X221 Search Results

Contextual Info: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

XAAR 128

Abstract: xaar 1K x 4 static ram ttl S3V 77 S3v 32 RR-504 RR-520 X2212 X2212I
Contextual Info: X Commercial Industrial 1K X2212 X2212I S K 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fe a ­ tures the JEDEC approved pinout for 4-bit-wide m em o­ ries, com patible with industry standard RAMs. FEATURES • Single 5V Supply

X221

Abstract: 0633 CRYSTAL packag
Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. WWW.CONWIN.COM PRODUCT D ATA SHEET CRYSTAL CONTROLLED OSCILLATORS CW X221 125M 0633 1.8V LVCMOS SURFACE MOUNT 7.5x5mm CRYSTAL CLOCK OSCILLATOR ABSOLU TE MAX IMUM R ATINGS

X2210

Abstract: RR-504 RR-520 X2210I xicor x2210
Contextual Info: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: x X2212M Military 1K a r 256 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: V qc = 3V Typical • 100 Year Data Retention

Contextual Info: J|m 256 Bit Military X2210M 64 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2210 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply • Fully TTL Compatible

Contextual Info: 1K Commercial X2212A Jtor 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles

Contextual Info: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u

Contextual Info: occ Bit 256 Blt X2210 X2210I Commercial Industrial 64 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2210 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply

Contextual Info: 1K Commercial Industrial X2212 X2212I 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply

SGSP477

Contextual Info: f Z 7 SGS-THOMSON SGSP477 CHIP ^ 7 # llD æ O IlL lK g T O R O D Ê i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils

RR-504

Abstract: RR-520 X2210 X2210I NOVRAM
Contextual Info: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

IRF151

Contextual Info: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A

Contextual Info: 1K Commercial X2212A 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 250 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: T SCS-THOMSON MTH40N06 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u 6100 A 16 ± 2 mils

x2210a

Contextual Info: 256 Bit Commercial X2210A Hier 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 250 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: H¡ar A D V A N C E D IN FO RM A TIO N 256 Bit Commercial Industrial X22C10 X22C10I 64 x X 4 Bit Nonvolatile Static RAM FEATURES • 100% Compatible with X2210 — With Timing Enhancements • Infinite Array Recall, RAM Read and Write Cycles • High Reliability

RR-515

Contextual Info: nri> Rit DIX X2210 X2210I Commercial Industrial 64 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2210 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply

Contextual Info: X2212 X2212I Commercial Industrial 1K Jtear 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • S ing le 5V Supply

X2212

Abstract: NOVRAM X2212M
Contextual Info: J 1K Military X2212M f i a c 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 features the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply • Fully TTL Compatible

Contextual Info: 256 Bit Commercial Kar X2210A 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 250 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: 1K Military X2212M 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fea­ tures the JEDEC approved pinout for 4-bit-wide memo­ ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply • Fully TTL Compatible

X2212

Abstract: RR-504 RR-520 X2212I NOVRAM
Contextual Info: Commercial Industrial 1K X2212 X2212I XSflT 256 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E^PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: f Z 7 SGS-THOMSON MTH40N06 CHIP Hö»lllLI giriS [iülO(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u