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    WT SOT23 Search Results

    WT SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BAV99
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    TBAV70
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAS16
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAW56
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV70
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    SF Impression Pixel

    WT SOT23 Price and Stock

    Nexperia

    Nexperia PDTA144WT,215

    Digital Transistors SOT23 50V .1A PNP RET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PDTA144WT,215 Reel 39,000
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    Nexperia PDTC144WT,215

    Digital Transistors SOT23 50V .1A NPN RET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PDTC144WT,215 Reel 39,000
    • 1 -
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    WT SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Packing Details Pkg. Std. Pack Net Wt. Inner Carton Q ty /ln re r Outer Carton Box Size Carton Box Size No. of Inner Cartons per Outer Carton C apa city/ O uter Carton Gross Wt. 10 x 3.5" x 3.5" 5K 12.7" x 12.7" x 20 25 125K 25 kgs 3.75 kg/2500 pcs 10 :< 3.5" x 3.5"


    OCR Scan     		DO-35 DO-41 O-126 T0-220 OT-23 kg/5000 kg/2500 kg/100 gm/1000 gm/500 PDF

    2SA1020GP

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)


    Original     		2SA1020GP OT-23 OT-23) 100mS* 2SA1020GP PDF

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1020PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)


    Original     		2SA1020PT OT-23 OT-23) 100mS* PDF

    SIEMENS BB409

    Abstract: bb409
    Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/


    OCR Scan     		fi23SbOS BB419 OD-123 BB409 BB439 OD-323 BB512 BB515 SIEMENS BB409 bb409 PDF

    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		WT-2301 OT-23 OT-23 PDF

    WT3401

    Abstract: WT-3401
    Contextual Info: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable


    Original     		WT-3401 OT-23 OT-23 WT3401 WT-3401 PDF

    WT2307

    Abstract: WT-2307
    Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable


    Original     		WT-2307 OT-23 OT-23 WT2307 WT-2307 PDF

    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		WT-2301 OT-23 OT-23 PDF

    2306 mosfet

    Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
    Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package


    Original     		WT-2306 OT-23 OT-23 2306 mosfet s1815 WT2306 WT-2306 wt2306s06 wt sot23 PDF

    Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


    Original     		WT-2307 OT-23 OT-23 PDF

    Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V


    Original     		WT-2306 OT-23 OT-23 PDF

    Contextual Info: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V


    Original     		WT-3401 OT-23 OT-23 PDF

    Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V


    Original     		WT-2300 OT-23 OT-23 PDF

    WT3402

    Abstract: WT-3402
    Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 4.6 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable *SOT-23 Package


    Original     		WT-3402 OT-23 OT-23 WT3402 WT-3402 PDF

    Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V


    Original     		WT-2300 OT-23 OT-23 PDF

    Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 4.6 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V


    Original     		WT-3402 OT-23 OT-23 PDF

    Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V


    Original     		WT-2306 OT-23 OT-23 PDF

    Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


    Original     		WT-2307 OT-23 OT-23 PDF

    MOSFET 2301

    Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
    Contextual Info: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V


    Original     		WT-2301 OT-23 OT-23 MOSFET 2301 s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking PDF

    Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 4.6 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable


    Original     		WT-3402 OT-23 OT-23 PDF

    MOSFET N-Channel 1a vgs 0.9 sot-23

    Abstract: WT2300 WT-2300 diode ja
    Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS ON R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V


    Original     		WT-2300 OT-23 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 WT2300 WT-2300 diode ja PDF

    EL215

    Abstract: ic cir 2262 RTA 2258
    Contextual Info: EL2150C/EL2157C 125 MHZ Siftglß Supply, Clamping Op A ffips HIGH PEBFORMAMCE ANÀtÛG WTÉSRATED CfflCUtîS G e n e r a l D e s c r ip t io n T he EL2150C/EL2157C are th e electronics in d u stry ’s fastest single supply op am ps available. P rio r single supply op am ps


    OCR Scan     		EL2150C/EL2157C EL2157C) 75V/fxs 800e-18 810e-18 EL2150C /EL2157C EL215 ic cir 2262 RTA 2258 PDF

    Contextual Info: 8W SOT-23-5 M5 TO-92 (Z) MSOP-8 MM-8 (MM) SO-8 (M) DIP-8 (N) SOT-223 (S) TO-263 (U) TO-220 (T) TO-247 (WT) Designing With LDO Regulators Micrel Semiconductor 9W 7W 6W 5W 4W 3W 2W 1W Designing With LDO Regulators 17 Section 2: Design Charts The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst


    Original     		O-247 O-220 O-263 OT-223 OT-23-5 OT-143 O-220 PDF

    Contextual Info: o TO-247 WT o TO- in CO W) u P3 CIh SOT-22Ì (S) G o • 1-H P3 • l-H <Z) cn DIP-8 <N) <y SO-8 (M) o c - MSOP-8 M M -8 'MM i SOT-23-5 (M5) SOT-143 (M4) 00 CD LO CO 3 s X P3 TO-92 (Z) Gì S ro i <N £ •I Uh CM The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst


    OCR Scan     		O-247 OT-22Ì OT-23-5 OT-143 O-220 PDF