X-BAND LNA CHIP Search Results

RF3858

Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
Contextual Info: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31

LNA x-band

Abstract: TGA2600-EPU
Contextual Info: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates

L5 marking

Abstract: 800 mhz Cellular amplifier circuit diagram
Contextual Info: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

Contextual Info: AL P H A IN»/ S E M I C O N D U C T O R 33E D • OSfiSMHB Q D 0 1 0 2 1 D ■ ALP Ka-Band AA035L1-00 Monolithic LNA Features Description ■ ■ ■ ■ ■ Alpha’s AA035L1-00 is a Ka-band monolithic LNA chip that features an 0.25 x 200 micron MBE grown MESFET device. The gates are E-beam

CAP 0402

Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Contextual Info: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

Contextual Info: CMH192 Preliminary Datasheet ? High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process IF Out ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -9.0 to 0 dBm ? Operating voltage range: 2.7 to 4 V

Infineon CMH192 GaAs

Abstract: CMH192 mmic MIXER 210
Contextual Info: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm

Contextual Info: CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -9.0 to 0 dBm

PG311

Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm

k608

Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm

Contextual Info: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V

mmic c8

Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm

Contextual Info: Advance Product Information January 19,2001 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband

ka band lna

Abstract: 019 triquint TGA1319C
Contextual Info: Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.169 mm x .904 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband

RFFM6403PCBA-410

Abstract: RFFM6403
Contextual Info: RFFM6403 Preliminary 2.5V TO 4.2V, ISM Band, 1W, 405MHz to 475MHz Transmit/Receive Module Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm EN Integrated 50 Input/Output Match Tx Output Power: 30dBm Single 50 Bi-directional Transceiver Interface Integrated PA, filtering LNA

TGA2600

Abstract: TGA2600-EPU Ultra low noise amplifier triquint LNA
Contextual Info: TGA2600 X Band Ultra Low Noise Amplifier Key Features • • • • • • • • Product Description The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. The device features 30dB of gain across

TGA1319C-EPU

Abstract: ka band lna
Contextual Info: Advance Product Information June 14, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband

TGA1319C-EPU

Contextual Info: Advance Product Information November 6, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband

TGA1319C

Contextual Info: Product Data Sheet August 5, 2008 K Band Wideband LNA/Driver TGA1319C Key Features and Performance Chip Dimensions 2.179 mm x .847 mm • • • • • 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.5 dB Nominal Noise Figure midband 21 dB Nominal Gain

Contextual Info: RFFM6903 2.5V TO 4.2V, ISM BAND, 1W 915MHz TRANSMIT/RECEIVE MODULE Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm 24 23 22 GND 21 GND Integrated 50Ω Input/Output Match Tx Output Power: 30dBm Single 50Ω Bi-directional Transceiver Interface Integrated PA, filtering LNA

QFN-24 footprint

Abstract: CMOS LNA at 2.4 GHz DSB060829 RF3388 RF3388PCBA-410 2 GHz BJT rf 4 mm QFN
Contextual Info: RF33883.7 V, Dual-Band Front-End Module RF3388 Proposed 3.7 V, DUAL-BAND FRONT-END MODULE SW3 SW2 SW1 LNA EN NC Package Style: QFN, 24-Pin, 4 mm x 4 mm 23 22 21 20 19 24 BLUETOOTH Features „ „ 17 RX2.4- Single-Module Radio Front-End 16 RX5.0+ Single Supply Voltage 3.15 V to

HC3014

Contextual Info: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter • CHC3014 1 Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output