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    W 6N Search Results

    W 6N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11000N
    Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-PDIP -40 to 85 Visit Texas Instruments Buy
    74AC11004DW
    Texas Instruments Hex Inverters 20-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11074D
    Texas Instruments Dual Positive-Edge-Triggered D-Type Flip-Flops With Clear and Preset 14-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244PWR
    Texas Instruments Octal Buffers/Drivers 24-TSSOP -40 to 85 Visit Texas Instruments Buy
    74AC11257N
    Texas Instruments Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-PDIP -40 to 85 Visit Texas Instruments Buy

    W 6N Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    W6NRD0X-0000
    Cree Diameter: 50.8mm LCW type 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NRE0X-0000
    Cree Diameter: 76.2mm LCW type 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NXD0K-0000
    Cree Diameter: 50.8mm lsemi-insulating (prototype) 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NXD0KLSR-0000
    Cree Diameter: 50.8mm lsemi-insulating (prototype) 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NXD3J-0000
    Cree Diameter: 50.8mm lsemi-insulating (prototype) 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NXD3K-0000
    Cree Diameter: 50.8mm lsemi-insulating (prototype) 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
    W6NXD3L-0000
    Cree Diameter: 50.8mm lsemi-insulating (prototype) 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Original PDF 277.55KB 17
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    W 6N Price and Stock

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    Murata Manufacturing Co Ltd LQW03AW6N8J00D

    FIXED IND 6.8NH 460MA 180MOHM SM
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    DigiKey () LQW03AW6N8J00D Cut Tape 12,215 1
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    LQW03AW6N8J00D Reel 10,000 10,000
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    Avnet Abacus LQW03AW6N8J00D 9 Weeks 10,000
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    Chip One Stop LQW03AW6N8J00D Cut Tape 5,636 0 Weeks, 1 Days 10
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    Murata Manufacturing Co Ltd LQW03AW6N2J00D

    FIXED IND 6.2NH 360MA 220MOHM SM
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    DigiKey () LQW03AW6N2J00D Cut Tape 3,732 1
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    LQW03AW6N2J00D Digi-Reel 3,732 1
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    TME LQW03AW6N2J00D 10,000
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    Avnet Abacus LQW03AW6N2J00D 9 Weeks 10,000
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    STMicroelectronics STW6N95K5

    MOSFET N-CH 950V 9A TO247-3
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    DigiKey STW6N95K5 Tube 763 1
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    Newark STW6N95K5 Bulk 303 1
    • 1 $3.45
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    STMicroelectronics STW6N95K5 2,212 1
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    TME STW6N95K5 1
    • 1 $2.93
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    Avnet Silica STW6N95K5 2,400 17 Weeks 30
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    EBV Elektronik STW6N95K5 18 Weeks 30
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    TT Electronics / Power Partners PEAW6NA-10-USB

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey PEAW6NA-10-USB Bag 484 1
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    TT Electronics / Power Partners PEAMW6NA-12-B1

    AC/DC WALL MOUNT ADAPTER 12V 6W
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    DigiKey PEAMW6NA-12-B1 Bag 408 1
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    Sager PEAMW6NA-12-B1 1
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    W 6N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DSW1082-A

    Contextual Info: Delay Line - Filter UMPTS 6ns Model: DSW1082-A Application - WIRELESS w Error Amplifier Delay Compensation in MCPA Systems w New Generation MCPAs Benefits w Low Loss w Minimal Mass w Excellent Electrical Performance w Low Intermodulation Distortion w Optimized Delay Flatness vs. Loss


    Original
    DSW1082-A SC314ds0501 DSW1082-A PDF

    TCD1254GFG(8Z)

    Contextual Info: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO


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    75GB063D 75GAR063D TCD1254GFG(8Z) PDF

    Contextual Info: Afa GaAs SPDT Switch DC-4 GHz SW-226/227/228 • M iniature C eram ic P ackage ■ T erm inated S W -226 , High Isolation (S W -227), Low Loss (S W -228) ■ Fast Switching S peed, 6ns Typical ■ Ultra Low D C Pow er Consum ption CR-2 Guaranteed Specifications*


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    SW-226/227/228 SW-226/S PDF

    GHW Connectors

    Abstract: 16018.568.613
    Contextual Info: d : \ GHW GROTE & HARTMANN -'v. W t v VERBINDUNGSTECHNIK MDK M iniaturdoppelflachfedersystem e 2,8/4,8 mm, m it/ohne Stahlfeder, m it/ohne Einzelleitungsdichtungen MDK Leaf spring connector systems 2.S/4.8 mm, w ith /w ith ou t stainless steel spring, w ith /w ith ou t


