W06* MARKING Search Results

N5256AW12

Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
Contextual Info: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22

Contextual Info: 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: 256K x 16 EDO DRAM TECHNOLOGY, INC. MT4C16270 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible

MT4C16270

Abstract: MT4C16270DJ-4
Contextual Info: OBSOLETE 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C16270DJ-4

Abstract: MT4C16270
Contextual Info: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

T4C16270

Abstract: T4C16270DJ
Contextual Info: |U|IC=RON 256K M T4C16270 X 16 DRAM 256K x 16 DRAM DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 300m W active, typical

MT4C16270DJ-5

Abstract: MT4C16270
Contextual Info: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

Contextual Info: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*

Contextual Info: |U |IC R O N MT4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical

Contextual Info: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible

Contextual Info: 2 5 6 K X 16 EDO DRA M [M IC R O N DRAM M T 4C 16270 FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% pow er supply* • A ll inputs, outputs and clocks are TTL-com patible

w04 rectifier

Abstract: marking w04 w04 rectifier bridge W02 rectifier
Contextual Info: Formosa MS Bridge Rectifier W005 THRU W10 List List. 1 Package outline. 2 Features. 2

marking CODE W04

Abstract: W04 bridge rectifier w08 bridge rectifier bridge rectifier w02 w08 MARKING MARKING W04 W04 54 w04 marking w02 rectifier bridge transistor w04
Contextual Info: Formosa MS Bridge Rectifier W00 THRU W10 List List. 1 Package outline. 2 Features. 2

Contextual Info: MT4C16270 256K x 16 DRAM MICRON I TECHNOLOGY, NIC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

Contextual Info: MT4C16270 256K X 16 DRAM MICRON DRAM 256K x 16 DRAM 5V, EDO PAGE MODE PIN ASSIGNMENT (Top View • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu nction s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly*

transistor w06

Abstract: marking code w06 transistor CBTD3306 CBTD3306D CBTD3306PW w06 transistor marking W06
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 04 — 25 March 2010 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

BRIDGE-RECTIFIER w10

Abstract: w08 marking transistor marking w04 W04 bridge rectifier rectifier bridge w10 marking W04 W08 marking diode 202E W005 w04 marking
Contextual Info: W005 THRU W10 SINGLE PHASE SILICON BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere FEATURES ● ● ● WOB Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA Case: UL-94 Class V-0 recognized Flame Retardant Epoxy

bwz06

Abstract: BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P
Contextual Info: BZW06-5V8,B/376,B BZW06P5V8,B/376,B  TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED F126 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device

CBD3306

Abstract: sot902 marking w06 D306 tssop8 CBTD3306
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

CBTD3306

Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

D306 transistor

Abstract: CBTD3306
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 7 — 3 January 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

JESD22-C101E

Abstract: CBTD3306 CBTD3306D CBTD3306PW D306 FET marking codes 1B
Contextual Info: CBTD3306 Dual bus switch with level shifting Rev. 5 — 28 April 2011 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.

IBM25CPC700DB3A83

Abstract: DH27 DH06 DH07 IBM25CPC700DB3A83Z ae02 marking dh03 marking CODE W04 ae09 MARKING CODE k07
Contextual Info: . CPC700 Memory Controller and PCI Bridge Features • PowerPC 60x/7xx bus. • 66.66 MHz • 83.33 MHz • Synchronous DRAM interface operates at the processor bus speed with support for ECC. • PCI Revision 2.1 Compliant Interface. • ROM/SRAM/External peripheral controller.