WTC2306 Search Results

WTC2306 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
WTC2306		Weitron	N-Channel Enhancement Mode Power MOSFET	Original	PDF	463.91KB	6
WTC2306A		Weitron	N-Channel Enhancement Mode Power MOSFET	Original	PDF	430.61KB	6

WTC2306 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
n-channel mosfet SOT-23 3a Abstract: WTC2306 g2ns Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2306 OT-23 OT-23 Curre1000 13-May-05 n-channel mosfet SOT-23 3a WTC2306 g2ns	PDF
2306a Abstract: D26A sot-23 Marking DL WTC2306A Contextual Info: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	WTC2306A OT-23 OT-23 13-May-05 2306a D26A sot-23 Marking DL WTC2306A	PDF
Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.8 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement	Original	WTC2306 OT-23 OT-23 08-Apr-2013	PDF
Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE * “G” Lead Pb -Free 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V Rugged and Reliable	Original	WTC2306 OT-23 OT-23 13-May-05	PDF
5.8A N-CHANNEL MOSFET 25V SOT23 Abstract: rl27 WTC2306 MOSFET N-Channel 1a vgs 1.2v sot-23 VGEN-10V N06 MOSFET Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.8 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement	Original	WTC2306 OT-23 OT-23 17-Aug-09 5.8A N-CHANNEL MOSFET 25V SOT23 rl27 WTC2306 MOSFET N-Channel 1a vgs 1.2v sot-23 VGEN-10V N06 MOSFET	PDF
Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2306 SC-59 13-May-05 SC-59 26-Nov-08	PDF
Contextual Info: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	WTC2306A SC-59 SC-59 13-May-05 26-Nov-08	PDF
Contextual Info: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V Rugged and Reliable	Original	WTC2306A OT-23 OT-23 13-May-05	PDF