WIDEBAND 28 Search Results

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

thermocouple gaas

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

hatching machine

Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Contextual Info: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts

hatching machine

Abstract: A113 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1
Contextual Info: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

4000 watts power amplifier circuit diagram pcb l

Abstract: MW4IC2020GMBR1 MW4IC2020MBR1 TLX8-0300 25C2923
Contextual Info: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

Wideband Synthesizer

Abstract: WHSS00120 WHSS20180
Contextual Info: Wideband High Speed Synthesizer 0.01 to 18GHz The content of this specification may change without notification 1/28/10 Coaxial Wideband High Speed Synthesizer 0. 01 to 18GHz Wideband High Speed Synthesizers F latn ess Harmo nic s Freq. St ep Po w er R ang e

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip

*1452a

Abstract: MKT3 1452a
Contextual Info: B U R R -B R O W N OPA3681 1 K Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 • WIDEBAND INA • UNITY GAIN STABLE: 280MHz (G = 1) • • • • • • • • •

3332-G

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband

A113

Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station

BFQ67W

Abstract: PMBT3640 PMBTH10 BFM520
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE

A113

Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station

PTMA080152M

Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

PTMA080152M

Abstract: RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K
Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband