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    STMicroelectronics STW11NK90Z

    MOSFET N-CH 900V 9.2A TO247-3
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    DigiKey STW11NK90Z Tube 391 1
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    Avnet Americas STW11NK90Z Tube 16 Weeks 600
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    Mouser Electronics STW11NK90Z 542
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    Newark STW11NK90Z Bulk 600
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    STMicroelectronics STW11NK90Z 543 1
    • 1 $7.47
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    TME STW11NK90Z 20 1
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    ComSIT USA STW11NK90Z 35
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    Avnet Silica STW11NK90Z 2,340 17 Weeks 30
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    Chip Stock STW11NK90Z 16,700
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    EBV Elektronik STW11NK90Z 8,610 18 Weeks 30
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    IBS Electronics STW11NK90Z 600
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    STMicroelectronics STW11NK100Z

    MOSFET N-CH 1000V 8.3A TO247-3
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    DigiKey STW11NK100Z Tube 366 1
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    Avnet Americas STW11NK100Z Tube 16 Weeks 600
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    Mouser Electronics STW11NK100Z 3,290
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    Newark STW11NK100Z Bulk 32,603 1
    • 1 $4.39
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    STMicroelectronics STW11NK100Z 3,317 1
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    Bristol Electronics () STW11NK100Z 58
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    TME STW11NK100Z 504 1
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    ComSIT USA STW11NK100Z 4
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    Avnet Silica STW11NK100Z 15,180 17 Weeks 30
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    Chip Stock STW11NK100Z 20,450
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    EBV Elektronik STW11NK100Z 14,040 18 Weeks 30
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    IBS Electronics STW11NK100Z 360 30
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    Win Source Electronics STW11NK100Z 16,950
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    STMicroelectronics STW11NK100Z.

    Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:8.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:230W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STW11NK100Z.
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    Newark STW11NK100Z. Bulk 600
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    Johanson Technology Inc L-07W11NKV4T

    Wirewound Inductors, 0402, 11Nh±10%, 640Ma, Ni/Au (Rohs), No Mark, 7" Reel Paper Tape |Johanson Technology L-07W11NKV4T
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    Newark L-07W11NKV4T Reel 10,000
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    W11NK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    w11nk100z

    Abstract: W11NK100 STW11NK100Z stw11nk sound Processor acp 2371 st 0560
    Contextual Info: W11NK100Z N-CHANNEL 1000V - 1.1Ω - 9A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE W11NK100Z • ■ ■ ■ ■ ■ VDSS RDS on 1000 V < 1.38 Ω ID Pw 9A 230 W TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW11NK100Z O-247 w11nk100z W11NK100 STW11NK100Z stw11nk sound Processor acp 2371 st 0560 PDF

    Contextual Info: W11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw W11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized


    Original     		STW11NK90Z O-247 PDF

    Contextual Info: W11NK100Z W11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features Type VDSS @Tjmax W11NK100Z 1000 V RDS(on) ID Pw < 1.38 Ω 8.3 A 230W • Extremely high dv/dt capability ■ 100% avalanche tested


    Original     		STW11NK100Z O-247 PDF

    w11nk100z

    Abstract: zener diode 332 STW11NK100Z stw11nk Zener diode 83a sound Processor acp 2371 marking Dt
    Contextual Info: W11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH Power MOSFET TYPE W11NK100Z • ■ ■ ■ ■ ■ VDSS RDS on 1000 V < 1.38 Ω ID Pw 8.3 A 230 W TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW11NK100Z O-247 w11nk100z zener diode 332 STW11NK100Z stw11nk Zener diode 83a sound Processor acp 2371 marking Dt PDF

    w11nk100z

    Abstract: W11NK100 W11NK W11NK10 sound Processor acp 2371 STW11NK100Z JESD97 5K6000
    Contextual Info: W11NK100Z W11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features Type VDSS @Tjmax W11NK100Z 1000 V RDS(on) ID Pw < 1.38 Ω 8.3 A 230W • Extremely high dv/dt capability ■ 100% avalanche tested


    Original     		STW11NK100Z O-247 w11nk100z W11NK100 W11NK W11NK10 sound Processor acp 2371 STW11NK100Z JESD97 5K6000 PDF

    w11nk90z

    Abstract: stw11nk90z W11NK90
    Contextual Info: W11NK90Z N-CHANNEL 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw W11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized


    Original     		STW11NK90Z O-247 O-247 w11nk90z stw11nk90z W11NK90 PDF

    w11nk90z

    Abstract: STW11NK90Z W11NK90 st mosfet JESD97
    Contextual Info: W11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw W11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized


    Original     		STW11NK90Z O-247 w11nk90z STW11NK90Z W11NK90 st mosfet JESD97 PDF

    w11nk100z

    Abstract: W11NK100 stw11nk100z
    Contextual Info: W11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE W11NK100Z • ■ ■ ■ ■ ■ VDSS RDS on 1000 V < 1.38 Ω ID Pw 8.3 A 230 W TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STW11NK100Z O-247 O-247 w11nk100z W11NK100 stw11nk100z PDF