Y12N Search Results
Y12N Price and Stock
IXYS Corporation IXTY12N06TMOSFET N-CH 60V 12A TO252 |
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IXTY12N06T | Tube | 70 |
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IXTY12N06T |
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IXYS Corporation IXFY12N65X3DISCRETE MOSFET 12A 650V X3 TO25 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFY12N65X3 | Tube | 350 |
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Powerex Power Semiconductors CM300DY-12NFIGBT MOD 600V 300A 780W MOD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CM300DY-12NF | Bulk | 10 |
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CM300DY-12NF | 1 |
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Powerex Power Semiconductors CM200DY-12NFIGBT MOD 600V 200A 650W MOD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CM200DY-12NF | Bulk | 10 |
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CM200DY-12NF | 80 |
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JRH ELECTRONICS MS27475Y12N4PHERMETIC CONNECTOR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MS27475Y12N4P | Bulk | 1 |
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Y12N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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THMY12N11C70Contextual Info: TO SH IBA TH M Y12N 11C70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT DRAMs and an unbuffer on a printed circuit board. |
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THMY12N11C70 216-WORD 64-BIT THMY12N11C TC59SM816CFT 64-bit | |
sMD .v05
Abstract: smd code marking v37 U01 SMD smd V05 Transistor y4n smd marking code v05 smd code v36 smd marking code y12n Transistor y2n marking v6 78 diode
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P-LCC-68-1 GPL05099 sMD .v05 smd code marking v37 U01 SMD smd V05 Transistor y4n smd marking code v05 smd code v36 smd marking code y12n Transistor y2n marking v6 78 diode | |
STEP UP transformer 110- 220V
Abstract: YM-208NDV 1000W 12v to 220v inverters circuit diagrams 1000w DC 12v to AC 220v 2km fm transmitter
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Y-0711 STEP UP transformer 110- 220V YM-208NDV 1000W 12v to 220v inverters circuit diagrams 1000w DC 12v to AC 220v 2km fm transmitter | |
AN30
Abstract: AN306 p922
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AN306 08S/VTR 767kHz, 688kHz 767kHz 08max. 81min 47/iF AN30 AN306 p922 | |
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Contextual Info: SamsungSemi conduct orEur ope2008 i magi net henews t andar di nmemor yper f or mance Samsung cont i nues t ol ead i n DRAM memor y wi t h ournew DDR3 memor y modul el i neup.Whet heri nst al l ed i n newgener at i on PC' s, hi ghper f or mancewor kst at i |
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