WEITRON TECHNOLOGY Search Results

MJE13003B

Contextual Info: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching

Contextual Info: WT-264 Series 0606 TOP -Emitting Bicolor 0606 1615 Product Specifications Product WT-264UR/YG WT-264SD/YG WT-264Y/YG WT-264D/YG WT-264USD/UYG WT-264UY/UYG WT-264UD/UYG WT-264USD/NB WT-264UY/NB WT-264UD/NB WEITRON http://www.weitron.com.tw Emission Color

Contextual Info: WT-122 Series 0603 Product Specifications Product Emission Color Technology Test Current Luminous Intensity IF (mA) IV (mcd) Forward Voltage VF (V) Orderable Part Number WT-122YG Yellow Green GaP 20 20 typ 2.2 typ WT-122YG-ZZZZ WT-122Y Yellow GaAsP 20 8 typ

2N60F

Contextual Info: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

Contextual Info: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃

DSS SOT23

Abstract: SOT N45 marking N45
Contextual Info: WTC4501 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3.2 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 SOURCE Features: * Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive.

Contextual Info: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V

DFN16

Contextual Info: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz

Contextual Info: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz

Contextual Info: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability

Contextual Info: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability

WOSD12

Abstract: 5D marking 30KV WOSD03 WOSD05 820s
Contextual Info: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability

Contextual Info: WSR05 LOW CAPACITANCE DIODE ARRAY P b Lead Pb -Free DESCRIPTION: TRANSIENT VOLTAGE SUPPERSSORS 5.0 VOLTS WSR05 are surge rated diode arrays designed to protect high speed data components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge),

BAS516

Abstract: SC79
Contextual Info: BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits.

30KV

Abstract: WOSD03 WOSD05 WOSD12
Contextual Info: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability

5A SOD323

Abstract: WOSD03 WOSD05 WOSD12
Contextual Info: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes * “G” Lead Pb -Free FEATURES *Low Leakage Current *300 Watts Peak Power Protection(tp=8/20 uS) *Excellent Clamping Capability *Transient Voltage Suppressors Encapsulated in a SOD-323 Package *Small Package for use in Portable Electronics

ESD5V0B

Contextual Info: ESD5V0B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)

Contextual Info: ESD0502B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)

Contextual Info: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)

ESD3305B6E

Contextual Info: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)

Contextual Info: WT- 206DV06 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy. Back side:Gold Layer.

Contextual Info: WT-106DP14 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side:Gold Layer(Cathode).

3.2 v zener diode

Abstract: 105um DIODE ZENER X
Contextual Info: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: WT-106DN09 A Zener Diode Chips for ESD Protection 1. Feature: 1-1 This specification is suitable for N/P zener single-direction structure chips use. 2. Structure: 2-1 Paralleled the LED 2-2 Unity pad metal (one wire bonding applied only) 2-3 One-way Zener diode protection