WDFN6 Search Results

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AZ−01 ISSUE A DATE 25 APR 2006 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM

SC-70-6 package

Abstract: ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance
Contextual Info: AND8345/D WDFN6 2x2 mCoolt 506AN Dual MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe ON Semiconductor APPLICATION NOTE Introduction Figure 3 depicts a minimum recommended pad pattern that confines an improved thermal area of drain connections

mosfet rqa 130

Abstract: 6pin 2x2 dfn 506AP 2x2 dfn wdfn6 ladder network thermal
Contextual Info: AND8380/D WDFN6 2x2 mCool] 506AP Single MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com APPLICATION NOTE Prepared by: Anthony M. Volpe ON Semiconductor Introduction the contact area of the exposed source to include Pin 4

E2 liu

Abstract: wdfn6 506AN
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN−01 ISSUE E DATE 20 AUG 2010 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.

microdot Application Note

Abstract: marking 2x marking L2 diode marquis microdot 511bj marking L2 15x15
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.5x1.5, 0.5P CASE 511BJ−01 ISSUE B DATE 06 JUL 2010 SCALE 4:1 D L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED

marking code EE

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.2x1.0, 0.4P CASE 506AS−01 ISSUE C DATE 30 JUN 2008 SCALE 4:1 D L A B L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED

506AP

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B DATE 26 APR 2006 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM

NCP700BSN18T1G

Abstract: NCP700BSN30T1G transistor tip 3005 marking ADQ NCP700bsn33t1g
Contextual Info: NCP700B 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700B is 200 mA LDO that provides the engineer

Contextual Info: CAT6242 1.3 Amp CMOS LDO Voltage Regulator Description The CAT6242 is a low dropout CMOS voltage regulator providing up to 1300 mA of output current with fast response to load current and line voltage changes. CAT6242 has a fixed output voltage that is factory programmable to a level between 1.1 V and 4.1 V with steps of

NTLJD3119CTAG

Abstract: NTLJD3119C NTLJD3119CTBG
Contextual Info: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package

506AP

Abstract: NTLJS3113P NTLJS3113PT1G
Contextual Info: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package

506AP

Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
Contextual Info: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

Contextual Info: NCV8705 500 mA, Ultra-Low Quiescent Current, IQ 13 mA, Ultra-Low Noise, LDO Voltage Regulator The NCV8705 is a low noise, low power consumption and low dropout Linear Voltage Regulator. With its excellent noise and PSRR specifications, the device is ideal for use in products utilizing RF

Contextual Info: RT9013 Preliminary 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator General Description The RT9013 is a high-performance, 500mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding

Contextual Info: RT9198 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator General Description Features The RT9198 is designed for portable RF and wireless applications with demanding performance and space requirements. The RT9198 performance is optimized for battery-powered systems to deliver ultra low noise and

Contextual Info: RT9013 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator General Description The RT9013 is a high-performance, 500mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding

Contextual Info: RT9728A 120mΩ Ω, 1.3A Power Switch with Programmable Current Limit General Description Features The RT9728A is a cost effective, low voltage, single P-MOSFET high side power switch IC for USB application with a programmable current limit feature. Low switch-on

Contextual Info: NCV8705 500 mA, Ultra-Low Quiescent Current, IQ 13 mA, Ultra-Low Noise, LDO Voltage Regulator The NCV8705 is a low noise, low power consumption and low dropout Linear Voltage Regulator. With its excellent noise and PSRR specifications, the device is ideal for use in products utilizing RF

NIS1050MNTBG

Abstract: NIS1050 6x fet
Contextual Info: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power

Thx201

Abstract: OB2268 OB2262 PA3004 dvd player smps SG6848 SG6841 ld7552 cross reference ob2278 sot-26 pwm controller
Contextual Info: Orister Products Quick Reference Update：2007/9/10 Family Linear Regulators Part No. Package RS1117 SOT-223 TO-252 SOT-89 RS9173 PSOP-8 RS9172 PSOP-8 RS7805 TO-252 TO-220 RS78L05 SOT-89 TO-92 RS431 SOT-23 TO-92 RS6513 SOP-8 DIP-8 AX1509 SOP-8 DIP-8 AX2596

marking code d5g

Abstract: SOT-353 MARKING vn NCP508SQ15T1G NCP508MT15TBG
Contextual Info: NCP508 Very Low Noise, Fast Turn On, 50 mA Low Dropout Voltage Regulator Very Low Noise at 39 mVrms without a Bypass Capacitor High Ripple Rejection of 70 dB at 1 kHz Low Dropout Voltage of 140 mV typ at 30 mA Tight Load Regulation, typically 6 mV for DIout = 50 mA

Contextual Info: EMI2180 Common Mode Filter with ESD Protection Functional Description The EMI2180 is an industry first Common Mode Filter tuned to MHL speed CMF with integrated ESD protection. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package, instead of using separate devices for each

NLAS5123

Abstract: NLAS5123MNR2G NLAS5123MUR2G
Contextual Info: NLAS5123 SPDT, 1 W RON Switch The NLAS5123 is a low RON SPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS5123 can handle a balanced microphone/

Contextual Info: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package