W SA DIODE Search Results

G577BSR91U

Abstract: M470T5663EH3-CF7 AF82801IBM 7SZ14 R5538 BA92-05617A NP-R420-XA02RU BA96-04188A samsung ba92 TPS51125RGER
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-R420-XA02RU Ver. Location 0001 A1001 Part Number BA46-11159A S/W CD;UTILITY,QingDao-Int,Vista,1.0,Exp Part Name & Specification Q'ty SA/SNA 1 SA NP-R420-XA02RU Parent Part 0001

AF82801IBM

Abstract: M470T5663RZ3-CF7 TS-L633 KSB0705HA m470t5663qz3-cf7 M470T5663EH3-CF7 RT8207GQW TM-01020-003 tps51620 KSB0705HA-8J1X
Contextual Info: - This Document can not be used without Samsung's authorization - 5.Part List NP-R469-XS01RU Location Part Code Specification Qty SA/SNA A0010 3903-000115 CBF-POWER CORD;DT,EU,CP3,IEC320 C5,250/2 1 SA A1001 BA46-10703A S/W CD;UTILITY,BONN,CDS6,-,All_Lang,CD,1

ORIGIN ELECTRIC

Abstract: MD20SH05K MD36SH05K MD50SH05K MDA65SN1K
Contextual Info: SILICON HIGH VOLTAGE RECTIFYING DIODES MD r jSH05K, MDA65SN1K O R I G I N E L E C T R I C CO LTD •¡ttS • S 3 E T> I • PB#JIffi>SA<lk V £ # 'S C * # l. 2 . W l E A ' * * ^ '0 MAX65kV sa f#4SS>arp|i æ >1-* 3 » Electrical Absolute maximum ratings

Contextual Info: TOSHIBA TD62309P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62309P, TD62309F 6CH LO W SA TU RA TIO N H IGH-CURRENT SIN K DRIVER The TD62309P, TD62309F are comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching

Contextual Info: SKD 100 ?$[¥ ?$$¥7 ?M$¥ KM V <>> ] SB'+ .%48'. -%4U ? `>> W>> <J>> <`>> ? `>> W>> <J>> <`>> SA. V ^H _NU [XM <>>Y>` [XM <>>Y>W [XM <>>Y<J [XM <>>Y<` <=>> <=>> [XM <>>Y<= Symbol Conditions KM A. V WI _N -48'.)-;/ +%,8 A, V `I _N7 .1, -( <U A, V `I _Na O<H]Y<JI SO<]Y<J>U

Contextual Info: SKD 60 ?$[¥ ?$$¥7 ?M$¥ KM V => ] SB'+ .%48'. -%4U ? _>> W>> <J>> <_>> ? _>> W>> <J>> <_>> SA. V <>J ^NU [XM =>Y>_ [XM =>Y>W [XM =>Y<J [XM =>Y<_ <=>> <=>> [XM =>Y<= Symbol Conditions KM A. V WI ^N -48'.)-;/ +%,8 A, V _I ^N7 .1, -( <U A, V _I ^Na O<H]Y<JI S$_]Y<J>U

Contextual Info: SA M S U N G SEMICONDUCTOR INC OS KS54HC5TOS ÿ à f à Ï T & Â KS74HCTLS A w X / W * De | 7 ^ 4 1 4 5 OODhbOE 8-Bit Latch/Register with Readback Preliminary Specifications FEATURES DESCRIPTION • 1 0 port configuration enables output data back onto input bus

m61266

Abstract: M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP
Contextual Info: 2005.10 Everywhere you imagine. _ ICs for video signals j i / Z t t Z r f s n y w w w .re n e sa s.co m • - « i * U -'^ 3 ^ t? |gr 0 W & à i T 3 Pursuing high quality with one-chip solutions R enesas ICs for video signals. c R T *» è *f« a o f '^ '/ U

TRW dot 4 product

Abstract: usa137 MW131 0PI2154 0PI2155 0PI2254 0PI2255 GPI2155 VDC111
Contextual Info: OPTEK TECHNOLOGY INC Dt.E D | b7T0SflO 0 0 0 0 5 3 2 1 Optoelectronics D ivision T R W Electronic Components Group 19 8 7 Cost Sa ve r Product! Call T R W fo r more inform ation! Product Bulletin 520B January 1985 Optically Coupled Isolators Types 0PI2154, 0PI2155, 0PI2254, 0PI2255

