WB1 99 Search Results

Contextual Info: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and

TK 69 TSOP

Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

mitsubishi cdram

Abstract: M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P -1 0 ,-1 2 ,-1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M 5 M 4 V 1 6 1 6 9 T P is a 1 6 M -b it Cached DRAM which integrates input registers, a 1 0 4 8 5 7 6 - w ord by 1 6 - bit

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024

Contextual Info: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P - 1 0 ,- 1 2 ,- 1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1048576-word by 1 6 - bit

8x16s

Abstract: 1kx16 AD-011M ac45 M5M4V16169TP-10 m5m4v16
Contextual Info: v ^ EV 2 2 MITSUBISHI LSls M5M4V16169TP-10,-12,-15 16MCDRAM:16M 1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM DESCRIPTION 1. 2. The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a

weller soldering station

Abstract: weller soldering sp23lk SP23L WP35 Weller Electronics
Contextual Info: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 Visit us at www.TestEquipmentDepot.com Soldering Guns & Irons n Table Top & Micro Torches n Weller has been the leading brand in professional-quality soldering equipment since 1945. In addition to its famous irons and

LR38603

Abstract: IR3Y48A1 sharp lr38603 LR36685 P-LQFP080-1212 LR386 CCD matrix 17mA 00H-DCH
Contextual Info: BACK LR38603 Digital Signal Processor for Color CCD Cameras LR38603 DESCRIPTION The LR38603 is a CMOS digital signal processor for color CCD video camera systems of 270 k/320 k/ 410 k/470 k-pixel CCDs with complementary color filters. The video camera system consists of

510H CCD

Abstract: ccd1 S5C7520X01 22 pin ccd co2 sensor circuit wb1 99 S5C7320X01 S5C7320X01-T0R0 luminance sensor KS7320
Contextual Info: S5C7320X01 DATA SHEET PRODUCT SUMMARY 100-TQFP-1414 INTRODUCTION S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC and surveillance cameras, and outputs combined video signals. It also runs algorithms for AE/AWB and transmits them to MICOM, or carries out AE/AWB independently.

tva0300n07

Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Contextual Info: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,

WP1F

Abstract: CMOS blemish specification QCIF LR38630 LZ34C10
Contextual Info: LR38630 Digital Signal Processor for CIF CMOS Image Cameras LR38630 DESCRIPTION The LR38630 is a CMOS digital signal processor for color camera systems of 110 k-pixel CMOS image sensor with primary color mosaic filters. The camera system consists of CIF CMOS image

Contextual Info: Cordless Soldering Tool Self Igniting Kit Contains: Tool with soldering tip, mini blow torch tip,hot knife tip, hot air tip and deflector, sponge and tray, storage case with tool holder, and instructions 99 Washington Street Melrose, MA 02176 Phone 781-665-1400

WB1 SOT23

Abstract: WB2 SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

LR38627

Abstract: CIRCUIT diagram LR38627 WN02H RNG12 sharp linear ccd 5000 bit 24LC04B M24C04 0 to 20ma converted into 0 to 5v with useing ic CH451 CIRCUIT diagram tv sharp 21 BG 12
Contextual Info: Technical Manual Digital Signal Processing LSI for CCD LR38627 Ver. 0.42 Published in Feb 2007 * Specifications of the product covered herein may be subject to change without notice. General Precautions This document and the product covered herein are protected by international copyright and proprietary right laws.

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

WB1 SOT23

Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

WP1F

Abstract: BLC 902 IR3Y38M CQ 229 CIRCUIT diagram tv sharp 21 BG 12 lw 293 SHARP camera CIF LR38630 LZ34C10 I04M
Contextual Info: SHARP LR 3 8 6 3 0 S P E C I S S U E T o No. EL109139 : Septem ber 30, 1998 ;_ SPEC I F I CAT I ONS Product Type Model No. DIGITAL SIGNAL PROCESSOR FOR CIF CMOS-IMAGER CAMERA LR38630 ^?This specification contains 39 pages including the cover and appendix.

u1 voltage regulator

Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

capacitor 0805 avx

Abstract: Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080 MRF9080LSR3 MRF9080R3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

MICRON diode 2u

Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
Contextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES