VTP9412 Search Results

s 9413

Abstract: VTP9412 VTP9413
Contextual Info: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear

VTP9412

Contextual Info: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes

Contextual Info: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes

Contextual Info: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes

vtp9412h

Contextual Info: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

VTP9412

Abstract: VTP9413
Contextual Info: SbE D • 3030^0^ OOOlQôM VTP Process Photodiodes TÔG IVCT V T P 9 4 1 2, 9413 T-41-51 E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) Small area planar silicon photodiode in a recessed ceramic package. Chip is

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

ID12

Abstract: VTP9412
Contextual Info: VT P 9 4 1 2 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceram ic package. Chip is coated w ith a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and

Contextual Info: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and