Contextual Info: TELE F U N K E N SA 101 UKW -Diode für M eßzw ecke Technische D aten 1. Abm essungen der Röhre 2. Röhrenfassung Die Röhre ist für Meßzwecke entwickelt w orden und soll direkt in die Schaltung eingelötet w erden. Eine Verw endung der Röhre m it Fassung ist nicht v o r­

Contextual Info: TSOP75S.W www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Optimized for Sony and Cisco SA codes • Supply voltage: 2.5 V to 5.5 V

300Q1US41

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

1625AM

Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 140MHz SA5212A DESCRIPTION PIN CONFIGURATION The SA 5212A is a 14ki2 transim pedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications w here very low

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

Contextual Info: O rdering num ber : EN821C BTD4M N0.821C SA W O r Silicon Planar Type i Bidirectional Diode F eatu res - Small size and light weight. • DHD type package. A bsolute M axim um R atings atT a = 25°C Peak C urrent Ip f= 120Hz;,pulse width lOps Junction Tem perature

Contextual Info: SCHOTTKY BARRIER DIODE FCH08A06 sa / sov FEATURES o Sim ilar to T0-220AB Case o Fully M olded Isolation o Dual Diodes-Cathode Common o L o w Forward V oltage Drop o Low Power, Loss, H igh Efficiency o H igh Surge Capability O T j = 150’C operation MAXIMUM RATINGS

SAC10

Abstract: SAC12 SAC15 SAC18 SAC22 SAC26 SAC45 SAC50
Contextual Info: M ierosemiCorp. I The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore inform ation call: 602 941-6300 LOW CAPACITANCE TRANSIENT ABSORPTION ZENER Features • • • • S A C 5 .0 thru SA C 50 500 W ATTS PEAK PULSE POWER LOW CAPACITANCE SM ALL SIZE (DO-41)

V3022

Abstract: 125OC 850C
Contextual Info: R EM MICROELECTRONIC-MARIN SA V3022 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built in crystal with digital trimming and temperature compensation facilities

MSD6150

Contextual Info: MSD6150 silicon SILICON EPITAXIAL DUAL DIODE SILICON EPITAXIAL DUAL DIODE COMMON ANODE . . . designed fo r general-purpose co n su m e r applications. • H igh B re a k d o w n V o ltag e — • S pa ce -Sa ving Package w ith C o m m o n A n o d e C o n fig u ra tio n

zener diode 6w

Abstract: zener 24v 5w 36V zener MODEL SA 06-24-5S SA diode SA06 06-24-12S
Contextual Info: Encapsulated DC-DC Converter SA06 SERIES 6 Watts KEY FEATURES „ Power Modules for PCB Mounting „ Regulated Output „ Low Ripple and Noise „ 2-Year Product Warranty ELECTRICAL SPECIFICATIONS Model No. Max. output wattage W Input voltage (V.DC.) SA 06-24-3.3S

8 hour delay timer

Abstract: bu 808 df V3022 8 hour delay on timer Digital Alarm Clock by ttl Digital Alarm Clock by using ttl pulse load calculation formula for single pulse V3022SO28B 850C V3022SO28A
Contextual Info: R EM MICROELECTRONIC-MARIN SA V3022 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities

125OC

Abstract: V3023 V3023SO28A V3023SO28B 24 hour Digital clock circuit
Contextual Info: R EM MICROELECTRONIC-MARIN SA V3023 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities

125OC

Abstract: V3023
Contextual Info: R EM MICROELECTRONIC-MARIN SA V3023 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities

Contextual Info: SCHOTTKY BARRIER DIODE FSH05A04 FSH05A04B sa / 40v FEATURES o Sim ilar to TO-220AC and TO-220AB Case o Fully Molded Isolation Case o L o w Forw ard V oltage Drop O Low Pow er Loss, High Efficiency •“MAX5’ «■«■UltMAX O High Surge Capability o T j = 150”C operation