WB1 060 Search Results

TS05XXW3

Abstract: TS0500 marking code wb1 TS05XX ts0506 TS0507 EMC TS-050
Contextual Info: ATTENUATORS THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film Impedance: 50 Q element on an alumina ceramic substrate with solderable terminals Operating Temperature: -55°C to +150°C

ts0505

Abstract: marking code wb1 mw 772 TS05XXW1 TS05XXW3 ts0506 TS0503 TS05 TS0518 TS0509
Contextual Info: Attenuators Introduction Features • Substrate - Alumina • Power Rating - 0.1 to 2 Watts • Frequency Range DC to 18 GHz • Tape and Reel Packaging Available • VSWR under 1.50:1 • Variety of Chip Sizes • Attenuation Values from 1 to 20 dB in 1 dB increments; consult the factory

Contextual Info: THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the

ts0505

Abstract: ts0506 TS03XX
Contextual Info: ATTENUATORS gg THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the

TS03XXW3

Contextual Info: Features • Substrate - A lum ina • P ow er R ating - 0 .1 to 2 W atts • Frequency R ange D C to 18 GHz • Tape and Reel P ackaging A vailable • V SW R under 1.50:1 • V ariety o f Chip Sizes • A ttenuation Values fro m 1 to 20 dB in 1 dB increm ents; consu lt the fa cto ry

ts05

Abstract: TS05XX
Contextual Info: EZ2 TS05 Chip Technology A ttenuators EMC Technology's TS05 chip attenuators offer power dissipation up to 100 m W and are designed to work in frequencies from DC to 18 GHz. High reliability and tight tolerance options are available. G eneral Specifications

tva0300n07

Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Contextual Info: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,

diode wb1

Abstract: MRF896S WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F896 M R F896S The RF Line NPN S ilico n RF P o w er T ran sisto rs Motorola Prafanwl DavlcM Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear am plifier applications in industrial and commercial FM/AM equipment

LR38653

Abstract: SENSOR rgb f13 LR3865 OFST10 isd 4025 WN07V ir3y5
Contextual Info: Technical Manual Digital Signal Processing LSI for CCD （LR38653） Ver．0.31 Published in March 2006 * Specifications of the product covered herein may be subject to change without notice. General Precautions This document and the product covered herein are protected by international copyright and proprietary right laws.

LR38627

Abstract: CIRCUIT diagram LR38627 WN02H RNG12 sharp linear ccd 5000 bit 24LC04B M24C04 0 to 20ma converted into 0 to 5v with useing ic CH451 CIRCUIT diagram tv sharp 21 BG 12
Contextual Info: Technical Manual Digital Signal Processing LSI for CCD LR38627 Ver. 0.42 Published in Feb 2007 * Specifications of the product covered herein may be subject to change without notice. General Precautions This document and the product covered herein are protected by international copyright and proprietary right laws.

MRF896

Abstract: 1N4001 Motorola
Contextual Info: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

MRF9120

Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of this

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

MRF9120

Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

100B470JP500X

Abstract: MRF9120
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

845 motherboard circuit

Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

845 motherboard circuit

Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Contextual Info: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor motorola 114-8

Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF377H

Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377H

Abstract: nippon capacitors J628 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

0805J

Abstract: nippon capacitors J564 Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

581 transistor motorola

Abstract: nippon capacitors 2508051107Y0 dvbt transmitter 3A412 MRF377 MRF377R3 MRF377R5 J263
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

HM 84 AB

Abstract: IFR 840 MRF896 1J100 HM18
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors Designed for 24 Volt UHF large-signal, com mon emitter, Class AB and Class A linear am plifier applications in industrial and com mercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.