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    PDF

    aadl

    Abstract: vm 87 ad cibh MFH-P BC975 om2t
    Contextual Info: <:D4 =-A ?A8F>9 :MJYZWMX W ,=DID >HDA6I>DC W |g+ BD9JA:H ;DG >CI:G;68: 7:IL:C v,1 6C9 :MI:GC6A >CEJI 9:K>8:H DG AD69Hf W w>:A:8IG>8 HIG:C<I= jmhh2 |CEJI ~D9JA: W ,G>CI:9 8>G8J>I 7D6G9 BDJCI +JIEJI ~D9JA: W xCK>GDCB:CI6A ;G>:C9AN EGD9J8I a.D{/ 8DBEA>6CIb y>A: *Dfr v-vhkhhihhnmpj


    Original
    AD69Hf 89D7C BC975FE 96I6H= 8DCI68I 8IGD68DJHI aadl vm 87 ad cibh MFH-P BC975 om2t PDF

    Contextual Info: HD74HC189 | PIN ARRANGEMENT W hile th e w rite-ena ble Ao | T U U L JU L J L J U U In fo rm a tio n to be stored in th e m e m o ry is w ritte n in to th e selected address lo c a tio n w hen th e c hip-select S and the w rite -e n a b le (R /W ) in p u ts are lo w .


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    HD74HC189 64-bit PDF

    g 6551

    Abstract: m6551 HM 1211 6551 HM-6551 HM-6551-5 HM-6551-9
    Contextual Info: H M -6 5 5 1 O HARRIS 2 5 6 x 4 CMOS RAM Features • • • • • • • • • • • • L o w S ta n d b y P o w e r . 5 0 ^ W M ax. L o w O p e ra tin g P o w e r . 2 0 m W /M H z M ax.


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    HM-6551 20mW/MHz 220ns HM-6551-5 HM-6551 HM-6551-8 g 6551 m6551 HM 1211 6551 HM-6551-5 HM-6551-9 PDF

    HD74LSoop

    Abstract: 1S2074 74LSOO HD74LS170 Hitachi Scans-001
    Contextual Info: # 4 - b y - 4 Register File with open collector outputs I Vcc I Dm TTJw* 1 — 1 I W rite n ] w, J S' 1" ' Wr' " l W Entble J R e td Q, | r Outputs J ¡FUNCTION TABLE W r it e In p u ts WB W a W o rd Gw Û II •BLOCK DIAGRAM IPIN ARRANGEMENT Of The HD74LS170 is organized as 4 words of 4 bits each and


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    HD74LS170 HD74LS170 QQ14CI14 DG-14 06max 20-IU8 OG-16 DG-24 HD74LSoop 1S2074 74LSOO Hitachi Scans-001 PDF

    RJ11 cable drawing

    Abstract: 6 Pin RJ11 Board Jack 6N3 t
    Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Filters > Product Feature Selector > Product Details RJ11-6N3-B Product Details


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    RJ11-6N3-B RJ11-6N3-B RJ11 cable drawing 6 Pin RJ11 Board Jack 6N3 t PDF

    2T931A

    Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
    Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K


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    MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A PDF

    7wu04

    Abstract: 7WU04F
    Contextual Info: TOSHIBA TC7WU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr7\A/IJfM F T r 7 W lin Z L F ll • m w w ■■ g m ^m m w w 3 INVERTER The TC7WU04 is a high speed C2MOS INVERTER fabricated with silicon gate C2M05 technology. It achives the high speed operation similar to equivalent


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    TC7WU04F/FU TC7WU04 C2M05 7wu04 7WU04F PDF

    6NI35

    Abstract: 6N1351
    Contextual Info: GaAÔAs IRED & PHOTO-IC 6N135,136 6N I35 U n it in mm D IG IT A L LO G IC IS O L A T IO N . LINE RECEIVER. P O W ER SUPPLY C O N T R O L S W IT C H IN G P O W ER SUPPLY 7 6 5 TR AN SISTO R INVERTER. The TOSHIBA 6N135 and 6N136 consists of a high em ittin g diode


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    6N135 6N136 TLP550 UL1577, E67349 11-10C1 6N135) 6NI35 6N1351 PDF

    til 702

    Contextual Info: HD74HCT563 HD74HCT573 # O ctal T ran sp a ren t L atch es w ith 3 -s ta te outputs When the latch enable (LE ) in p u t is high, the Q outputs o f J HD 74HCT563 w ill fo llo w the inversion o f the D inputs and the Q outputs o f HD74H CT573 w ill fo llo w the D inputs.


