STRIA Search Results

ct4 dale

Abstract: MIL-R-22684 Dale Electronics
Contextual Info: MODEL CT M etal Film Resistors M ilita ry , M 1L-R-22684 Q ualified , Type RL and In d u strial Sem i-Precision FEATURES • Electroplated tin-lead solder finish leads • Semi-Precision resistors combine long-term stability with low inductance, low noise and low cost

25X2

Abstract: 2SA770 2SA771 w506
Contextual Info: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦*. i * F o r g e n e ra l and in d u stria l

Contextual Info: -6433 B HARRIS CMOS Quad Bus Separator/Driver Features Pinout TOP VIEW SINGLE POWER SUPPLY HIGH NOISE IM M UNITY w c " IN DU STRIAL AND M IL IT A R Y GRADES ’* [ DRIVE C APA CITY ’• [ 300pF ,y [ SOURCE C U R R E N T 4mA SINK C U R R E N T 6mA PROPAGATIO N D E L A Y

brimar

Contextual Info: F/7001 In d u strial T ype rt- I MAX. x < TYPE F/7001 BEAM TETRODE The B R IM A R F/7001 is a miniature beam tetrode intended prim arily for use as an R.F. amplifier up to 50 Mc/s in mobile equipment. It is a T rustw orthy valve and has been designed for use under adverse conditions of vibration and shock.

Thyratron

Abstract: ME1502 Mullard i-089
Contextual Info: T R IO D E T H Y R A T R O N ANI T riode inert-gas-filled thyratron with negative control ch a racteristic. P rim a rily d esigne d for in d u strial control applications. " • IO N S A N D , preceding This data sheet should be read in conjunction wi

brimar

Contextual Info: im In d u stria l T yp e r - 2 " - 4 MAX TYPE 7032 GATING HEPTODE t « n . 2 P's J 0 0 uni I The B RIM A R 7032 is a m iniature heptode with short grid base characteristics on grid 1 and grid 3. It is of Tru stw orth y construction and is intended for use

3CX10000A3

Contextual Info: TENTATIVE DATA 8159 3CX10,OOOA3 MEDIUM-MU POWER TRIODE The Eimac 3CX10, 000A3 i s a ceram ic and metal power triode in­ tended primarily for u s e a s a power o s c illa t o r in in d u stria l-h e atin g a p p l ic a t io n s . It i s a l s o recommended for u s e a s a grounded-grid

VR105

Abstract: oc3 vr105 g105-1d
Contextual Info: Ref.: G105/1D Cold-Cathode Yoltage-Stabiliser Code: VRI05/30 CV686 ^ T h e V R 1 0 5 30 is a cold-cathode, gas-filled, voltage-stabiliser fo r use in in d u stria l and radio e q u ip m e n t w h e re a stable so u rce of voltage is req uired . It is equivalent t o the U .S.A . O C 3 type.

Contextual Info: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm

thyristor mcr 406

Abstract: MCR206 MCR205 MCR201 MCR202 MCR203 MCR204
Contextual Info: N1CR201 SILICON thru MCR206 G A Cl 13 k SILICON CONTROLLED RECTIFIERS 0.5 AMPERE RMS 15 thru 200 VOLTS SIGNAL THYRISTORS . . . Annular PNPN devices designed fo r ind u stria l/m ilita ry applica­ tions such as relay and lamp drivers, small m o to r controllers and

VX30

Abstract: VX15 VX20 VX25 VX40 VX50
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS VX15-50 MULTISTAC Fast Recovery FEATURES D ES C R IP TIO N • • • • • The VX M U LT IS TA C s ilico n re c tifie r assem blies meet th e strin g e n t re lia b ility requirem ents o f com m ercial, ind u stria l and

MRF817

Abstract: f817 S201 CASE-244 SS01
Contextual Info: MRF817 SILICON The RF Line 2.5 W - 900 M Hz R F POWER T R A N S IS T O R NPN S IL IC O N R F POWER T R A N S IS T O R NPN S IL IC O N . . . designed fo r 13.6 V o lt U H F large-signal a m p lifie r a p p lic a tio n s in in du stria l and com m e rcial FM e q u ip m e n t ope ra tin g to 960 MHz.

mrf-232

Abstract: 1803 TRANSISTOR equivalent MRF232 VK200
Contextual Info: MRF232 SILICON T h e R F L in e 7.5 W - 9 0 M H z RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTORS N PN S IL IC O N .d e s ig n e d fo r 12.5 V o lt, m id-band large-signal a m p lifie r a p p li­ cations in Ind u stria l and com m e rcia l FM e q u ip m e n t o p e ra tin g in the

2n2405

Abstract: 2N1893
Contextual Info: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t

MPS06

Abstract: 2N21 MP500 MP504 MP506 TNR*G MP501 MP502 MP505 Germanium power
Contextual Info: MP500 ri.ru MP502 GERMANIUM MP504 thru MP506 PN P germ anium power tr a n sisto r s for h igh-gain, high-power am p lifier and sw itching applications in high r e lia b ility ind u strial equipment. S T Y L E 1: P IN I. B ASE 3. C O L L E C T O R (C O N N E C T E D T O

TA7303

Abstract: 2N5180 pj 0209 RCA-2N5180 14780 2n5180 rca h.1299
Contextual Info: File No. 289 QQQBÆI R F Power Tran sisto rs Solid State Division 2N5180 Silicon N-P-N Epitaxial Planar Transistor F o r V H F A p p lica tio n s in Ind u strial and C om m ercial E q u ip m e n t Features: • ■ ■ ■ » ■ High gaitvbandwidth product

1d105

Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
Contextual Info: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s

MRF603

Abstract: 1803 TRANSISTOR equivalent K 2642 transistor R/MRF603
Contextual Info: MRF603 silicon T h e R F L in e 1 0 W - 175 MHz R F POWER T R A N SISTO R NPN SILICO N NPN SILIC O N R F POWER TRA N SISTO R . . .d esig n ed fo r 1 2 .5 V o lt V H F large-signal p o w e r a m p lifie r a p p lic a ­ t io n s re q u ire d in m ilit a ry and in d u stria l e q u ip m e n t o p era tin g t o 3 0 0

2SD103

Abstract: 2SD102 2SB502 2SB503 AC74 TU-23
Contextual Info: v U □ > N P N f i* M È è » l‘ 7 > ì> 7 ^ SILICON N PN DIFFUSED JUNCTION TRANSISTOR 2 S D 1 , 2 2 S D 1 3 S it I lff i In d u stria l A pplications OJzWJlX'f o DC— DC O B ilS U ^ a . U — O Audio Pow er Amplifier, Pow er Sw itching, DC—DC C onverter

T2L fuse

Abstract: HD-234 HD-235 HD-534 HD-535 Logic PROBE diagram circuit 535 column driver
Contextual Info: nn HD-234/534 h a r r is \jQ fj Hex Interface Inverters HD-235/535 Hex Interface Drivers GENERAL DESCRIPTION Th e integrated circu its covered b y th is data sheet fo rm a part of H a rris' fam ily of M ilita ry and In d u stria l M o n o lit h ic Interface C ir­

Wire Cable AWG

Abstract: M135
Contextual Info: ‘+ 3 1 1830^5 épi!? IN stria wire No. DESCRIPTION 1 PLUG 2 PLUG HOLDER used 30P black color PVC. M135 BAND WIRE black enfold gluey wire. EA 1 EA 1 MM MM O UL2468 AWG#24 0. 16 by 11 rootlets, black color twin wire, 0. D. 1.8 by 3.6 ±0. 1mm. CABLE 0’

Contextual Info: Panasonic T yp e : P art No.: D igital T e rre stria l T u n e r CT10TS EN A 4IZO IIIO IIIO T y p e C T 1 0 T S D o u b le C o n v e r s io n , h ig h p e r f o r m a n c e fo r d ig ita l / a n a lo g c o m p a t ib le tr a n s m is s io n r e c e iv e r .

as2531

Abstract: AS2531F AS2531G AS2531A auto dialling circuit AS2531B
Contextual Info: Data Sheet A S 2 5 3 1 A / B / C / D / E /F /G /J / U Versatile Single Chip Telephone with 14 N um ber R epertory Dialler A u stria M ikro S yste m e In te rn a tio n al AG General Description Key Features The AS2531 is a CMOS integrated circuit that contains

S2535

Abstract: AN3010 AS2533 an 2533T
Contextual Info: Data Sheet AS2533/4B/5/6 M ulti-Standard CM OS Single Chip Telephone 1C with Dual Soft Clipping A u stria M ikro S yste m e In te rn a tio n al AG General Description Key Features □ Line/speech circuit, LD/MF repertory dialler and tone ringer on one 28 pin CMOS chip