X 300 F Search Results

Contextual Info: Preliminary GS816019/33/37AT-300/275/250/225/200 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 300 MHz–200 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Byte Write and Global Write • 1.8 V or 2.5 V +10%/–10% core power supply

M116 CALOGIC

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300

SHT25

Abstract: PK-07-N LM 7902 SQT-01-MW-T
Contextual Info: ESQT-1XX-XX-XX-X-XXX-XXX-XX REVISION BI POSITION SPECIFICATION FIG 1 DO NOT SCALE FROM THIS PRINT LEAD STYLE SPEC No OF POS x .07874 [2.0000] + .0117 [.300]) -02: USE C-79-02-X -03: USE C-79-53-X .010 [.25] PLATING SPECIFICATION -F: FLASH SELECTIVE, 3 Au / 50 Ni MIN

t10-25 u2

Abstract: G2156 f10107
Contextual Info: Preliminary GS816273AC-300/275/250/225/200 300 MHz–200 MHz 256K x 72 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 209-Pin BGA Commercial Temp Industrial Temp Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

AK6321024

Abstract: AK63232Z AK63264
Contextual Info: Accutek Microcircuit Corporation AK63232Z 32,768 x 32 Bit CMOS / BiCMOS Static Random Access Memory DESCRIPTION The Accutek AK63232Z SRAM Module consists of fast high performance SRAMs mounted on a low profile, 64 pin ZIP Board. The module utilizes four 28 pin 32K x 8 SRAMs in 300 mil SOJ packages

m628032

Abstract: SOJ28 1370E
Contextual Info: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION

Contextual Info: UNCONTROLLED DOCUMENT SEE NOTE #3 I L1 D0 ELECTRICAL TESTING Z, R, X vs Fraquancy 3 8 Ìa. 600 TEST: Z 500 FREQUENCY NOMINAL MINIMUM 400 MAXIMUM 2002/95/EC 300 2 5 MHz 100 MHz 281 Q 211 Q 460 n 345 n Q - - Q - \\ E 200 - 100 r\ \ - V NOTE?- Uso'- 12 X 1 1 / 2

Contextual Info: SN74ALS232B 1 6 x 4 ASYNCHRONOUS FIRST IN, FIRST OUT MEMORY D3247 • Independent Asynchronous Inputs and Outputs DW OR N PACKAGE Package Options Include Plastic "Sm all O utline" Packages, Plastic Chip Carriers, and Standard Plastic 300-m il DIPs OE C TOP VIEW

Contextual Info: EEPROM AS8E512K8 512K x 8 EEPROM PIN ASSIGNMENT EEPROM Module Top View AVAILABLE AS MILITARY SPECIFICATIONS • • 32-Pin DIP & 32-Pin SOJ (CW) SMD 5962-93091 MIL-STD-883 FEATURES • • • • • • • • Access times of 150, 200, 250, and 300 ns

5962-8868101LA

Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
Contextual Info: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

STTH3003CW

Contextual Info: STTH3003CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 15 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 40 ns A2 K A1 FEATURES AND BENEFITS TO-247 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE

Contextual Info: TC0604 Supertex inc. Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ BV DSS/ R d s o n M a x b v dgs Q 1 + Q 2 or Q 3 + Order Number / Package SOW -20* 3.0Q 40V TC0604WG * Same as S 0-20 with 300 mil wide body.

Contextual Info: SPT 5x20 Pigtail Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse with Pigtail, 5.4 x 22.5 mm, Time-Lag T, H, 250 VAC, UL: 115 - 300 VDC IEC 60127-2 • 250 VAC · 300 VDC · Time-Lag T Description Applications - IEC Standard Fuse - H = High Breaking Capacity Ceramic Tube

a15 SMD

Abstract: SMD a7 S
Contextual Info: SRAM MT5C2564 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88681 • SMD 5962-88545 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A1 A0 NC Vcc NC 28-Pin LCC (EC) 3 2 1 28 27 FEATURES • • • •

smd marking A8

Contextual Info: SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

DIL 28

Abstract: soic 28
Contextual Info: MATRA M H S 4bE _ D ESI S ö b ß 4Sb QOODOn 2 OMMHS M E M O R IE S _ HIGH SPEED SRAMs PACKAGING FEATURES HM 65799 64 K x 4 Asynchronous Inputs TTL Compatible I/O E.S.D. protection > 2000 V 300 Mils Package Output Enable 73 VC C A* C 1 2 * c 3 20n

TLRA108A

Abstract: TLRA155BP TLOA156P led 3000 mcd TLRA134A TLRA190
Contextual Info: High-bright Red LED Lamp [Material: GaAgAs] Len s dia. mm Lens Red colored diffused 03.0 03.1 TLRA102A □ 2 .5 x 5 □ 1.7x2.5 70 110 TLRA108A T LR A 1 2 3 300 60 Red colored diffused T LR A 1 2 4 150 70 Feature Colorless clear T LR A 1 2 5 400 60 Milky white diffused

Contextual Info: Tem ic VN50300L/VN50300T S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number Min V V(BR)DSS V N 50300L i*DS(on) M a x ( Q ) I d (A ) 0.033 300 @ V qs = 10 V 1 to 4.5 0.022 Features Benefits • • • •

Contextual Info: FM600TU-07A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/75 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED

74ALS233

Contextual Info: S N 5 4 A LS 2 3 3 A , S N 7 4 A LS 2 3 3 A 1 6 x 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES D 2 8 7 6 . JA N U A R Y 1 9 8 6 - Package Options Include Plastic "Small Outline" Packages. Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs S N 54A LS 233A . . . J PACKAGE

6j5 tube

Abstract: TUBE 6J5 6j5gt 6J5GT tube 6J5G "6j5" 6j1 tube 6J56 6j5 general electric 6j1 electron tube
Contextual Info: 6J5.6J5GT TUMG-SOL •V TRIODE t- 1 ^ -* MAX MT8 2 * ' «. MAX 2*§* MAX. COATED UNIPOTENTIAL CATHODE HEATER 6 .3 VOLTS MA X 300 MA. AC OR DC METAL SHELL GLASS BULB ANY MOUNTING PO SITIO N S M A LL 6 P IM W A FE R OCTAL S M A LL W A FER 6 P I N OCTAL M ET AL S L E E V E

F5.5M

Abstract: LA3020
Contextual Info: = 87 = aüÄÄtew 6 K 4 £ m, m &. » « f e s a * X •%■ %. $ - & . 6 .3 V *rM & J3 E ~ i£ - 300±30m A 250 V P B ftfeiE (-) 10±3m A T O * * 100 V m /p ^ C ^ S .S m A - » « * * 68 Q s— re 2— irn s, m mm 3— 4— Ï Î & m w 4 . 4 ± 0 . 9 mA/ v

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

ACF451832-153T

Abstract: F451832-223-T F451
Contextual Info: FILTERS EMI ACF SERIES The ACF se r ie s is a T-type c ircu it f e r r ite ch ip EMI f il le r w ith ch ip -b ea d s a n d a m u ltila yer cera m ic c h ip ca p a cito r. When in s e r te d in a c ircu it w ith a sta b le GND, it h a s a g r e a t EMI s u p p re s s io n effect. They a ll a r e su ita b le f o r high d en sity su rfa ce mounting.