W16 00 Search Results

intel topside mark

Abstract: TE28F160S5-70 28F160S3 28F160S5 28F320S3 28F320S5 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F160S5 28F320S3, 28F320S5 SPECIFICATION UPDATE Release Date: November 1998 Order Number: 297849-009 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

AX206

Abstract: AX207 AX209
Contextual Info: 19-0065; Rev 6; 10/03 +5V, RS-232 Transceivers with 0.1µF External Capacitors Next-Generation Device Features ♦ For Low-Cost Applications: MAX221E: ±15kV ESD-Protected, +5V, 1µA, Single RS-232 Transceiver with AutoShutdown ♦ For Low-Voltage and Space-Constrained

code for Winograd algorithm

Abstract: implementation of Winograd DFT algorithm transistor w04 Winograd AP-922 Winograd DFT algorithm feig sample code w17 transistor AP-528 w04 12
Contextual Info: AP-922 Streaming SIMD Extensions—A Fast Precise 8x8 DCT A Fast Precise Implementation of 8x8 Discrete Cosine Transform Using the Streaming SIMD Extensions and MMX Instructions Version 1.0 4/99 Order Number: 742474-001 AP-922 Streaming SIMD Extensions—A Fast Precise 8x8 DCT

28F320J5

Abstract: 28F640J5 DA28F320J5-100 E28F320J5-100 intel DOC
Contextual Info: Intel StrataFlash Memory 32 and 64 Mbit SPECIFICATION UPDATE Release Date: March 1998 Order Number: 297848-007 The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are

cf 455

Abstract: 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 CMX7031 cf-455 PE0201 4C00
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX7031 Synthesiser Lock Time Publication: AN/2WR/7031SYNTH/1 March 2006 1 Introduction This document has been produced to illustrate the performance of the integrated synthesisers used in the CMX7031 Two-Way Radio Processor IC.

DG509ACJ

Abstract: DG509A DG08A DG508ACJ
Contextual Info: 19-0028; Rev 3; 9/01 Monolithic CMOS Analog Multiplexers Maxim’s DG508A and DG509A are monolithic CMOS analog multiplexers muxes : the DG508A is a single 8-channel (1-of-8) mux, and the DG509A is a differential 4-channel (2-of-8) mux. Both devices guarantee break-before-make switching.

DT28F160S5-70

Abstract: DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 28F160S5 28F320S5
Contextual Info: 3 VOLT AND 5 VOLT FlashFile MEMORY 28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297849-010 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

TE28F160S5-70

Abstract: 28F160S5 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3
Contextual Info: 3 Volt and 5 Volt FlashFile Memory 28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16 Specification Update July 1999 Notice: The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications.

MAX213

Abstract: MAX202CPE MAX203CPP
Contextual Info: 19-0065; Rev 6; 10/03 +5V, RS-232 Transceivers with 0.1µF External Capacitors Next-Generation Device Features ♦ For Low-Cost Applications: MAX221E: ±15kV ESD-Protected, +5V, 1µA, Single RS-232 Transceiver with AutoShutdown ♦ For Low-Voltage and Space-Constrained

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

Contextual Info: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

LC 7258

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45-200 ns) • 5 V ± 1 0 % p o w e r s u p p ly

W16 sot 23

Abstract: 27C128-200 sot 23 W16 27C128 CY27C128
Contextual Info: CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance Functional Description

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C040

Contextual Info: ADVANCED INFORMATION CYPRESS MILITARY SPECIFICATIONS Group A Subgroup Testing DC C haracteristics Para neter Subgroups VoH 1, 2, 3 VOL \ 1, 2, 3 VlH 1,2,-3 \ lo z ' 1 ,2 ,3 / \ Iix Icc 1, 2, 3 \ V il 1 ,2 ,3 \ _ IsB > 1 ,2 ,3 .\ \ •" 1 ,2 ,3 - Sw itching C haracteristics

27c256-200

Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
Contextual Info: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

Contextual Info: ^ s b b b b b b ? ¿s* rszgggfjKr CY27C512 r r ^ 'n p n n L> 1 1 i l l L o O 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

27C256

Abstract: 27C256-45 CY27C256 27c256-200 27C256-150
Contextual Info: 32K X 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and m ilitary • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less th a n 83 mW when deselected • ± 10% Power supply tolerance Functional Description

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res CY27C256A is also available in windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45 - 200 ns)

27C256-200

Abstract: 27C256 27C256-2 27C256-45 27C256-70 CY27C256 27C256-55 CY27C256T-70WMB 27C256 UV 27c256120
Contextual Info: CY27C256 V CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

Contextual Info: fax id: 3026 W CYPRESS Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention Standard JEDEC packages

14A0

Contextual Info: fax id: 3026 C Y 2 7 C 2 5 6 A 3 2 K x 8 CMOS EPROM Featu res • Very F ast Read A c c e s s T im e: 45 - 2 0 0 ns • SV ± 10% P o w e r S u p p l y • C a p a b le o f w i t h s t a n d i n g >200 1V ESD • L a tc h - u p P r o t e c tio n up to 2 0 0 m A