VTP3310LA Search Results

VTP3310LA Datasheets (3)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VTP3310LA		PerkinElmer Optoelectronics	VTP Process Photodiode	Original	PDF	19.34KB	1
VTP3310LA		EG&G Vactec	VTP Process Photodiodes	Scan	PDF	38.89KB	1
VTP3310LA		PerkinElmer Optoelectronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SILICON PHOTODIODES	Scan	PDF	93.97KB	1

VTP3310LA Price and Stock

Filter by Manufacturer

Excelitas Technologies Corporation


Excelitas Technologies Corporation VTP3310LAH Diode, Photo, 925Nm, 20°, T-1; No. Of Pins:2Pins; Diode Case Style:T-1 (3Mm); Wavelength Of Peak Sensitivity:925Nm; Angle Of Half Sensitivity ±:20°; Dark Current:35Na; Operating Temperature Min:-40°C; Operating Temperature Max:100°C Rohs Compliant: Yes \|Excelitas Tech VTP3310LAH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VTP3310LAH	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTP3310LA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH	PDF
VTP3310L Contextual Info: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LA VTP3310L	PDF
VTP3310LA Abstract: VTP331OLA VTP3310L Contextual Info: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm .0 3 7 (0 .9 4 ) .023 ÌO.Sfiì NOM. .1 6 0 (4 .0 6 ) .0 2 0 (0 .5 1 ) .2 0 5 (5 .2 1 ) M IN IM U M PRODUCT DESCRIPTION CASE 50A LO NGT-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) Small area planar silicon photodiode in	OCR Scan	VTP331OLA VTP3310LA VTP3310LA VTP331OLA VTP3310L	PDF
VTP3310LAH Abstract: VTP3310L Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH VTP3310LAH VTP3310L	PDF
VTP3310LA Abstract: VTP3310L Contextual Info: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LA VTP3310LA VTP3310L	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100	PDF
VTS3082 Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level	Original	2850K VTS3082 15K/1 VTS3085 2K/55K VTS3082 476 20k cap VTL5C3 980-2675 VTP1188S 980-0004 photoconductive cells VT935G vactrol	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF