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    WT2301 Search Results

    WT2301 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    WT2301
    		Weitron Surface Mount P-Channel Enhancement Mode MOSFET Original PDF 144.93KB 6
    WT-2301
    		Weitron Surface Mount P-Channel Enhancement Mode MOSFET Original PDF 144.93KB 6
    SF Impression Pixel

    WT2301 Price and Stock

    Panduit Corp

    Panduit Corp WT23014D04

    ROHS PCB,PDM CONTROL RPLCS:
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    Panduit Corp WT23018D01

    ASSY,VALVE STACK*PDM
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    DigiKey WT23018D01 Bulk 1
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    Sager WT23018D01 1
    • 1 $650.17
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    Panduit Corp WT23013C01

    BIN,COLLECTION RFQ #96
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    DigiKey WT23013C01 Bulk 1
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    Sager WT23013C01 1
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    Panduit Corp WT23010D03

    COVER,DISPENSER RFQ#9875RPLCS:
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    DigiKey WT23010D03 Bulk 1
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    Panduit Corp WT23017D01

    ASSY,CON BLK *PDM
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    DigiKey WT23017D01 Bulk 1
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    Avnet Americas WT23017D01 Bulk 1
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    Onlinecomponents.com WT23017D01
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    Sager WT23017D01 1
    • 1 $625.87
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    Find more WT2301 price and stock on Findchips.com

    WT2301 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		WT-2301 OT-23 OT-23 PDF

    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		WT-2301 OT-23 OT-23 PDF

    MOSFET 2301

    Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V


    Original     		WT-2301 OT-23 OT-23 MOSFET 2301 s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking PDF