XB100 Search Results

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. Input Power DC - 1.5 GHz

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. Input Power DC - 1.5 GHz

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 1 - 6 dB 10 - 40 dB VSWR Max. Input Power DC - 1.5 GHz ±0.50 dB

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 1 - 6 dB 10 - 40 dB VSWR Max. Input Power DC - 1.5 GHz ±0.50 dB

XB1008-QT-EV1

Abstract: XB1008-QT XB1008-QT-0G00 XB1008-QT-0G0T
Contextual Info: XB1008-QT Buffer Amplifier 10.0-21.0 GHz Rev. V1 Features •         Functional Block Diagram Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

XB1007-BD

Abstract: XB1007-BD-000V XB1007-BD-EV1 ma com 4 pin mmic
Contextual Info: XB1007-BD Buffer Amplifier 4.0-11.0 GHz Rev. V1 Features Chip Device Layout •       Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. Input Power DC - 1.5 GHz

XB1008-BD

Abstract: XB1008-BD-000V XB1008-BD-EV1
Contextual Info: XB1008-BD Buffer Amplifier 10.0-21.0 GHz Rev. V1 Features Chip Device Layout •        Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

332E

Abstract: XB1006-BD XB1006-BD-000V XB1006-BD-000W XB1006-BD-EV1 17578
Contextual Info: XB1006-BD Buffer Amplifier 18.0-38.0 GHz Rev. V1 Features Chip Device Layout •       High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. Input Power DC - 1.5 GHz

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. Input Power DC - 1.5 GHz

XB1005-BD-000V

Abstract: 5609 transistor XB1005 XB1005-BD XB1005-BD-EV1 720-0164 15-1090 MAX 77693 143-028 876-1424
Contextual Info: XB1005-BD Buffer Amplifier 35.0-45.0 GHz Rev. V1 Features Chip Device Layout •       High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias

Contextual Info: ATTENUATORS SMA, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XB100W-XX, XB100W-XXF & XB100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 1 - 6 dB 10 - 40 dB VSWR Max. Input Power DC - 1.5 GHz ±0.50 dB

206E

Abstract: XB1004-BD XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1
Contextual Info: XB1004-BD Buffer Amplifier 16.0-30.0 GHz Rev. V1 Features Chip Device Layout •      High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

Contextual Info: FREQUENCY CONTROL PRODUCTS SURFACE MOUNT CLOCK OSCILLATOR DFN S11-ELCPI 3.3 V & DFN S11-EDCPI (2.5 V) L±0.2 FEATURES 5.08 Fundamental and 3rd overtone mode crystals 2.4 5.0±0.2 10 TO 200 MHz Low jitter L H 7.5 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1

Contextual Info: SURFACE MOUNT LVDS CLOCK OSCILLATOR DFN S11-MLLPI 3.3 V & DFN S11-MLDPI (2.5 V) L±0.2 FEATURES 5.08 Low noise PLL multiplication circuit 2.4 5.0±0.2 27 TO 800 MHz Low jitter L H 7.0 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1 2 3 4 5 6 6 1 2.4 E/D NC GND

Contextual Info: SURFACE MOUNT CLOCK OSCILLATOR DFN S15-B/ BL 5.0±0.2 3.2±0.2 1.2 FEATURES 1.8 to 125 MHz 1.3 MAX Standard ceramic package 2.54 HCMOS/TTL compatible output APPLICATIONS Clocking/Datacomms /PCMCIA DFN S15 NC/Enable GND Output Vcc 1 2 3 4 4 3 PC board footprint

Contextual Info: SURFACE MOUNT PRECISION OSCILLATOR DFN S1-KEC/KEG 5 V & DFN S1-LEC/LEG (3.3 V) 14.8±0.3 KEY FEATURES Marking: 5.08 ± 20 ppm/15 years stability available KEC/LEC version: 1.4 9.1±0.2 16 to 400 MHz 1 ps RMS jitter over 50 kHz to 80 MHz B.W. +0.1 -0.2 1.0

Contextual Info: SINE WAVE SURFACE MOUNT PXO DFN S8-MLS 3.3 V 19.8±0.3 KEY FEATURES 15.24 12.8±0.2 300 to 500 MHz ± 20 ppm/15 years stability available 1.27 1.65 Analogue frequency multiplication APPLICATIONS H±0.2 1.2 18.4 Microwave transmissions H = 5.50 mm DFN S8

QFN 7X7

Abstract: XB1004 XP1013 XU1003-QD XU1003-QD-0N00 XU1003-QD-0N0T XU1003-QD-EV1 2ghz diode
Contextual Info: 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm U1003-QD August 2006 - Rev 31-Aug-06 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 7x7 mm, QFN

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

inductance R600

Contextual Info: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing