WIDEBAND 28 Search Results

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

thermocouple gaas

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN

hatching machine

Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Contextual Info: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts

Contextual Info: B U R R -B R O W N « E OPA3681 ] Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable S' FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 WIDEBAND INA • BROADBAND VIDEO BUFFERS UNITY GAIN STABLE: 280MHz (G = 1) • HIGH OUTPUT CURRENT: 150mA

Wideband Synthesizer

Abstract: WHSS00120 WHSS20180
Contextual Info: Wideband High Speed Synthesizer 0.01 to 18GHz The content of this specification may change without notification 1/28/10 Coaxial Wideband High Speed Synthesizer 0. 01 to 18GHz Wideband High Speed Synthesizers F latn ess Harmo nic s Freq. St ep Po w er R ang e

*1452a

Abstract: MKT3 1452a
Contextual Info: B U R R -B R O W N OPA3681 1 K Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 • WIDEBAND INA • UNITY GAIN STABLE: 280MHz (G = 1) • • • • • • • • •

A113

Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station

BFQ67W

Abstract: PMBT3640 PMBTH10 BFM520
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE

atc100a150

Abstract: power transistor gan s-band
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

100B120JP500X

Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a

philips ferrite 4b1

Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: PTMA080152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the 700 to 1000 MHz frequency range. It is offered in a 20-lead thermally-enhanced overmolded package for cool

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.

transistor 341 20P

Abstract: 8275 interfacing
Contextual Info: MC13155 Wideband FM IF The MC13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This device may be cascaded for higher IF gain and extended Receive Signal Strength Indicator RSSI range.