W16 90 Search Results

U100

Abstract: MB91F469 P-316 P356 b20 p03
Contextual Info: 1 2 3 4 5 R100 6 8 7 MONCLK GND X0 X1 A1 D8 D13 D17 A20 H17 N17 U17 Y20 Y15 U13 U8 U4 Y1 N4 H4 D4 Y19 Y18 Y17 D6 D11 D15 F17 L17 R17 U15 U10 U6 R4 K4 F4 A16 A15 A18 T19 R18 M19 N20 W17 W16 U14 V14 W15 C16 C15 Y16 U16 V17 V16 V15 G18 G17 F19 F18 E20 E19 E18

CERPACK K73

Abstract: 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB
Contextual Info: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

cf 455

Abstract: 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 CMX7031 cf-455 PE0201 4C00
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX7031 Synthesiser Lock Time Publication: AN/2WR/7031SYNTH/1 March 2006 1 Introduction This document has been produced to illustrate the performance of the integrated synthesisers used in the CMX7031 Two-Way Radio Processor IC.

intel topside mark

Abstract: TE28F160S5-70 28F160S3 28F160S5 28F320S3 28F320S5 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F160S5 28F320S3, 28F320S5 SPECIFICATION UPDATE Release Date: November 1998 Order Number: 297849-009 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

DT28F160S5-70

Abstract: DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 28F160S5 28F320S5
Contextual Info: 3 VOLT AND 5 VOLT FlashFile MEMORY 28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297849-010 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

TE28F160S5-70

Abstract: 28F160S5 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3
Contextual Info: 3 Volt and 5 Volt FlashFile Memory 28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16 Specification Update July 1999 Notice: The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications.

CY27C256A-45WMB

Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
Contextual Info: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

CY27C256A-45JC

Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
Contextual Info: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

Delta W16

Abstract: 27C128 C128 CY27C128 27C128-45
Contextual Info: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY27C256A 5 H S F J? p Y P P p c q J,. 1. I ,L,¿ k 3 k.^3 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 4 5 -200 ns 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

C5121

Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
Contextual Info: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention

MB86R02

Abstract: w16 72 indigo MB91F467SA MB91460 an-mb86r02 0x0000018 apix MB86R SBUP
Contextual Info: Fujitsu Microelectronics Europe Application Note an-mb86r02-Apix_Link_Setup-rev0-30 GRAPHICS CONTROLLERS MB86R02 SETUP FOR JADE-D APIX COMMUNICATION APPLICATION NOTE Internal Revision History Revision History Date 2009-08-18 2009-06-09 2009-08-10 Issue V0.10

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

w16 72

Abstract: MB86R02 fujitsu display 30 pin connector MB91460 indigo apix ashell
Contextual Info: Fujitsu Microelectronics Europe Application Note an-mb86r02-apix-link-setup-rev0-63.doc GRAPHICS CONTROLLERS MB86R02 SETUP FOR JADE-D APIX COMMUNICATION APPLICATION NOTE Internal Chapter 04 Revision History Revision History Date 2010-07-20 2009-06-09 2009-08-10

stria

Abstract: 3011P 9027C
Contextual Info: fax id: 3011 CY27C128 p vp: v « *1 X X - 128K 16K x 8-Bit CMOS EPROM Features • W ide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

LC 7258

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45-200 ns) • 5 V ± 1 0 % p o w e r s u p p ly

W16 sot 23

Abstract: 27C128-200 sot 23 W16 27C128 CY27C128
Contextual Info: CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance Functional Description

780SA

Contextual Info: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 45 - 200 ns 5V ± 10% power supply Capable of withstanding >2001VESD Latch-up protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C040

Contextual Info: ADVANCED INFORMATION CYPRESS MILITARY SPECIFICATIONS Group A Subgroup Testing DC C haracteristics Para neter Subgroups VoH 1, 2, 3 VOL \ 1, 2, 3 VlH 1,2,-3 \ lo z ' 1 ,2 ,3 / \ Iix Icc 1, 2, 3 \ V il 1 ,2 ,3 \ _ IsB > 1 ,2 ,3 .\ \ •" 1 ,2 ,3 - Sw itching C haracteristics

27C256-200

Abstract: CY27C256 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS
Contextual Info: CY27C256 32K x 8ĆBit CMOS EPROM into a lowĆpower standĆby mode. The and low current requirements allow for CY27C256 is packaged in the industry gang programming. The EPROM cells alĆ standard 600Ćmil DIP, PLCC, and TSOP low each memory location to be tested