Y 331 TRANSISTOR Search Results

N331

Abstract: SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330
Contextual Info: WT 4-2 W T 4-2 P 331 -N 331 W T 4-2 P 132 -N 132 V Scanning range ¥ Y 130 m m - Features 12- W T 4-2 P 330 -N 330 Red light sender LED to assist with setting-up Scanning distance is steplessly variable A Background suppression • Adjustment aided by LED signal

Contextual Info: T ra n s is to rs <S u rfa ce Mounted T y p e s > •SMT SC-59/Japanese SOT-23 •NPN Transistors Function Type ■ Ic (mA) Max. Polarity DG07717 BV ceo (V) BV ebo (V) 331 ■RHM @IC & VcE hpE Min. nonm Max. (mA) f T (MHz) Min. (V) Cob (pF) Max. LNGPA MMST5086

VE880

Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
Contextual Info: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers

Contextual Info: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

transistor B A O 331

Abstract: D F 331 TRANSISTOR
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

DF 331 TRANSISTOR

Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
Contextual Info: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

p331

Abstract: SGSP130
Contextual Info: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate

XC6902N

Abstract: XC6902 C01 SOT23 ta1323
Contextual Info: XC6902 Series ETR0363-002a -16V Input Three Terminal Negative Voltage Regulator •GENERAL DESCRIPTION The XC6902 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifiers, driver transistors, current limiters and phase compensators.

transistor h 331

Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Contextual Info: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten

XC6901D

Abstract: XC6901 p-channel mosfet with diode sot89-5 ta1527 marking 005c
Contextual Info: XC6901 Series ETR0343-005c 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.

XC6901D331MR-G

Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2
Contextual Info: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.

bpw 81 t

Abstract: SFH213 sfh 206 BP 104 FAS
Contextual Info: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren

2SB133

Contextual Info: ROHM CO MOE LTD TASÓTE D ODGSbST I RHM S 2SB1335 h V > y X $ //Transistors 7=33-^ 9 2SB133; X fcf £ *r V 7 ¡ V f b - i~ M PNP y V □ > h ÿ > y X $ MJMÌ&WJjiMtymffì/Low Freq. Power Amp, Epitaxial Planar PNP Silicon Transistor 1 VcE sat) VcE(sat)=-0.5V (Typ.) Ic /I b = —

Contextual Info: O rdering num ber: EN 2 4 3 4 2SD1887 No.2434 N PN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection _ Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features

Contextual Info: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0

2SD1767

Contextual Info: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o

BSP15

Abstract: BSP19 BSP20
Contextual Info: •i bb53T31 0055450 Tlfl H A P X N AMER PHIL IPS /DISCRETE BSP19 BSP20 b?E » SILICO N PLANAR EPITAXIAL TRANSISTO RS NPN transistors in m iniature plastic envelopes intended fo r use in a m plifier and switching applications. Com plem entary pnp types are BSP15/16.

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

2SB1316A

Contextual Info: Is ~7 > y 7 . $ / Transistors S 2 2SB1316 X fc: B 1 3 1 6 V T \s -? Is -H fc PNP V V =>> h =7> V * 2 h>& ü) Epitaxial Planar PNP Silicon Transistor Darlington) fé J ü í& ^ íltiff l/ l- o w Freq. Power Amp. /D im ensions (Unit : mm) 1) SET'h 2) 2 . 3 - ; =