X100 Search Results

XX1000-QT

Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT February 2007 - Rev 08-Feb-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

XX1007-QT

Abstract: XX1007-QT-0G00 XX1007-QT-0G0T XX1007-QT-EV1
Contextual Info: 13.5-17.0/27.0-34.0 GHz Doubler QFN, 3X3mm X1007-QT June 2008 - Rev 04-Jun-08 Features Integrated Gain, Doubler and Driver Stages Single Positive Supply, +5V Integrated Bypassing Capacitor +20.0 dBm Output Saturated Power 35.0 dBc Fundamental Suppression On-Chip ESD Protection

2Xf transistor

Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

X1007-QT

Contextual Info: 13.5-17.0/27.0-34.0 GHz Doubler QFN, 3X3mm X1007-QT September 2007 - Rev 14-Sep-07 Features Integrated Gain, Doubler and Driver Stages Single Positive Supply, +5V Integrated Bypassing Capacitor +20.0 dBm Output Saturated Power 35.0 dBc Fundamental Suppression

Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm May 2008 - Rev 30-May-08 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs

Contextual Info: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

Contextual Info: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD February 2008 - Rev 13-Feb-08 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 2,500 V -10,000 V Rectifiers X25UFG X50UFG X100UFG 100 mA - 250 mA Forward Current 100 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Vrwm I Co)

Contextual Info: 2,500 V -10,000 V Rectifiers X25SG X50SG X100SG 100 mA - 250 mA Forward Current 3000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part i Working Number Reverse Voltage Average Rectified Current Reverse Current

Contextual Info: ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number X25FG X50FG X100FG Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (lo) (Ir) (Vf) 1 Cycle Repetitive Reverse Recovery Surge Surge Current Current Time

ddr3

Abstract: 2gb ddr3 dram
Contextual Info: 請立即發佈 媒體連絡人: Kirstin Bordner 美光科技 +1-208- 368-5487 kbordner@micron.com 白培霖副總經理 南亞科技股份有限公司 +886-3-3281688 x1008 plpai@ntc.com.tw 南亞科技與美光共同推出 42 奈米 DRAM 製程技術 —

Contextual Info: PPS 16 R PPS 16 A R W = S oH Diélectrique CONDENSATEURS POLYPROPYLENE A ARMATURES METALLIQUES POLYPROPYLENE FILM-FOIL CAPACITORS CARACTERISTIQUES ELECTRIQUES Catégorie climatique Classe de stabilité Tg d à 1 kHz pour CR x1000 pF Tg d à 1 MHz pour CR ! 1000 pF

XX1007-BD

Abstract: tanaka TS3332LD DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka epoxy
Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD August 2007 - Rev 29-Aug-07 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

XX1001-QK

Abstract: XX1001-QK-0L00 XX1001-QK-0L0T XX1001-QK-EV1 07MAR07
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

BYT200PIV-400

Abstract: BYT200PIV400
Contextual Info: BYT200PIV-400 ULTRAFAST POWER RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x100 A VRRM 400 V VF (max) 1.4 V A1 K1 A2 K2 FEATURES AND BENEFITS n n n n 4 LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE :

XR-1488

Abstract: XR-494 XR-1489AP XR-1488N XR-1488P XR-1489A XR-1489AN XR-X100 1468CN
Contextual Info: EXAR I 3422618 EXAR 11 CORP D E| 3 M2 S b l ö G D D 477 D 91 D 04770 CORP XR-X100 Master-Chip Chip Size: 115 x 95 mils NPN Transistors Total Components: 293 Small Signal: 30 Bonding Pads: 18 High Current: 4 Max. Operating Voltage: 75V PNP Dual Collector

Contextual Info: 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm X1002QH February 2006 - Rev 22-Feb-06 Features Octave Bandwidth Operation +17 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply SMD, 4x4 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing

XX1007-QT

Abstract: XX1007-QT-0G00 XX1007-QT-0G0T XX1007-QT-EV1
Contextual Info: 13.5-17.0/27.0-34.0 GHz Doubler QFN, 3X3mm X1007-QT February 2008 - Rev 06-Feb-08 Features Integrated Gain, Doubler and Driver Stages Single Positive Supply, +5V Integrated Bypassing Capacitor +20.0 dBm Output Saturated Power 35.0 dBc Fundamental Suppression

100 pin wqfn

Contextual Info: Packing Name NEC Tray LA-014 100 pin WQFN A B Q D C K T S W 100 H U I M G E F J Z X100KW-65A-1 NOTE Each lead centerline is located within 0.06 mm 0.003 inch of its true position (T.P.) at maximum material condition. NEC CODE X100KW-65A-1 EIAJ CODE Weight (Reference Value)

Contextual Info: 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm X1002-QH May 2009 - Rev 20-May-09 Features Octave Bandwidth Operation +16.0 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 4x4 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing

Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2006 - Rev 16-Aug-06 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

P6062B

Contextual Info: Modular Oscilloscope Probes See cross-reference table for Tektronix equivalents Use with any scope Inexpensive repair - cable, BNC and probe head screw together in seconds XI, X10, X100 attenuation and switchable X1-X10 Bandwidths to 300 MHz Optional actuator pin for scopes