WDFN 3 Search Results

Contextual Info: NTLJS3A18PZ Power MOSFET −20 V, −8.2 A, mCoolt Single P−Channel, 2.0x2.0x0.8 mm WDFN Package Features • WDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile WDFN 2.0x2.0x0.8 mm for Board Space Saving Ultra Low RDS(on)

Contextual Info: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package

schottky diode 46

Abstract: NTLJF4156N NTLJF4156NT1G NTLJF4156NTAG
Contextual Info: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction

ntljs4114nt1g

Abstract: 506AP NTLJS4114N
Contextual Info: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package

NTLJD4116

Abstract: NTLJD4116N NTLJD4116NT1G
Contextual Info: NTLJD4116N Power MOSFET 30 V, 4.6 A, mCoolt Dual N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package

NTLJD3119CTAG

Abstract: NTLJD3119C NTLJD3119CTBG
Contextual Info: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package

506AP

Abstract: NTLJS3113P NTLJS3113PT1G
Contextual Info: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package

Contextual Info: NTLJD3183CZ Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package

PF7004

Abstract: 6x fet NTLJD2104PTAG NTLJD2104PTBG NTLJD2104P
Contextual Info: NTLJD2104P Power MOSFET −12 V, −4.3 A, mCOOLE Dual P−Channel, 2x2 mm, WDFN package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package

NTLJF3118N

Abstract: NTLJF3118NTAG NTLJF3118NTBG
Contextual Info: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • • V BR DSS Excellent Thermal Conduction

506AP

Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
Contextual Info: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

NTLJD4150P

Abstract: NTLJD4150PTBG
Contextual Info: NTLJD4150P Power MOSFET −30 V, −3.4 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile < 0.8 mm for Easy Fit in Thin Environments

Contextual Info: NTLLD4951NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN 3 mm x 3 mm Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

14 pin mobile phone camera pinout

Abstract: N098E marking n098e N098 4X16 lcd display
Contextual Info: CM1409 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1409 is a family of pi−style EMI filter arrays with ESD protection, which integrates either six or eight filters C−R−C in a small form factor, WDFN 0.50 mm pitch package. The CM1409 has

N31E

Abstract: WDFN 14 pin mobile phone camera pinout
Contextual Info: CM1431 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1431 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−R−C in small form factor WDFN 0.40 mm pitch packages. The CM1431 has

Contextual Info: PAM2319 EVB User Guide PAM2319 WDFN EV Board User Guide AE Department 1. Revision Information Date 2011/08 Revision V1.0 Description Initial Release Comment 2. PAM2319 General Description The PAM2319 is a dual step-down current-mode, DC-DC converter. At heavy load, the constant frequency

Contextual Info: NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, mCoolt Single P−Channel & Schottky Barrier Diode, ESD Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package

14 pin mobile phone camera pinout

Abstract: n60e WDFN-8 2x2
Contextual Info: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter

Contextual Info: NTLLD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN 3 mm x 3 mm http://onsemi.com V(BR)DSS RDS(ON) MAX Q1 Top FET 30 V 17.4 mW @ 10 V Q2 Bottom FET 30 V 13.3 mW @ 10 V Features •

CM1241

Abstract: CM1241-04D4 WDFN8 change over circuit in hv DIODE marking LV
Contextual Info: CM1241 4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features http://onsemi.com • 3 Channels of Low Voltage ESD Protection • 1 Channel of High Voltage ESD Protection • Provides ESD Protection to IEC61000−4−2 Level 4: • • • •

n368e

Abstract: N368F N368
Contextual Info: CM1436 4-, 6- and 8-Channel EMI Filter Arrays with ESD Protection Product Description The CM1436 is an EMI filter array with ESD protection, which integrates either four, six or eight pi filters C−R−C . Each CM1436 filter has component values of 15 pF − 200 W − 15 pF. These parts

14 pin mobile phone camera pinout

Contextual Info: CM1430-08DE LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1430 is a pi−style EMI filter array with ESD protection that integrates eight filters C−R−C in a small form factor TDFN 0.40 mm pitch package. The CM1430 has component values of 8.5 pF − 100 W