XN06 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06534 (XN6534) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

Contextual Info: 27/05/2014 www.crouzet.com Sandwich communication extensions XN07 Part number 88974250 Allows to create a Millenium 3 network Exchange of 6 to 1 words with FBD programming Only compatible with Millenium 3 Smart controllers Periodic exchanges with max. 6 XN06 extensions

UN2211

Abstract: UNR2211 XN06211 XN6211
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06211 (XN6211) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

Contextual Info: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 5° 1 0.65±0.15 3 0.4±0.2 6 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package

Contextual Info: Composite Transistors XN06115 XN6115 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 5 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1215 + 2SD1360

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

UN1215

Abstract: UNR1215 XN06215 XN6215
Contextual Info: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

XN07

Abstract: XN06
Contextual Info: www.crouzet.com Sandwich communication extensions XN07 Part number 88974250 Exchange of input/output state with FBD programming Only compatible with Smart controllers Periodic exchanges with max. 6 XN06 extensions Automatic recognition of number of slaves

2SC1215

Abstract: 2SD1360 XN06542 XN6542 2SD136
Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

2SC3904

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name

2SD0601A

Abstract: XN06501G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06501G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in

UN2114

Abstract: UNR2114 XN06114 XN6114
Contextual Info: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 5° 1 0.65±0.15 3 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

UN2113

Abstract: UNR2113 XN06113 XN6113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06113 (XN6113) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05

XN06401G

Abstract: 2SB0709A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in

2SD1360

Abstract: 2SC1215 XN06542 XN6542
Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 6 1.50+0.25 –0.05 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05

UN2116

Abstract: UNR2116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package

2SB0709A

Abstract: 2SB709A XN06401 XN6401 206F
Contextual Info: Composite Transistors XN06401 XN6401 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10

UNR2216

Abstract: XN06216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

UNR2215

Abstract: XN06215G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06215G Silicon NPN epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

2SC3110

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06537G Silicon NPN epitaxial planar type For wide-band low-noise amplification • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo