W16 72 Search Results

CY27C256A-45WMB

Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
Contextual Info: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

CY27C256A-45JC

Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
Contextual Info: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

Delta W16

Abstract: 27C128 C128 CY27C128 27C128-45
Contextual Info: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY27C256A 5 H S F J? p Y P P p c q J,. 1. I ,L,¿ k 3 k.^3 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 4 5 -200 ns 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

C5121

Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
Contextual Info: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

Contextual Info: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

stria

Abstract: 3011P 9027C
Contextual Info: fax id: 3011 CY27C128 p vp: v « *1 X X - 128K 16K x 8-Bit CMOS EPROM Features • W ide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

LC 7258

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45-200 ns) • 5 V ± 1 0 % p o w e r s u p p ly

W16 sot 23

Abstract: 27C128-200 sot 23 W16 27C128 CY27C128
Contextual Info: CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance Functional Description

780SA

Contextual Info: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 45 - 200 ns 5V ± 10% power supply Capable of withstanding >2001VESD Latch-up protection up to 200mA Two line control functions to prevent bus contention

27c256-200

Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
Contextual Info: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

Contextual Info: ^ s b b b b b b ? ¿s* rszgggfjKr CY27C512 r r ^ 'n p n n L> 1 1 i l l L o O 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res CY27C256A is also available in windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45 - 200 ns)

Contextual Info: fax id: 3026 W CYPRESS Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention Standard JEDEC packages

14A0

Contextual Info: fax id: 3026 C Y 2 7 C 2 5 6 A 3 2 K x 8 CMOS EPROM Featu res • Very F ast Read A c c e s s T im e: 45 - 2 0 0 ns • SV ± 10% P o w e r S u p p l y • C a p a b le o f w i t h s t a n d i n g >200 1V ESD • L a tc h - u p P r o t e c tio n up to 2 0 0 m A

CY27C512

Contextual Info: fax id: 3019 CY27C512 p ro : V « *1 X X - 6 4 K x 8 CMOS EPROM is also available in windowed packages 28-pin hermetic DIP and and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Features • Very F ast Read A c c e s s T im e: (45 - 200 ns)

Contextual Info: fax id: 3026 CY27C256A w CYPRESS 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

MX7533KP

Contextual Info: SCOPE: CMOS, 10-BIT MONOLITHIC, MULTIPLYING D/A CONVERTER Device Type 01 02 03 Generic Number MX7533S x /883B MX7533T(x)/883B MX7533U(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the