual Info: ADVANCE M T58LC 64K 32B 2 6 4 K X 32 S Y N C B U R S T SRAM M IC R O N 64K x 32 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • F ast access tim es: 9 ,1 0 ,1 1 , 12 an d 14ns Fast O E access tim es: 5 and 6ns

TRANSISTOR 58050

Abstract: 58050 transistor
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN

CA3102

Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
Contextual Info: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

Contextual Info: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt

melsec fx 48mr

Abstract: mitsubishi FX-48MR FX-48MR FX-48MR-ES mitsubishi FX on 60 mr-es Fuse x23 mitsubishi fx melsec function block FX-HBR011A 80VA
Contextual Info: FX-HBR011A DATE: JUNE 1995 PAGE: 1 OF 2 TM SPECIFICATIONS OF THE FX-48MR-ES Introduction The FX-48MR-ES is a micro PC with a 48 I/O capacity. The inputs for this unit are 24V DC and the outputs are relay. The power supply for the PC is 24V DC. The FX-48 MR-ES is expandable up to 256 I/O points by using

Contextual Info: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

transistor bl 187

Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Contextual Info: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

y1 npn

Abstract: 538 NPN transistor
Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION

BF747

Abstract: MBB400 sot23-4 marking a1
Contextual Info: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.

bf547 philips

Abstract: BF547 B12 IC marking code marking code 604 SOT23
Contextual Info: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation

Transistor AC 187

Abstract: AC 187 npn transistor TO 1 187 transistor npn
Contextual Info: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.