W06 DIODE Search Results

W06A DIODE

Abstract: 1S2591 W06B W06C W06A R-1 GREEN CATHODE diode I60r TL2512 W06 DIODE Hitachi W06C
Contextual Info: -raregffSHFrri ach i /ïuPTüELhc i kon i os >- - • — \ 6 8C 0 97 80 Y - Ù/~ / =fr— K ( General -Use Rectifier Diode W06 "tfl D E ] MMTLEDS 000^700 T V RRM : 50V~200V 4 | ' >F(AV): 0.75A «S3.0MAX (0 . 1 2 ) 62MIN (2.44) 29MIN 5.0 MAX _29MIN_ ~ ( 1 .1 4 ) ~ T ( ^ 2 p

N5256AW12

Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
Contextual Info: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22

Contextual Info: BRIDGE RECTIFIERS PLASTIC MATERIAL U SED C A R R IE S UL 94V-0 OPERATING T EM PERA TU RE RANGE : -55 "C to +125 °C STO RAGE T EM PER A T U R E RANGE : -55'C tO+150“C TYPE Maximum Peak Reverse Voltage 1.5 AMPERES/RC-2 CASE 20 W005L W01 L W02 L W04 L W06 L

bwz06

Abstract: BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P
Contextual Info: BZW06-5V8,B/376,B BZW06P5V8,B/376,B  TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED F126 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

BD3 diode

Abstract: 6n06e k4366
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

N67 ferrite

Abstract: ITACOIL E2543 E25x13x7 L6562A ITACOIL E2543/E FUSE T4A 250v fuse T4A T4A 250V MBB0207
Contextual Info: EVL6562A-TM-80W 80 W high performance transition mode PFC evaluation board Data Brief Features • Line voltage range: 88 to 265 VAC ■ Minimum line frequency fL : 47 Hz ■ Regulated output voltage: 400 V ■ Rated output power: 80 W ■ Maximum 2fL output voltage ripple: 10 V pk-pk

transistor w06

Abstract: marking code w06 transistor CBTD3306 CBTD3306D CBTD3306PW w06 transistor marking W06
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 04 — 25 March 2010 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

E25x13x7

Contextual Info: EVL6562A-TM-80W 80 W high performance transition mode PFC evaluation board Data Brief Features • Line voltage range: 88 to 265 VAC ■ Minimum line frequency fL : 47 Hz ■ Regulated output voltage: 400 V ■ Rated output power: 80 W ■ Maximum 2fL output voltage ripple: 10 V pk-pk

W04 bridge rectifier

Abstract: S1NB60 55 KBPC3510 S1NB60 70 S1NB60 43 w08 bridge rectifier S1ZB60 W005S DI101 DI102
Contextual Info: SEMICONDUCTORS DIODES, Bridge Rectifier A range of surface mount and through hole bridge rectifiers offering current ratings from 0.8 Amp to 35 Amp. 0.8 Amp VRRM V 1N 1Z Supplied taped and reeled. Manufacturer: Shindengen Device & Order Code IFAV (A) at Tamb (°C)

PBP205

Abstract: GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810
Contextual Info: BRIDGE CROSS REFERENCE GEN. INST. DIODES INC LITE ON RECTRON DB101GM DB102GM DB103GM DB104GM DB105GM DB106GM DB107GM DF005S DF01S DF02S DF04S DF06S DF08S DF01S SDF005 SDF01 SDF02 SDF04 SDF06 SDF08 SDF10 PBDF101S PBDF102S PBDF103S PBDF104S PBDF105S PBDF106S

Contextual Info: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current

DIODE w04

Abstract: W005 W02 diode
Contextual Info: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

Bridge Rectifiers

Abstract: transistor w04 W08 transistor DIODE w04 transistor w10 transistor w02 w08 bridge rectifier W005
Contextual Info: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com W005 - W10 SILICON BRIDGE RECTIFIERS

FB3206

Contextual Info: Technische Information / technical information FS50R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Transistor W06

Abstract: transistor RFP25N05 FP25N
Contextual Info: JJÌ H A R R I RFP25N05 S A u g u s t 1991 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package T O -2 2 0 A B TOP VIEW • 25A, 50V • rDS(on) = 0 .047H • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited

KBL06 AC

Abstract: KBP12 KBPC806G KBL005G kbl06g
Contextual Info: V V- V ¡s 5 ¡v v \ - \-é>^ •A\ V ' WAFAD001 “» «j ''"tu«: t / -, /7 E 1 27862 ;.? M V GLASS PASSIVATED BRIDGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Forward Voltage @ 2 5 t Ta Maximum Peak Reverse Voltage Maximum Average Rectified Current

IFS150B12N3T4_B31

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

Y6W 35

Contextual Info: Technische Information / technical information FP30R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

CBD3306

Abstract: sot902 marking w06 D306 tssop8 CBTD3306
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

CBTD3306

Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

D306 transistor

Abstract: CBTD3306
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 7 — 3 January 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

Contextual Info: BRIDGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING TEMPERATURE RANGE : -55 °C to +125 "C STORAGE TEMPERATURE RANGE : -55 °C to+150°C Maximum Maximum Reverse Forward Peak Current Surge Current @ PR V @ 8.3ms @25 °C T a Superim posed lFM Surge