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    HD74HCT563 HD74HCT573 74HCT563 HD74H CT573 HD74HCT563 til 702 PDF

    Contextual Info: B U R R - B R O W N <i [ OPA124 ] Low Noise Precision Difet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES PRECISION PHOTODIODE PREAMP • LOW NOISE: 6nV/Vfiz 1 OkHz • LOW BIAS CURRENT: 1pA max MEDICAL EQUIPMENT • LOW OFFSET: 250|W max OPTOELECTRONICS


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    OPA124 120dB 100dB OPA124 17313LS PDF

    DN74LS190

    Abstract: MA161
    Contextual Info: LS TTL DN74LS Series D N 7 4 L S 1 9 DN74LS190 M o Synchronous BC D U p /D o w n Counters w ith U p /D o w n Mode Control • Description P-2 DN 74LS190 is a synchronous decade up/d o w n counter w ith u p/dow n con tro l inputs and set inputs. ■ Features


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    DN74LS DN74LS190 DN74LS190 25MHz 16-pin SO-16D) MA161 PDF

    ls406

    Contextual Info: LINEAR SYSTEMS LS-U401 - U406 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LO W DRIFT LO W NO ISE I V g s i -2^T I= 10PV/°C TYP. en= 6nV/ Hz @ 1 0Hz TYP. LO W P IN C H O FF V p= 2.5V TYP. A B S O L U T E M AXIM U M R A T IN G S N 9 T E 1


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    LS-U401 300mW 100Hz ls406 PDF

    6N62K

    Contextual Info: STF6N62K3, STI6N62K3 STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK Features Order codes TAB VDSS RDS on max. ID Pw 5.5 A 30 W 90 W 90 W 90 W 3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 620 V


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    STF6N62K3, STI6N62K3 STP6N62K3, STU6N62K3 O-220FP, O-220, STF6N62K3 STP6N62K3 6N62K PDF

    100 6n

    Abstract: 6N 136 n13e
    Contextual Info: 6N135, 6N136, HCPL4502 OPTOCOUPLERS/OPTOISOLATORS D2918, JULY 1986 —REVISED JULY 1989 • C om patible w ith T T L Inputs * H igh -S peed S w itch in g . . . 1 M b it/s T y p * B an d w id th . . . 2 M H z T y p • H igh C o m m o n -M o d e Transient Im m u n ity . . . 1 0 0 0 V //is T y p


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    6N135, 6N136, HCPL4502 D2918, ICPL4502 1CPL4502 100 6n 6N 136 n13e PDF

    Contextual Info: CRYSTAL CONTROLLED OSCILLATORS TIGHT TOLERANCE 14 PIN DIP HCMOS VCXO co n n o r W INFIELD FAX 6 3 0 B 5 1 - 5 0 4 0 w w w .co n w in .c o m H1DBV SPECIFICATIONS F re q u e n cy Range 1 25K H z to ±5ppm Frequency Vs Temperature C a lib ra tio n T o le ra n ce


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    PDF

    Contextual Info: HM-6551 O HARRIS 256 4 CMOS RAM Pinout Features • • • • • • • • • • • • X TOP VIEW L o w S ta n d b y P o w e r . 5 0 fiW M a x. L o w O p e r a tin g P o w e r . 2 0 m W /M H z M a x.


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    HM-6551 PDF

    Contextual Info: REVISIONS •W lIrtT IO H pwctown » M M WAI M tONATO BT a im i » w i r r cß o m q o m o u strm ^ am o o a rr u m O W JB .T a u N W o o w iB W fr, o a jco M o u sn u a to tw m a cm tnt u n to d u a tb a ll a m m t. no> rART. OtJKX , UM» »AU. MAMUMCTUKJNC AMD W tO -


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    018am PDF

    Contextual Info: Microwave Multi-Cap SLC’s Multi-Cap Series HOW TO ORDER GH B 5 5 A 6R8 K N 6 1 2 3 4 5 6 7 8 9 1 Type 2 Array Code: B = 2, C = 3, D = 4, E = 5, F = 6 3 Size Code: 2 = .020" W 3 = .030" W 5 = .050" W Y = .025" W 4 = .040" W S = Special 4 Working Voltage Code: 5 = 50WVDC, 1 = 100WVDC


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    50WVDC, 100WVDC 025x0 030x0 040x0 PDF

    stk 425 090

    Abstract: stk ic 5.1 channel amplifier 12 v 100w power amp diagram stk audio amplifier stk 070 circuit with PCB stk ic 5.1 circuit diagram STK 5 channel amp stk power amp 100w audio amplifier circuit using stk IC layout pcb stk 070 stk audio ic
    Contextual Info: Ordering number : EN4340A T hick Film Hybrid 1C STK400-050 No. 4340A AF Power Amplifier Split Power Supply (30 W + 30 W + 30 W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available w ith pin-co m p atib ility to perm it a single PCB to be


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    EN4340A STK400-050 stk 425 090 stk ic 5.1 channel amplifier 12 v 100w power amp diagram stk audio amplifier stk 070 circuit with PCB stk ic 5.1 circuit diagram STK 5 channel amp stk power amp 100w audio amplifier circuit using stk IC layout pcb stk 070 stk audio ic PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF