W 135 ZENER Search Results

lm 383 ic

Abstract: 1001-7R 1301-7R B3P5 TOKO AC-DC Converters NTC 50-11 resistance marking 5024B NTC 50-11 melcher LM 1000 melcher LM 1601
Contextual Info: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family

1740-7D

Abstract: LT 1740 Melcher LK 2000 Melcher LT 1740 kvp 13a m Melcher M 1000 AC-DC/DC-DC CONVERTER step down transformer 12-0-12 1301-7R Melcher melcher 1000
Contextual Info: AC-DC Converters >100 W 11 AC-DC Converters >100 W 11.1 Rugged Environment Output [W] 150 300 500 1000 3000 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page K K02 11 - 2 T T01 11 - 25 VSR various 11 - 55 Product

Contextual Info: AMERICAN POWER D E V IC E S 5TE D 0 737 135 00G0077 american SEM ICO N D U CTO R S 4T1 • A P D /-H -JlS 1N6267 - 1N6303 1N6267A - 1N6303A p o w e r d evices, inc. 1500 W silicon voltage transient suppressors FEATURES MAXIMUM RATINGS • 1500 W of peak pulse power

Melcher LT 1740

Abstract: 1601-7R 1000 watt ups transformer diagram MELCHER PSR 248 1001-7R 1301-7R transformer dash 2 b-5 step down transformer 12-0-12 LT 1740 2660-7R
Contextual Info: AC-DC Converters >100 W 11 AC-DC Converters >100 W 11.1 Rugged Environment Output [W] 150 300 500 1000 3000 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page K K02 11 - 2 T T01 11 - 25 VSR various 11 - 55 Product

Melcher M 1000 AC-DC/DC-DC CONVERTER

Abstract: LM 2000 melcher Melcher Melcher LK 2000 melcher LM 1000 Melcher family lm 1601 H1000 melcher H254 melcher 1000 Melcher family K
Contextual Info: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family

Contextual Info: 1307032 M/A-COM QuickMount Micro GPS Patch Antennas yu aco vi h. w R F & M ic ro w a v e P ro d u c ts QuickMount Micro GPS Patch Antennas with mounting options Model ANPC-128 - Passive Model ANPC-131 - Active Model ANPC-135 - Active Our QuickMount Micro GPS Patch Antennas are compact, right

ZENER R2M

Contextual Info: AVALANCHE ZENER DIODES WITH B I ILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) V rm Type No. IzSM W VZ (V) Ir V rm (A) Instantaneous Instantaneous <h A) m Current Max. Max. (V) Current RM25 40 50 3.0 60 to 70 5 20 1.0 135 to 180

DB-54003L-175

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1

LM 458

Abstract: LM 1011 temperature sensor lm 125 LM235 Thermocouple Type K material LM235-LM335 lm336 pin diagram LM33S LN4148 LM135
Contextual Info: THOMSON SEMICONDUCTORS LM135 LM235 LM335,A PRECISION TEM PERATURE SENSORS The LM 135, LM 235, LM 335 are precison temperature sensors w hich can be easily calibrated. They operate as a 2-term inal Zener and the breakdown vol­ tage is directly proportional to the absolute temperature at 10 m V /°K . The cir­

J2317

Abstract: J9001 DB-84008L-175 DB-84008L-950 EXCELDRC35C LQW18AN43NG00 PD84008L-E PD84008L J2802 TRANSISTOR 2586
Contextual Info: DB-84008L-175 Evaluation board using PD84008L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 15.7 ± 0.5 dB ■ Efficiency: 60 % - 64 % ■ Load mismatch: 10:1 all phases

J449

Abstract: AS030721-39N J657 korin 3214W-1-103E DB-84006L-175 EXCELDRC35C PD84006L-E transistor l54 J387
Contextual Info: DB-84006L-175 Evaluation board using PD84006L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 14.0 ± 0.8 dB ■ Efficiency: 59 % - 68 % ■ Load mismatch: 10:1 all phases

MC1351

Contextual Info: O RDERING INFORMATION Device M C 135 1 P Temperature Range Package 0°C to +75°C Plastic D IP W ID E B A N D F M - A M P L IF IE R ; L IM IT E R , D E T E C T O R , A N D A U D IO A M P L IF IE R T V S O U N D C IR C U IT M O N O L IT H IC S IL IC O N IN T E G R A T E D C IR C U IT

LM33S

Abstract: se 336 M335A lm 336
Contextual Info: Semiconductor LM135/LM235/LM335, LM135A/LM235A/LM335A Precision Temperature Sensors General Description The LM 135 series are precision, e asily-calibrated, integrated circuit tem perature sensors. O perating as a 2-term inal zener, the LM 135 has a breakdown voltage directly proportional to

UFT3005

Abstract: 1N1815A 1N1815-A JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A JAN1N3014B JANTX1N3014B
Contextual Info: Zener Regulator Diodes ZEN JANTXV1N3011B 1N1813 1N1813A 1N3012A 1N3012B JAN1N3012B JANTX1N3012B JANTXV1N3012B 1N3013A 1N3013B JAN1N3013B JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A 1N3014B JAN1N3014B JANTX1N3014B JANTXV1N3014B 1N1815 1N1815A 1N3015A

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

TNR9G471K

Abstract: TNR G Series TNR23G471K tnr15g621 TNR15G241K
Contextual Info: MARCON AMERICA CORP ESE D • 5763311 0000713 6 ■ METAL OXIDE VARISTORS T '-ll-JL S- TNR Marcon TN R Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

Contextual Info: ' '' i t s : ’ f 'MNR." Varistors. 1 * >" ^ ES VE. ¿Metal.OxideType * J'' X Ì . Varistors are voltage-dependent, non-linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed for transient suppression in electrical

gz zener

Abstract: 39A zener diode RZ33A 6AR6 GZ33AR GZ47A GZ27AR 34 GZ gz 77 diodes 415 39a
Contextual Info: y zener diodes diodes zener THOMSON-CSF Type» Vc min 10 W / Tease GZ 6A, GZ 8A, GZ 10A, GZ 12A, GZ 15A, GZ 18A, GZ 22A, GZ 27A, GZ 33A, GZ39A, GZ 47A, GZ 56A, GZ68A, GZ 82A, GZ 10B, GZ 12B, GZ 15B, GZ 18B, R (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R)

LM135

Abstract: LM335 LM135/A LM335A
Contextual Info: THOMSON SEMICONDUCTORS J LM135 J LM335,A PRECISION TEM PERATURE SENSORS The LM 135, LM335 are precision temperature sensors which can be easily cali brated. They operate as a 2-terminal Zener and the breakdown voltage is directlv proportional to the absolute temperature at 10 m V /°K . The circuit has a dyna

23G102k

Abstract: 15G121K 15g102k tnr g 180k 12G102K tnr 15g 471k varistor 152k
Contextual Info: METAL OXIDE VARISTORS TN R Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex­

15g471k

Abstract: 23G911K R23G 112K R23G tnr 15g 471k 12g 102k tnr 15g 681K 15g561k tnr g 180k 15g122k
Contextual Info: METAL OXIDE VARISTORS TNR M arco n T N R M etal O xide V aristo rs are v o ltag e d ep en d en t, sym m etrical resistors w h ich p erform in a m an n er sim ilar to b ack -to -b a ck zener d io d e s in circu it p rotective fu n ctio n s an d offer ad v an tag es in perfo rm an ce an d econom ics. W hen ex­

0240NR10D

Abstract: 1000NR-14D 0047ZR07D 0018ZR05D 0018ZR10D 0022ZR05D 0022ZR07D 0022ZR10D 0450NR20D 0024ZR05D
Contextual Info: Varistors are voltage-dependent, non linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed for transient suppression In electrical circuits. Transients can result from the sudden release of previously

1000NR-14D

Abstract: 1000NR14D 1000NR20D 0216NR20D 0022ZR07D 0450NR12D 0068ZR100 0047ZR07D 0018ZR05D 0018ZR07D
Contextual Info: Varistors are voltage-dependent, non-linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed ior transient suppression in electrical circuits. Transients can result from the sudden release ol previously