14522
Abstract: DM6030HK
Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD February 2009 - Rev 02-Feb-09 Features 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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02-feb-09p1058-bdmil-std-883ad-000v+2xp1058-bd-ev1xp1058-bd
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XP1052-SC
Abstract: 27 Mhz power amplifier XL101 power amplifier mmic XP1055-BD ir amplifier QFN 7X7 XP1035-BD XP1039-QJ rf sot89 50
Contextual Info: N E W P RO D U C T S – M AY 2 0 0 8 Our MMIC Product Matrix contains a snapshot view of our current product line. As Mimix strives to provide extensive applications engineering support and customer service, the product development categories for our MMIC devices should help design engineers
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xr1002-20dbm-80dbmxp1043-qh+15xr1011-bdxr1011-qhxx1007-bdxx1007-qtxr1004xp1052-sc27 mhz power amplifierxl101power amplifier mmicxp1055-bdir amplifierqfn 7x7xp1035-bdxp1039-qjrf sot89 50
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tanaka wire
Abstract: dm6030hk tanaka epoxy
Contextual Info: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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12-may-08p1058-bdmil-std-883passivatid-000v+5xp1058-bd-ev1xp1058-bdtanaka wiredm6030hktanaka epoxy
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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xg1015-sexb1013-qtcmm6001-bdcfp0103-sp+6cmm6004-bdxz1003-qtxu1016 qhxp1073-bdxd1008-qhxp1035-bd
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XP1058
Abstract: BD 149 transistor bd 36 930 DM6030HK XP1058-BD
Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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p1058-bd04-jan-10mil-std-883sur058-bd-ev1+5xp1058-bdxp1058bd 149 transistorbd 36 930dm6030hk
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