WAFER DICE Search Results

Contextual Info: Wafer and Die Information Sheet Memory and Wireless / RF Products Features Level 1 • Async SRAMs, dual ports, FIFOs, micropower SRAMs, PROMs, sync SRAMs wafer and die, WirelessUSB LP wafer ■ Wafer ❐ Standard wafer 25 to 30 mil thick ❐ Background wafer to 14 mil thick

Contextual Info: Wafer and Die Information Sheet Memory and Wireless / RF Products Features Level 2 • Async SRAMs, dual ports, FIFOs, micropower SRAMs, PROMs, sync SRAMs wafer and die, WirelessUSB LP wafer ■ Wafer ❐ Standard wafer 25 to 30 mil thick ❐ Background wafer to 14 mil thick

Contextual Info: DICE FORM Waffle pack cavity plate Suffix D2: dice in cavity plate Wafer pack Suffix D1: wafer tested and inked Suffix D3: wafer tested, inked and scribed at 70% Circle pack Suffix D4: wafer tested inked and scribed at 100% / I T SGS-THOMSON 683

SPANSION date code format

Abstract: AM29 T0003 Am29f 405 gde 8 905 959 252
Contextual Info: ‹ Chapter 8 Die and Wafer Shipments CHAPTER 8 DIE AND WAFER SHIPMENTS Introduction Product Carrier Guide for Die and Wafers Storage Conditions for Die and Wafer Carrier Designs for Singulated Die Waffle Pack Surftape and Reel Carrier Designs for Wafers Wafer Jar

AM29

Abstract: 29f800bb AMD xp
Contextual Info: u Chapter 11 Die and Wafer Shipments CHAPTER 11 DIE AND WAFER SHIPMENTS Introduction Product Carrier Guide for Die and Wafers Carrier Designs for Singulated Die Waffle Pack Surftape and Reel GEL-PAK Die Tray Carrier Designs for Wafers Wafer Jar GEL-PAK Wafer Tray

Standard Wafer Eval

Abstract: Mil-Std-105D MIL-STD-105-D MIL-STD105D GaAs wafer
Contextual Info: PERFORMANCE GRADING AND SCREENING OPTIONS FOR MwT GaAs FETS LEGEND Wafer Evaluation Die Optional Standard Wafer Evaluation Evaluation Sample RF & DC Audit 40 Dice Min. MwT-2M0903 Process Wafer Stabilization Bake 300°C for 5 hours 100% DC Probe Scribe and Break

F37011

Contextual Info: TN0055 Technical note SRI4K die description Product information ● Product name: SRI4K ● Die code: P117ZMY Wafer and die features October 2007 Wafer diameter 8" Wafer thickness 180 µm Die technology F6SPs40s 3M 1P Diffusion Plant Chartered Die identification

smd ag zener

Abstract: melf zener diode smd CLL4148 zener wafer bzx84c C1N4148 C1N414 CBZX85C
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company DICE/DIFFUSED SILICON WAFERS FOR DIODES ! Type : Switching and Zener Diodes voltage range 4.7 V to 47 V . ! Technology : Silicon Planar ! Wafer Size : 4” wafer with primary flat

MMBT4403

Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1127 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 13, 2008 February 11, 2009 Discrete Semiconductor Alternate Wafer Fab PCN #: 1127 TITLE Qualification of FabTech as additional wafer fab source for discrete devices

ZHCS1006TA

Abstract: bat54ata
Contextual Info: PCN-1122 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 30, 2008 January 01, 2009 Schottky Diodes Additional wafer manufacturing location PCN #: 1122 TITLE Introduction of additional wafer manufacturing location DFT for Zetex schottky diodes

RLA120

Abstract: RLA80 8 resistor array 10k dip breadboard RLA Linear Array applications manual, Raytheon raytheon analog 24 pin dip MIL GRADE TRANSISTOR ARRAY raytheon transistor raytheon rla bipolar transistor tester RAYTHEON
Contextual Info: Sing!e ucpy RLA Linear Macrocell Array Semicustom Program Handle With Care Services Offered: • ■ ■ ■ ■ Photo mask layout Wafer fabrication Package assembly Testing — wafer and package Reliability screening — commercial and military ■ Technical aid

MDC 2301

Abstract: 74ACT04 J330 LM108 MIL-HDBK-263 National semiconductor die fr003 NSC die
Contextual Info: Name: ME MAS-2301 Department Specification Title:" GENERAL PROCEDURE FOR DIE AND WAFER SALES " Rev:"2.0" Page: 1 TABLE OF CONTENTS 1. PURPOSE 2 2. APPLICABLE DOCUMENTS 2 3. GENERAL INFORMATION 2 4. DIE AND WAFER PACKAGING SPECIFICATIONS 3 5. GENERAL INSPECTION CRITERIA

Contextual Info: Am29LV200B Known Good Wafer Data Sheet Retired Product Am29LV200B Known Good Wafer Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

SBR2U30P1

Abstract: SBR02U100LP-7 DMS2120LFWB SBR1U150SA SBR20100CT SBR10100CTB
Contextual Info: PRODUCT CHANGE NOTICE Initial DCS/PCN-1144 Rev 00 Final Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: August 6, 2009 November 4, 2009 Discrete Semiconductors Additional Wafer Fab Sources PCN #:1144 REV 00 FINAL TITLE Qualification of additional wafer fabrication sources

IXDN0018

Abstract: MOSFET and IGBT die and 150 mm wafer products IGBT die
Contextual Info: IXDN0018 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 October 16, 2003 MOSFET and IGBT die and 150 mm wafer products Customer: Various IXYS product type: MOSFET and IGBT die and 150 mm wafer products. Description of changes:

AM29F200BB support

Contextual Info: SUPPLEMENT Am29F200B Known Good Wafer 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 Note: This supplement contains information on the Am29F200B in Known Good Wafer form. Refer to the Am29F200B standard datasheet (publication 21526) for full electrical specifications.

8050 equivalent

Contextual Info: SUPPLEMENT Am29LV400B Known Good Wafer 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 Note: This supplement contains information on the Am29LV400B in Known Good Wafer form. Refer to the Am29LV400B standard datasheet (publication 21523) for full electrical specifications.

Contextual Info: SUPPLEMENT Am29LV800B Known Good Wafer 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2 Note: This supplement contains information on the Am29LV800B in Known Good Wafer form. Refer to the Am29LV800B standard datasheet (publication 21490) for full electrical specifications.

Contextual Info: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: SB 5100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

SB360 diode

Abstract: SB360
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: SB360 Single Anode 3A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

Contextual Info: SB 2100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 2 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

DSA009923

Contextual Info: SB 1040 SCHOTTKY DIE SPECIFICATION General Description: 40 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: SB 10100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage