X1013 Search Results

ms8351

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)

MS8251

Abstract: P2613 schottky diodes Anti parallel P261
Contextual Info: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.) ● Cut-Off Frequency > 500 GHz

Contextual Info: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads

MS8150

Abstract: MS8150-P2613 P2613
Contextual Info: GaAs Schottky Devices Low RS Flip Chip TM MS8150 - P2613 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-off Frequency > 500 GHz ● Large Gold Bond Pads

Contextual Info: MISCELLANEOUS SOCKETS Relay & Zig-Zag Sockets 0,64 0,46 0,38 0,25 2,41 2,79 3,71 4,19 0,51 3,18 ● Relay sockets accept devices with I/O pins on 2,54 grid. ● Zig-Zag strip sockets are suitable for IC’s and memory chips with staggered double row patterns.

connector life testing

Abstract: 1565199-1 8Tel044 1565204-1 TC-ZIF TR1012 HDR connector connector with pcb mounts
Contextual Info: 認定試験報告書 Qualification Test Report TC-ZIF CONNECTOR ５０１―５７２０ 11-Jan-‘06 Rev.A 1 はじめに 1.1 目 的 本試験はTC-ZIF CONNECTOR 260極の、製品規格 108-5771 Rev.A に規定された性能必要条件に合致している

sd172

Abstract: sd172 photodiode
Contextual Info: SD 172-11-31-221 Red Enhanced Ultra Low Capacitance Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08]

Contextual Info: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation

Contextual Info: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads

UV 111A

Abstract: heidenhain power supply manual HEIDENHAIN HEIDENHAIN EnDat 2.1 rod+323+heidenhain
Contextual Info: Inverter Systems for HEIDENHAIN Controls Information for the Machine Tool Builder January 2015 HEIDENHAIN inverter systems The inverter systems from HEIDENHAIN are suitable for the HEIDENHAIN controls with digital speed control. They are designed for operating the synchronous and asynchronous

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

centronic osd100 6

Abstract: Q0320 OSD50-4T QD320-4 LD20-4T MD100-4T MD25-4T OSD100-4T OSD200-4T OSD300-4T
Contextual Info: CENTRONIC INC-, E-0 DIV HIE D • Silicon Photodetectors 1T3S2S0 0 0 0 0 3 b 2 s ICENB Series 4T T-M1-H7 Lower Cost Version of Series 4 The Series 4T photodetectors are a lower cost series offering good responsivity out to 1150 nm and low capacitance. They are restricted

centronic osd100 6

Abstract: MD25-3 LD20-3 MD100-3 OSD100-3 OSD200-3 OSD300-3 OSD50-3 QD100-3 QD320-3
Contextual Info: CENTRONIC INC-, E-0 DIV 41E J> • n i S a S O GQD03Sb 7 « C E N B Silicon Photodetectors ^''4.^745' Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)

VTB1012BI

Abstract: VTB1013BI
Contextual Info: StiE D BOBGbQi Q0Q1G3D IVCT SOT 'V ' 1 V T B 1 0 1 2 B I , 13BI VTB Process Photodiodes E G 8« 6 V A C T E C PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTIO N Small area planar silicon photodiode in a “flat" window, dual lead TO-46 pack­ age. The package incorporates an in­

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: A M O D ELS 10, 20, 30, 40, 50, 60 N TC Th erm istors COMPANY OF TECHNO C o a te d FEATURES • Small size - conformal coated • Wide resistance range • Available in 7 different R-T curves • Configured for standard P.C. board mounting or assembly in probes

Contextual Info: MLX90247 family Discrete Infrared Thermopile Detectors Features and Benefits Solid state thermopile sensor On-chip thermistor for ambient temperature compensation High reliability and long-term stability Low cost, small size Ordering Information Suffix Ta

Contextual Info: High Temperature Epoxy Encapsulating & Potting Compound 832HT Technical Data Sheet 832HT Description The 832HT High Temperature Epoxy Encapsulating and Potting Compound is an electronic grade epoxy designed for high temperature environments. It is also an ideal encapsulant for very chemically aggressive

x20100

Abstract: j303001 J3030 D20200 J603001 R-T curves 601002 M202003 D30100 U2080
Contextual Info: A MODELS 10. 20, 30, 40, 50, 60 NTC Therm istors COMPANY OF TECHNO Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 7 different R-T curves • Configured for standard P.C. board mounting or assembly in probes S T A N D A R D E L E C T R IC A L S P E C IF IC A T IO N S a n d D IM E N S IO N A L C O N F IG U R A T IO N S

2x4 RJ45 LED

Abstract: 810130 marking P12 transistor p11 marking J1
Contextual Info: INTEGRATED MODULAR JACK 10/100/1000 Gigabit Ethernet RJ45 2xN Port Options: 2x1, 2x4, 2x6, 2x8 Port Meets or exceeds IEEE 802.3 standard for 10/100/1000 Base-TX Suitable for CAT 5 & 6 Fast Ethernet Cable or better UTP Available with or without LEDs 350 uH minimum OCL with 8mA DC bias current

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.)

B5170-02

Contextual Info: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.

Contextual Info: Red Enhanced Ultra Low Capacitance Silicon Photodiode SD 172-11-31-221 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08]