X16M Search Results

c040

Contextual Info: DENSE-PAC MICROSYSTEMS 16 Megabit High Speed C M O S SRAM 1 DPS M X 16 M K n 3 SLCC Stack D E S C R IP T IO N : The D PS1M X16M K n3 High Speed S R A M "S T A C K " modules area re volu tion ary new m em ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ.

cb-rj

Contextual Info: DENSE-PAC ^ _ Me abit CMOSdram 32 8 MICROSYSTEMS X16M2H3 PRELIMINARY DESCRIPTION: TheDPD2M X16M 2H3 "STA C K" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ stacked and leaded for

93c86vi

Abstract: 93C86V
Contextual Info: CAT93C86 Rev. C 16K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ High speed operation: 3 MHz Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear

Contextual Info: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

General Electric C 524 k

Abstract: MR53V8052J-XXRA DIP42-P-600-2 MR53V8052J MR53V8052J-XXMA MR53V8052J-XXTP
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

PC MOTHERBOARD msi SERVICE MANUAL

Abstract: 16C550 82077AA CR01 CR02 FDC37N769 NS16C550
Contextual Info: FDC37N769 3.3V Super I/O Controller with Infrared Support for Portable Applications FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ 3.3 Volt Operation Intelligent Auto Power Management 16 Bit Address Qualification Optional 2.88MB Super I/O Floppy Disk Controller - Licensed CMOS 765B Floppy Disk Controller

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

PC2-5300U-555-12

Abstract: 5300U-555
Contextual Info: January 2007 HYS64T32400HU–3S–B HYS64T64400HU–3S–B HYS64T 32400H U – 3 . 7 – B HYS64T 64400H U – 3 . 7 – B 240-Pin unbuffered DDR2 SDRAM Modules DDR2 SDRAM UDIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.01 Internet Data Sheet HYS64T[32/64]400HU–[3S/3.7]–B

Contextual Info: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns

Contextual Info: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2

93c66

Abstract: 93C86 01XXXXXXXXX
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology

eiaj edr-7320

Abstract: 93c86v
Contextual Info: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles

csi 93c46vi

Abstract: csi 93c46 93c46vi 93c46li CSI 93C46LI 93c46v CSI 93C46L csi 93c46v 2106D 93c46 rotate
Contextual Info: CAT93C46 1K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION • High speed operation: 1MHz The CAT93C46 is a 1K-bit Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the

93C66S

Abstract: 93C66SI CAT93C57
Contextual Info: H EE GEN FR ALO CAT93C66 Die Rev. E 4K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 1MHz ■ Power-up inadvertant write protection ■ Low power CMOS technology ■ 1,000,000 Program/erase cycles ■ 1.8 to 6.0 volt operation

csi 93c46vi

Abstract: 93c46li csi 93c46 CSI 93C46LI 93c46vi CSI 93C46L csi 93c46v 24C168 93C46L CSI93C46LI
Contextual Info: CAT93C46 1K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION • High speed operation: 1MHz The CAT93C46 is a 1K-bit Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the

csi 93c46vi

Abstract: csi 93c46 93c46vi CSI 93C46LI 93c46li csi 93c46v CSI 93C46L 93C46L 93c46v 24C168
Contextual Info: CAT93C46 1K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION • High speed operation: 1MHz The CAT93C46 is a 1K-bit Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the

ST 93c86

Abstract: CAT93C86 93C86L CAT93C57
Contextual Info: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles

transistor BD 222 SMD

Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Contextual Info: ACT337 Rev 2, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant voltage, constant current CV/CC regulation without the need of an opto-coupler or reference

MAX714

Contextual Info: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read

AB28F200B5B80

Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time

29053

Contextual Info: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation