X 2761 Search Results

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth

CY7C11681KV18

Abstract: 3M Touch Systems
Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth

3M Touch Systems

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth

3M Touch Systems

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth

NT4GC72B4NA1NL-BE

Abstract: nanya 8gb DDR3 DIMM NT8G NT4GC72B4NA1NL m/NT2GC72B8PA0NL-CG
Contextual Info: NT1GC72B89A0NL / NT2GC72B8PA0NL NT4GC72B4NA1NL / NT8GTC72B4NA1NL 1GB: 128M x 72 / 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx8 1GB/2GB / 256Mx4 (4GB) / 512Mx4 (DDP) (8GB) SDRAM A-Die

3M Touch Systems

Contextual Info: CY7C12461KV18, CY7C12571KV18 CY7C12481KV18, CY7C12501KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 36-Mbit Density (4M x 8, 4M x 9, 2M x 18, 1M x 36) ■ 450 MHz Clock for High Bandwidth ■

CY7C12481

Abstract: CY7C12501 3M Touch Systems
Contextual Info: CY7C12461KV18, CY7C12571KV18 CY7C12481KV18, CY7C12501KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 36-Mbit Density (4M x 8, 4M x 9, 2M x 18, 1M x 36) ■ 450 MHz Clock for High Bandwidth ■

CY7C12481

Contextual Info: CY7C12461KV18, CY7C12571KV18 CY7C12481KV18, CY7C12501KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 36-Mbit Density (4M x 8, 4M x 9, 2M x 18, 1M x 36) ■ 450 MHz Clock for High Bandwidth ■

Contextual Info: CY7C12461KV18, CY7C12571KV18 CY7C12481KV18, CY7C12501KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 36-Mbit Density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

3M Touch Systems

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

k 2761

Abstract: 2761 l 2761 i DSC-2050
Contextual Info: CMOS PARALLEL SyncFlFO CLOCKED FIFO 512 x 18-BIT & 1024 x 18-BIT IDT72215L IDT72225L Integrated Device Technology, Inc. FEATURES • • > • • • • • • 512 x 18-bit and 1024 x 18-bit memory array structures 20ns read / write cycle time Easily expandable in width

Contextual Info: CMOS PARALLEL SyncFlFO CLOCKED FIFO 512 x 18-BIT & 1024 x 18-BIT IDT72215L IDT72225L Integrated Device Technology, Inc. FEATURES • • • • • • • • • 512 x 18-bit and 1024 x 18-bit memory array structures 20ns read / write cycle time Easily expandable in width

Contextual Info: i" &;< CMOS PARALLEL SyncFIFO CLOCKED FIFO 5 1 2 X 18-BIT & 1024 X 18-BIT FEATURES • • • • • 512 x 18-bit and 1024 x 18-bit memory array structures 20ns read / write cycle time Easily expandable in width Read and write clocks can be independent or coincident

Contextual Info: CMOS PARALLEL SyncFlFO CLOCKED FIFO 512 x 18-BIT & 1024 x 18-BIT FEATURES • • • • • • • • • 512 x 18-bit and 1024 x 18-bit memory array structures 20ns read / write cycle time Easily expandable in width Read and write clocks can be independent or coincident

27C408

Abstract: 27C308-41
Contextual Info: Drive modules 31/2 Љ drive modules Fixing plate 1 Mounting variants Fixing plate 2 Height Fixing plate 3 Width Section mm Section inch Remarks Part No. 3U 8HP 26 x 102 mm 1.02 x 4.01Љ Fixing plate 1 27-308-41 3U 8HP 26 x 102 mm 1.02 x 4.01Љ Fixing plate 2

PH-012

Abstract: A3046EU GH-032 72* hall IC 3 pole A3056EU A3058EU A3058LU GH-033 ignition timing GH-035
Contextual Info: Data Sheet 27612A‡ 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED X X The six devices differ only in their magnetic switching values and operating temperature ranges. The low hysteresis of the A3046/56EU and A3046/56LU makes them perfectly suited for ABS anti-lock brake

ABS Wheel Speed Sensor

Abstract: A3046EU A3056EU A3058EU A3058LU current measurement using hall effect sensor
Contextual Info: Data Sheet 27612A† 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED X X The six devices differ only in their magnetic switching values and operating temperature ranges. The low hysteresis of the A3046/56EU and A3046/56LU makes them perfectly suited for ABS anti-lock brake

Contextual Info: 2 3 5 Pos i t i on — 19 position 7 6 7 > 5 : 0,1 0,05 siiite Re i he row 8 / *0,1 -0,3 d X 5:1 2 , 8 ± o,2 & CM X X i_ n Re i he row 37,9* 0.1 •05 X X Z V 18x 2 =36 ON i_ n IF 11,35 ±0,05 1 3 , 8 ±0,05 m in . 0 , 7 6/zm (30/iin) Au ub er/o ver min. 1 , 27/xm (50/iin) Ni

hall effect sensor 4 pin 452

Abstract: Hall Effect 3 pin ugn ABS Wheel Speed Sensor 3058 A3046EU A3056EU A3058EU A3058LU hall effect sensor ignition
Contextual Info: 3046, 3056, AND 3058 Data Sheet 27612A* 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED HALL EFFECT GEAR-TOOTH SENSORS–ZERO SPEED X 1 2 3 GROUND OUTPUT CC SUPPLY V X The A3046EU/LU, A3056EU/LU, and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in

ABS Wheel Speed Sensor

Abstract: A3046EU A3056EU A3058EU A3058LU hall switch ignition SENSOR HALL 452 ALLEGRO MAGNETIC POSITION SENSOR U PACKAGE allegro 3 PIN hall effect sensor
Contextual Info: Data Sheet 27612A‡ 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSOR ICS –ZERO SPEED X X 1 2 3 GROUND OUTPUT T C U D O n g R i y l s P On de The six devices differ only in their magnetic switching values and operating temperature ranges. The low hysteresis of the A3046/56EU